2SC5231A Ordering number : ENA1077 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5231A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ (f=1GHz). High gain : ⏐S21e⏐2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 20 V Collector-to-Emitter Voltage VCBO VCEO 10 V Emitter-to-Base Voltage VEBO 2 V 70 mA Collector Dissipation IC PC 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current IEBO hFE VEB=1V, IC=0A 10 μA DC Current Gain VCE=5V, IC=20mA 60* 270* Continued on next page. * : The 2SC5231A is classified by 20mA hFE as follows : Marking C7 C8 C9 Rank 7 8 9 hFE 60 to 120 90 to 180 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001355 No. A1077-1/6 2SC5231A Continued from preceding page. Parameter Symbol Gain-Bandwidth Product Output Capacitance fT Cob VCE=5V, IC=20mA VCB=10V, f=1MHz Reverse Transfer Capacitance Cre VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz 2 ⏐S21e⏐ 1 2 ⏐S21e⏐ 2 Forward Transfer Gain Noise Figure Ratings Conditions min typ 5 7 GHz 0.7 9 VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz NF Unit max 1.2 pF 0.45 pF 12 dB 8.5 dB 1.0 1.8 dB Package Dimensions unit : mm (typ) 7027-002 1.6 0.8 0.4 1.6 0.5 0.5 0.3 0.2 0.4 1 2 0 to 0.1 0.75 0.6 0.1 3 1 : Base 2 : Emitter 3 : Collector 0.1 MIN SANYO : SMCP hFE -- IC 3 VCE=5V Gain-Bandwidth Product, fT -- GHz DC Current Gain, hFE 2 100 7 5 3 2 10 10 7 5 3 2 1.0 7 7 5 5 3 5 3 2 7 1.0 5 7 10 2 5 3 Collector Current, IC -- mA 7 100 2 ITR07968 7 1.0 2 3 5 Reverse Transfer Capacitance, Cre -- pF 2 1.0 7 5 3 2 0.1 7 5 2 10 3 5 7 100 2 ITR07964 Cre -- VCB 3 f=1MHz 7 Collector Current, IC -- mA Cob -- VCB 3 Output Capacitance, Cre -- pF fT -- IC 2 VCE=5V f=1MHz 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 ITR07965 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 ITR07966 No. A1077-2/6 2SC5231A NF -- IC Noise Figure, NF -- dB 8 6 4 2 12 10 8 6 4 2 0 5 2 7 1.0 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 2 ITR07963 PC -- Ta 120 Collector Dissipation, PC -- mW f=1GHz V CE = 5V V CE = 2V VCE=5V f=1GHz 10 0 3 ⏐S21e⏐2 -- IC 14 Forward Transfer Gain,⏐S21e⏐2 -- dB 12 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR07967 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR07969 No. A1077-3/6 2SC5231A S Parameters S11e f=100MHz, f=200MHz to 2000MHz(200MHz Step) S21e f=100MHz, f=200MHz to 2000MHz(200MHz Step) 90° j50 j25 0.1GHz j100 j150 j10 V CE=5V I C=7mA 150° j200 j250 0.1GHz 10 25 50 100 150 250 ±180° VCE=5V IC=20mA --j10 VCE=2V IC=3mA V =5 0.1GHz V CE=7mA --j250 --j200 0.1GHz I C GHz 1 . 0 --j150 5 10 15 20 25 0 --30° --60° --120° --90° ITR07970 S12e f=100MHz, f=200MHz to 2000MHz(200MHz Step) ITR07971 S22e f=100MHz, f=200MHz to 2000MHz(200MHz Step) 90° j50 60° VCE=5V 2.0GHz IC=7mA VCE=5V 2.0GHz IC=20mA 2.0GHz j25 j200 j250 j10 100 0 10 --j10 --30° --150° j100 j150 30° 0.1GHz VCE=2V IC=3mA 0.1GHz 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 ±180° 2.0GHz 2.0GHz --150° --j50 150° 30° --j100 --j25 120° VCE=5V IC=20mA V =2 E A V C =3m I C z 2.0GHz GH 0.1 2.0GHz 2.0GHz 2.0GHz 0 60° 120° --j25 25 VCE=5V 150 250 IC=20mA 0.1GHz VCE=5V 2.0GHz IC=7mA GHz 2.0GHz 0.1 --j250 2.0GHz z 0.1GH --j200 VCE=2V --j150 IC=3mA --j100 50 --60° --120° --90° ITR07972 --j50 ITR07973 No. A1077-4/6 2SC5231A S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.786 --40.7 17.507 151.3 0.028 70.1 0.898 --20.4 200 0.677 --72.4 13.998 131.4 0.046 58.0 0.739 --33.4 400 0.546 --112.7 9.061 108.6 0.064 49.6 0.525 --43.7 600 0.492 --135.2 6.442 96.1 0.076 49.3 0.423 --46.7 800 0.473 --150.0 5.005 87.3 0.087 50.8 0.374 --44.4 1000 0.465 --160.0 4.073 80.4 0.099 52.6 0.346 --49.7 1200 0.457 --169.5 3.449 74.0 0.111 54.0 0.332 --51.6 1400 0.451 --176.2 2.989 68.6 0.124 55.2 0.321 --54.1 1600 0.449 177.8 2.658 63.8 0.138 56.6 0.319 --56.2 1800 0.454 172.5 2.378 58.4 0.151 56.7 0.313 --60.0 2000 0.460 167.1 2.154 54.0 0.166 56.7 0.311 --63.2 ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 --32.9 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) ⏐S11⏐ 100 0.601 --65.8 28.967 137.1 0.023 64.1 0.757 200 0.497 --103.7 19.309 116.6 0.035 57.0 0.534 --50.3 400 0.435 --139.6 10.891 98.6 0.050 58.7 0.345 --50.3 600 0.419 --156.6 7.461 89.3 0.065 61.3 0.280 --50.7 800 0.414 --166.6 5.695 82.5 0.081 63.1 0.251 --51.3 1000 0.413 --174.0 4.613 77.0 0.098 63.8 0.235 --52.9 1200 0.413 178.6 3.870 71.8 0.114 63.9 0.226 --55.1 1400 0.411 173.8 3.345 66.9 0.131 63.6 0.221 --57.7 1600 0.413 169.6 2.960 62.7 0.148 63.2 0.220 --60.2 1800 0.416 165.1 2.655 58.0 0.165 61.8 0.219 --64.8 2000 0.422 160.3 2.406 54.0 0.182 60.6 0.218 --68.3 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.888 --30.2 9.280 158.6 0.038 73.6 0.949 --15.1 200 0.815 --56.4 8.218 141.3 0.067 60.5 0.849 --26.9 400 0.690 --96.0 6.074 116.7 0.098 45.1 0.657 --41.1 600 0.616 --120.7 4.517 101.4 0.112 38.4 0.539 --47.6 800 0.584 --138.0 3.610 90.4 0.120 35.8 0.475 --51.2 1000 0.566 --150.7 2.995 81.9 0.125 35.7 0.434 --54.5 1200 0.555 --161.2 2.540 74.2 0.131 36.5 0.410 --57.5 1400 0.546 --169.3 2.213 67.5 0.137 38.4 0.393 --60.7 1600 0.541 --176.4 1.982 62.0 0.143 40.7 0.391 --64.0 1800 0.545 177.1 1.774 55.9 0.152 42.5 0.382 --67.8 2000 0.547 170.9 1.614 50.9 0.163 44.7 0.381 --72.1 No. A1077-5/6 2SC5231A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A1077-6/6