SANYO 55GN01NA

55GN01NA
Ordering number : ENA1116
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
55GN01NA
UHF Wide-band Low-noise
Amplifier Applications
Features
•
•
High cutoff frequency : fT= 5.5GHz typ.
High gain
: ⏐S21e⏐2 =7dB typ (f=1GHz).
=13dB typ (f=400MHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
20
V
10
V
VEBO
IC
3
V
70
mA
Junction Temperature
PC
Tj
Storage Temperature
Tstg
400
mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
Conditions
ICBO
IEBO
VCB=10V, IE=0A
Emitter Cutoff Current
DC Current Gain
hFE
Gain-Bandwidth Product
VCE=5V, IC=10mA
VCE=5V, IC=20mA
Output Capacitance
fT
Cob
Reverse Transfer Capacitance
Cre
Ratings
min
typ
VEB=2V, IC=0A
100
3.5
0.1
μA
1
μA
180
5.5
VCB=10V, f=1MHz
1.2
VCB=10V, f=1MHz
0.8
Marking : ZD
Unit
max
GHz
1.4
pF
pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
42809AB MS IM TC-00001957 No. A1116-1/6
55GN01NA
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
2
min
Forward Transfer Gain
⏐S21e⏐ 1
2
⏐S21e⏐ 2
VCE=5V, IC=20mA, f=1GHz
VCE=5V, IC=20mA, f=400MHz
Noise Figure
NF
VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω
typ
Unit
max
5
7
10
13
dB
dB
1.9
dB
Package Dimensions
unit : mm (typ)
7522-003
5.0
4.0
5.0
4.0
14.0
0.6
2.0
0.45
0.5
0.45
0.44
1 2 3
1 : Base
2 : Emitter
3 : Collector
1.3
SANYO : NP
1.3
IC -- VCE
50
40
70
Collector Current, IC -- mA
Collector Current, IC -- mA
VCE=5V
A
0.30m
45
0.25mA
35
0.20mA
30
IC -- VBE
80
25
0.15mA
20
0.10mA
15
0.05mA
10
60
50
40
30
20
10
5
IB=0mA
0
0
1
2
3
4
5
6
7
8
Collector-to-Emitter Voltage, VCE -- V
9
10
IT06252
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT06253
No. A1116-2/6
55GN01NA
hFE -- IC
3
f T -- IC
10
VCE=5V
Gain-Bandwidth Product, f T -- GHz
2
DC Current Gain, hFE
VCE=5V
100
7
5
7 1.0
2
3
5
7
2
10
3
5
7 100
IT06254
Collector Current, IC -- mA
Reverse Transfer Capacitance, Cre -- pF
2
1.0
7
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Base Voltage, VCB -- V
2
3
5
2
10
3
5
7 100
IT07406
Cre -- VCB
3
2
1.0
7
2
3
5
7 1.0
2
3
5
7
2
10
Collector-to-Base Voltage, VCB -- V
IT07408
⏐S21e⏐2 -- IC
16
3
IT07409
VCE=5V
f=400MHz
14
2
VCE=3V
f=1GHz
Zo=50Ω
7
f=1MHz
5
0.1
5
NF -- IC
3.0
Noise Figure, NF -- dB
3
Forward Transfer Gain, ⏐S21e⏐ -- dB
Output Capacitance, Cob -- pF
3
2
2
5
f=1MHz
5
0.1
3
Collector Current, IC -- mA
Cob -- VCB
5
5
1.0
1.0
5
3
7
2.5
2.0
1.5
1.0
1.0
2
3
5
7
Collector Current, IC -- mA
10
IT05674
PC -- Ta
450
12
10
8
f=1GHz
6
4
2
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT07407
Collector Dissipation, PC -- mW
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07410
No. A1116-3/6
55GN01NA
S Parameters (Common emitter)
VCE=5V, IC=1mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.943
--21.54
3.196
157.89
0.049
75.41
0.976
--12.26
200
0.859
--42.64
3.033
137.45
0.089
62.59
0.918
--23.34
400
0.621
--84.31
2.581
101.05
0.141
42.68
0.765
--40.98
600
0.398
--128.72
2.188
70.15
0.163
34.48
0.643
--53.98
800
0.293
175.87
1.845
43.99
0.186
31.55
0.557
--67.68
1000
0.321
128.34
1.586
21.39
0.224
30.55
0.476
--85.66
1200
0.412
98.48
1.387
1.15
0.286
25.00
0.402
--111.30
1400
0.506
79.14
1.203
--17.54
0.360
14.93
0.338
--149.61
1600
0.608
63.42
1.041
--34.64
0.428
1.54
0.338
162.40
1800
0.682
49.93
0.880
--48.35
0.479
--13.03
0.409
121.17
2000
0.730
37.12
0.746
--59.47
0.510
--27.54
0.507
91.78
VCE=5V, IC=3mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.804
--32.40
8.238
142.84
0.045
73.04
0.893
--19.66
200
0.585
--55.65
6.453
116.32
0.073
62.58
0.746
--30.06
400
0.290
--84.97
4.082
82.70
0.123
54.56
0.584
--41.23
600
0.130
--115.59
2.993
59.77
0.168
48.90
0.499
--51.80
800
0.085
161.69
2.401
40.03
0.223
40.68
0.418
--66.00
1000
0.175
112.07
2.029
21.35
0.280
31.13
0.324
--84.62
1200
0.293
91.78
1.768
3.22
0.336
20.03
0.227
--112.98
1400
0.412
77.04
1.538
--14.06
0.389
7.76
0.157
--164.54
1600
0.531
63.46
1.337
--30.59
0.433
--5.27
0.199
134.30
1800
0.621
50.74
1.147
--45.02
0.466
--17.84
0.303
100.00
2000
0.685
38.34
0.990
--57.83
0.491
--30.60
0.411
79.31
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
100
0.682
--38.10
11.302
132.99
0.040
71.69
0.817
--22.99
200
0.442
--56.42
7.763
106.10
0.068
65.81
0.660
--30.32
400
0.208
--71.35
4.460
77.25
0.121
59.57
0.531
--39.30
600
0.088
--86.87
3.190
57.12
0.176
52.06
0.459
--50.11
800
0.034
149.18
2.542
39.04
0.235
42.45
0.378
--65.34
1000
0.140
104.71
2.150
21.30
0.295
30.94
0.279
--84.88
1200
0.266
89.28
1.863
3.90
0.350
18.79
0.177
--116.24
1400
0.390
75.83
1.622
--12.95
0.401
5.97
0.121
179.23
1600
0.510
63.13
1.413
--28.93
0.438
--6.84
0.192
118.31
1800
0.602
50.55
1.219
--43.09
0.467
--19.34
0.299
90.37
2000
0.668
38.16
1.055
--55.85
0.490
--31.84
0.403
72.89
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.485
--41.64
15.144
118.22
0.036
72.52
0.696
--25.07
200
0.302
--47.04
8.855
95.57
0.063
71.31
0.571
--27.92
400
0.173
--47.23
4.759
72.34
0.123
63.65
0.483
--36.07
600
0.093
--47.78
3.367
54.88
0.184
54.28
0.422
--48.07
800
0.016
30.84
2.673
38.26
0.246
42.91
0.342
--64.25
1000
0.113
95.22
2.252
21.35
0.309
30.98
0.237
--85.29
1200
0.241
86.37
1.949
4.47
0.363
17.56
0.132
--122.60
1400
0.369
74.46
1.689
--11.79
0.410
4.53
0.105
153.44
1600
0.493
62.03
1.477
--27.39
0.444
--8.58
0.202
103.83
1800
0.588
50.01
1.273
--40.99
0.468
--21.13
0.313
81.36
2000
0.656
37.87
1.111
--53.67
0.489
--33.27
0.409
66.66
No. A1116-4/6
55GN01NA
S Parameters (Common emitter)
VCE=5V, IC=15mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
100
0.393
--39.40
16.513
200
0.262
--38.91
9.160
111.47
0.034
76.73
0.638
--24.75
91.74
0.063
73.11
0.540
--25.92
400
0.173
--37.43
600
0.104
--38.16
4.855
70.51
0.125
65.36
0.468
--34.48
3.423
54.12
0.187
55.16
0.409
--47.14
⏐S22⏐
∠S22
800
0.028
7.07
2.718
37.90
0.252
43.45
0.329
--63.84
1000
0.106
91.07
2.289
21.31
0.314
30.76
0.221
--85.01
1200
0.234
85.64
1.977
4.65
0.369
17.31
0.117
--126.09
1400
0.364
74.15
1.712
--11.33
0.414
3.76
0.106
143.44
1600
0.488
61.92
1.493
--26.87
0.447
--9.20
0.213
99.23
1800
0.582
49.99
1.298
--40.45
0.470
--21.60
0.321
78.78
2000
0.651
37.88
1.128
--52.86
0.488
--33.58
0.415
64.58
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.346
--36.01
17.139
107.73
0.033
76.49
0.608
--23.92
200
0.246
--33.91
9.298
89.56
0.063
75.27
0.526
--24.72
400
0.173
--32.88
4.887
69.69
0.125
66.04
0.463
--33.79
600
0.108
--33.77
3.442
53.42
0.189
55.58
0.403
--46.59
800
0.034
7.28
2.732
37.56
0.255
43.56
0.321
--63.41
1000
0.104
89.49
2.301
21.18
0.315
30.73
0.213
--85.68
1200
0.232
85.18
1.991
4.67
0.371
17.24
0.110
--127.83
1400
0.363
73.90
1.721
--11.37
0.413
3.77
0.107
139.24
1600
0.486
61.86
1.504
--26.71
0.447
--9.38
0.216
97.22
1800
0.582
49.85
1.298
--40.20
0.469
--21.77
0.324
77.62
2000
0.652
37.81
1.132
--52.56
0.488
--33.82
0.417
63.99
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.293
--31.14
17.643
103.73
0.033
80.19
0.576
--22.37
200
0.228
--27.21
9.367
87.38
0.063
75.47
0.511
--23.14
400
0.169
--27.83
4.896
68.61
0.125
66.51
0.455
--32.68
600
0.107
--29.09
3.448
52.73
0.190
55.90
0.397
--45.90
--62.93
800
0.039
15.22
2.739
36.98
0.255
43.60
0.316
1000
0.110
88.31
2.302
20.77
0.316
30.46
0.206
--85.04
1200
0.238
84.51
1.989
4.29
0.371
17.10
0.102
--127.75
1400
0.367
73.61
1.719
--11.62
0.415
3.59
0.106
134.87
1600
0.491
61.74
1.503
--26.98
0.448
--9.46
0.219
95.38
1800
0.584
49.63
1.295
--40.37
0.470
--21.95
0.327
76.66
2000
0.654
37.73
1.133
--52.81
0.488
--33.87
0.418
62.92
VCE=5V, IC=50mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.234
--26.34
17.554
100.28
0.033
79.67
0.552
--20.20
200
0.190
--22.28
9.191
85.28
0.063
77.35
0.504
--21.25
400
0.141
--22.30
4.777
67.06
0.126
66.81
0.454
--31.75
600
0.085
--19.60
3.367
51.37
0.189
55.97
0.397
--45.02
800
0.045
52.54
2.670
35.54
0.255
43.62
0.315
--62.21
1000
0.136
89.35
2.250
19.09
0.317
30.77
0.206
--83.77
1200
0.261
83.49
1.943
2.65
0.371
17.07
0.101
--126.95
1400
0.390
72.58
1.678
--13.25
0.413
3.62
0.102
135.16
1600
0.510
60.71
1.460
--28.69
0.448
--9.60
0.217
95.69
1800
0.600
48.78
1.265
--42.00
0.469
--21.99
0.323
76.16
2000
0.667
37.06
1.104
--54.45
0.489
--34.03
0.415
63.17
No. A1116-5/6
55GN01NA
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of April, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1116-6/6