NTMD4184PF Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2A, Schottky Barrier Diode Features •FETKYt Surface Mount Package Saves Board Space •Independent Pin-Out for MOSFET and Schottky Allowing for Design Flexibility •Low RDS(on) MOSFET and Low VF Schottky to Minimize Conduction Losses •Optimized Gate Charge to Minimize Switching Losses •This is a Pb-Free Device http://onsemi.com P-CHANNEL MOSFET V(BR)DSS RDS(on) Max 95 mW @ -10 V -30 V -4.0 A 165 mW @ -4.5 V Applications SCHOTTKY DIODE •Disk Drives •DC-DC Converters •Printers VR Max VF Max IF Max 20 V 0.58 V 2.2 A MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Value Unit Drain-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGS ±20 V ID -3.3 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 1.6 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID -2.3 A TA = 70°C Steady State G -2.6 TA = 70°C D PD 0.77 W Continuous Drain Current RqJA t < 10 s (Note 1) TA = 25°C ID -4.0 A Power Dissipation RqJA t < 10 s (Note 1) TA = 25°C TA = 70°C P-Channel MOSFET MARKING DIAGRAM & PIN ASSIGNMENT C C D D -3.2 2.31 W IDM -10 A TJ, TSTG -55 to +150 °C Source Current (Body Diode) IS -1.3 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C 4184PF AYWW G SOIC-8 CASE 751 STYLE 18 8 1 Operating Junction and Storage Temperature Schottky Diode 8 PD TA = 25°C, tp = 10 ms C -1.8 TA = 25°C Pulsed Drain Current A S Symbol Rating Power Dissipation RqJA (Note 2) ID Max 1 A A S G 4184PF = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, (Note 1) Steady State t < 10 s VRRM 20 V VR 20 V IF 2.2 A ORDERING INFORMATION Device NTMD4184PFR2G 3.2 Package Shipping† SOIC-8 2500/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 March, 2008 - Rev. 0 1 Publication Order Number: NTMD4184PF/D NTMD4184PF THERMAL RESISTANCE MAXIMUM RATINGS Parameter MOSFET & Schottky Symbol Max Junction-to-Ambient – Steady State (Note 1) RqJA 79 Junction-to-Ambient – t ≤10 s Steady State (Note 1) RqJA 54 Junction-to-FOOT (Drain) Equivalent to RqJC RqJF 50 Junction-to-Ambient – Steady State (Note 2) RqJA 163 Unit °C/W 1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA -30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 30 VGS = 0 V, VDS = -24 V mV/°C TJ = 25°C -1.0 TJ = 125°C -10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS -1.0 -3.0 4.4 VGS = -10 V ID = -3.0 A 70 95 VGS = -4.5 V ID = -1.5 A 120 165 VDS = -1.5 V, ID = -3.0 A V mV/°C 5.0 mW S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1.0 MHz, VDS = -10 V 280 360 80 110 CRSS 52 80 Total Gate Charge QG(TOT) 2.8 4.2 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge Total Gate Charge VGS = -4.5 V, VDS = -10 V, ID = -3.0 A QGD 0.4 pF nC 1.1 1.1 QG(TOT) VGS = -10 V, VDS = -10 V, ID = -3.0 A 5.8 8.8 td(ON) 7.2 15 tr 12 24 18 36 2.6 6.0 -0.8 -1.0 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(OFF) VGS = -10 V, VDS = -10 V, ID = -1.0 A, RG = 6.0 W tf ns DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Time ta tb VGS = 0 V ID = -1.3 A TJ = 25°C TJ = 125°C 0.7 12.8 VGS = 0 V, dIS/dt = 100 A/ms, IS = -1.3 A QRR 10 2 ns 2.8 7.4 http://onsemi.com V nC NTMD4184PF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit Typ Max Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Maximum Instantaneous Forward Voltage Test Conditions VF IF = 1.0 A IF = 2.0 A Maximum Instantaneous Reverse Current IR VR = 10 V VR = 20 V Min TJ = 25°C 0.43 0.50 TJ = 125°C 0.35 0.39 TJ = 25°C 0.5 0.58 TJ = 125°C 0.45 0.53 TJ = 25°C 0.001 0.02 TJ = 125°C 1.2 14 TJ = 25°C 0.004 0.05 TJ = 125°C 2.0 18 mA 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. TYPICAL CHARACTERISTICS 5.0 V VGS = 4.5 V TJ = 25°C 10 V 8 10 4.2 V VDS ≥ 10 V 4.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 3.8 V 6 3.6 V 3.4 V 4 3.2 V 3.0 V 2 8 6 4 2 2.6 V 0 2 4 6 8 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.30 ID = 3 A TJ = 25°C 0.25 0.20 0.15 0.10 0.05 2 TJ = -55°C 0 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 TJ = 25°C TJ = 125°C 2.8 V 4 6 8 10 0.25 TJ = 25°C 0.20 VGS = 4.5 V 0.15 0.10 VGS = 10 V 0.05 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage http://onsemi.com 3 9 NTMD4184PF TYPICAL CHARACTERISTICS 10,000 1.5 VGS = 0 V ID = 3 A VGS = 10 V 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.3 1.2 1.1 1.0 0.9 100 TJ = 125°C 10 -25 0 25 50 75 100 125 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage VGS, GATE-TO-SOURCE VOLTAGE (V) 350 300 Ciss 250 200 150 100 Coss 50 Crss VGS = 0 V 0 5 TJ, JUNCTION TEMPERATURE (°C) TJ = 25°C 0 0 150 400 C, CAPACITANCE (pF) TJ = 150°C 0.8 0.7 0.6 -50 5 10 15 20 10 QT VGS 8 6 Q1 4 Q2 ID = 3 A 2 TJ = 25°C 0 0 25 1 2 3 4 5 DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 6 3.0 100 tf td(off) tr 10 IS, SOURCE CURRENT (A) VDD = 15 V ID = 1.0 A VGS = 10 V t, TIME (ns) 1000 td(on) VGS = 0 V TJ = 25°C 2.5 2.0 1.5 1.0 0.5 0 1 1 10 0 100 0.2 0.4 0.6 0.8 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTMD4184PF TYPICAL CHARACTERISTICS 1000 R(t) (°C/W) 100 10 0.5 0.2 0.1 0.05 0.02 0.01 1 0.1 0.01 Single Pulse 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 PULSE TIME (sec) Figure 11. Thermal Response - RqJA at Steady State (min pad) R(t) (°C/W) 100 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) Figure 12. Thermal Response - RqJA at Steady State (1 inch sq pad) 100 TJ = 125°C 10 TJ = 85°C TJ = 25°C 1 TJ = -55°C 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 10 TJ = 125°C TJ = 25°C TJ = 85°C 1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage http://onsemi.com 5 NTMD4184PF IR, MAXIMUM REVERSE CURRENT (A) TYPICAL CHARACTERISTICS IR, REVERSE CURRENT (A) 100E-3 100E-3 10E-3 TJ = 125°C 1E-3 TJ = 85°C 100E-6 TJ = 125°C 10E-3 TJ = 85°C 1E-3 100E-6 10E-6 TJ = 25°C 1E-6 100E-9 TJ = 25°C 10E-6 1E-6 100E-9 0 10 20 0 10 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 15. Typical Reverse Current Figure 16. Maximum Reverse Current 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 0 5 10 15 VR, REVERSE VOLTAGE (V) Figure 17. Capacitance http://onsemi.com 6 20 25 20 NTMD4184PF PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -XA 8 5 S B 0.25 (0.010) M Y M 1 4 K -YG C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE -Z- 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY and Micro8 are registered trademarks of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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