SANYO ENA1109

15GN03SA
Ordering number : ENA1109
SANYO Semiconductors
DATA SHEET
15GN03SA
NPN Epitaxial Planar Silicon Transistor
VHF High-frequency Amplifier Applications
Applications
•
VHF, RF, MIXER, OSC, IF amplifier.
Features
•
•
•
High cut-off frequency : fT=1.5GHz typ.
High gain
: ⏐S21e⏐2=13dB typ (f=0.4GHz).
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
20
V
10
V
VEBO
IC
3
V
70
mA
Junction Temperature
PC
Tj
Storage Temperature
Tstg
100
mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
Conditions
ICBO
IEBO
VCB=10V, IE=0A
Emitter Cutoff Current
DC Current Gain
hFE
Gain-Bandwidth Product
fT
VCE=5V, IC=10mA
VCE=5V, IC=20mA
Ratings
min
typ
VEB=2V, IC=0A
Marking : ZC
100
1.0
Unit
max
0.1
μA
1
μA
180
1.5
GHz
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O2908AB MS IM TC-00001671 No. A1109-1/6
15GN03SA
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Forward Transfer Gain
2
⏐S21e⏐
NF
VCE=5V, IC=20mA, f=0.4GHz
VCE=3V, IC=2mA, f=0.4GHz
Noise Figure
typ
Unit
max
0.9
1.2
pF
0.6
10
pF
13
dB
1.6
dB
Package Dimensions
unit : mm (typ)
7027-002
1.6
0.8
0.4
0.3
1
2
0.1
3
0 to 0.1
0.75
0.6
1.6
0.5 0.5
0.2
0.4
1 : Base
2 : Emitter
3 : Collector
0.1 MIN
SANYO : SMCP
IC -- VCE
100
VCE=5V
0.8mA
0.7mA
80
70
Collector Current, IC -- mA
90
Collector Current, IC -- mA
IC -- VBE
80
0.6mA
70
0.5mA
60
0.4mA
50
0.3mA
40
30
0.2mA
20
0.1mA
60
50
40
30
20
10
10
IB=0mA
0
0
2
4
6
8
0
0
10
Collector-to-Emitter Voltage, VCE -- V
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
3
0.2
IT08123
f T -- IC
3
VCE=5V
Gain-Bandwidth Product, f T -- GHz
VCE=5V
DC Current Gain, hFE
2
100
7
5
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7
100
IT08125
1.2
IT08124
2
1.0
7
5
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT08126
No. A1109-2/6
15GN03SA
Cob -- VCB
3
Reverse Transfer Capacitance, Cre -- pF
Output Capacitance, Cob -- pF
f=1MHz
2
1.0
7
5
0.1
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Base Voltage, VCB -- V
3
Forward Transfer Gain, ⏐S21e⏐ -- dB
2
Noise Figure, NF -- dB
5
50Ω
ZS=
pt
so
=Z
ZS
1.0
3
5
7
1.0
2
3
5
7
2
10
Collector Current, IC -- mA
Collector Dissipation, PC -- mW
3
5
IT08130
PC -- Ta
120
1.0
7
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Base Voltage, VCB -- V
⏐S21e⏐2 -- I
3
5
IT08128
C
14
7
2
2
IT08127
VCE=3V
f=400MHz
3
f=1MHz
5
0.1
5
NF -- IC
10
Cre -- VCB
3
VCE=5V
f=400MHz
12
10
8
6
4
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT08129
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT08131
No. A1109-3/6
15GN03SA
S Parameters (Common emitter)
VCE=5V, IC=1mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.943
--36.97
3.273
155.15
0.043
69.08
0.967
--8.53
200
0.884
--67.33
2.788
135.32
0.072
53.66
0.912
--15.10
300
0.835
--90.72
2.345
119.87
0.089
42.67
0.863
--19.22
400
0.796
--108.84
1.985
108.09
0.094
34.96
0.826
--22.13
500
0.773
--121.99
1.715
98.54
0.094
32.18
0.808
--24.68
600
0.757
--133.06
1.495
90.77
0.091
29.52
0.796
--27.45
700
0.747
--141.92
1.326
84.15
0.087
29.95
0.790
--30.22
800
0.742
--148.93
1.204
78.39
0.081
32.55
0.790
--33.18
900
0.736
--155.29
1.094
73.18
0.075
38.42
0.795
--35.94
1000
0.732
--160.69
1.006
69.03
0.072
47.05
0.793
--38.82
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
--13.98
VCE=5V, IC=3mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
100
0.840
--62.35
7.872
140.90
0.036
59.22
0.884
200
0.742
--101.75
5.680
117.87
0.051
44.52
0.776
--19.10
300
0.694
--124.66
4.222
104.25
0.057
40.79
0.722
--20.98
400
0.674
--139.18
3.324
95.32
0.059
40.26
0.695
--22.44
500
0.661
--149.13
2.745
88.33
0.059
45.31
0.686
--24.35
600
0.657
--156.52
2.329
82.52
0.060
50.45
0.682
--26.73
700
0.656
--162.31
2.030
77.58
0.063
57.99
0.681
--29.15
800
0.654
--167.20
1.808
73.11
0.068
63.76
0.684
--32.05
900
0.654
--171.42
1.632
68.95
0.073
72.04
0.689
--34.87
1000
0.656
--174.93
1.490
65.50
0.082
78.28
0.693
--37.73
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.764
--78.80
10.674
132.18
0.032
53.42
0.824
--16.44
200
0.675
--118.13
6.892
110.39
0.043
45.09
0.711
--19.51
300
0.643
--138.42
4.905
98.72
0.046
48.08
0.661
--20.42
400
0.633
--150.22
3.806
90.79
0.049
50.31
0.645
--21.59
500
0.627
--157.84
3.112
84.79
0.052
56.84
0.640
--23.43
600
0.627
--164.10
2.626
79.63
0.057
62.40
0.640
--25.81
700
0.626
--168.63
2.280
75.35
0.062
68.40
0.639
--28.44
800
0.629
--172.39
2.025
71.19
0.070
74.50
0.643
--31.20
900
0.630
--175.77
1.824
67.34
0.077
78.67
0.650
--34.10
1000
0.632
--178.89
1.663
64.07
0.090
83.70
0.655
--36.92
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.660
--103.13
14.230
120.64
0.024
49.45
0.728
--18.47
200
0.610
--137.53
8.234
102.03
0.034
50.63
0.626
--18.73
300
0.596
--152.55
5.660
92.68
0.037
56.96
0.597
--19.00
400
0.596
--161.17
4.324
86.37
0.043
63.29
0.586
--20.07
500
0.596
--166.66
3.511
81.12
0.050
68.02
0.587
--21.96
600
0.597
--171.07
2.958
76.64
0.057
73.05
0.590
--24.55
700
0.602
--174.45
2.559
72.58
0.066
77.96
0.591
--27.10
800
0.605
--177.26
2.267
68.82
0.077
80.92
0.596
--29.89
900
0.609
--179.81
2.032
65.06
0.086
84.59
0.604
--32.87
1000
0.611
177.85
1.855
61.96
0.098
86.94
0.610
--35.66
No. A1109-4/6
15GN03SA
S Parameters (Common emitter)
VCE=5V, IC=15mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.614
--115.86
15.733
115.13
0.023
51.64
0.676
--18.67
200
0.587
--145.92
8.727
98.59
0.027
55.81
0.591
--17.74
300
0.580
--158.32
5.933
90.16
0.035
64.46
0.569
--17.98
400
0.582
--165.43
4.534
84.32
0.042
67.60
0.560
--19.12
500
0.586
--169.89
3.666
79.39
0.050
73.83
0.563
--21.07
600
0.589
--173.59
3.082
74.95
0.060
77.42
0.566
--23.60
700
0.594
--176.43
2.666
71.13
0.070
81.51
0.570
--26.22
800
0.599
--178.95
2.356
67.32
0.079
83.27
0.577
--29.13
900
0.604
178.83
2.116
63.75
0.089
86.12
0.584
--32.05
1000
0.608
176.67
1.926
60.55
0.100
87.51
0.590
--34.85
⏐S12⏐
∠S12
⏐S22⏐
∠S22
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
100
0.590
--123.88
16.491
111.84
0.020
52.74
0.645
--18.38
200
0.576
--150.93
8.952
96.58
0.026
58.67
0.573
--17.01
300
0.575
--161.70
6.065
88.73
0.034
65.27
0.553
--17.43
400
0.577
--167.82
4.616
82.83
0.043
69.85
0.547
--18.44
500
0.581
--171.66
3.726
78.17
0.051
74.84
0.550
--20.51
600
0.587
--174.81
3.132
73.88
0.061
80.30
0.556
--22.94
700
0.592
--177.52
2.703
69.83
0.070
81.90
0.559
--25.72
800
0.596
--179.80
2.389
66.21
0.081
84.16
0.566
--28.69
900
0.604
178.21
2.144
62.50
0.091
86.52
0.576
--31.45
1000
0.608
176.32
1.946
59.43
0.103
87.71
0.581
--34.28
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.572
--133.60
16.914
108.03
0.018
53.38
0.612
--17.49
200
0.570
--156.29
8.987
94.10
0.025
60.38
0.553
--15.82
300
0.573
--165.13
6.063
86.71
0.034
67.36
0.539
--16.11
400
0.581
--170.15
4.598
81.02
0.043
74.29
0.538
--17.30
500
0.586
--173.46
3.714
76.38
0.051
78.10
0.541
--19.51
600
0.592
--176.41
3.102
71.91
0.061
80.37
0.546
--22.19
700
0.597
--178.61
2.685
68.04
0.071
84.52
0.552
--24.92
800
0.605
179.29
2.363
64.13
0.083
83.99
0.560
--28.08
900
0.612
177.37
2.117
60.46
0.093
86.96
0.571
--30.99
1000
0.618
175.30
1.919
57.30
0.105
89.37
0.579
--33.87
VCE=5V, IC=50mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.587
--145.69
15.447
103.29
0.015
56.49
0.581
--15.11
200
0.598
--163.07
8.069
90.62
0.024
64.68
0.545
--14.00
300
0.605
--169.75
5.391
83.37
0.034
72.91
0.536
--14.90
400
0.613
--173.58
4.075
77.64
0.041
77.20
0.536
--16.65
500
0.621
--176.33
3.277
72.72
0.051
82.02
0.542
--19.12
600
0.628
--178.89
2.735
68.14
0.060
83.52
0.551
--22.03
700
0.640
178.96
2.338
64.06
0.071
85.56
0.556
--25.23
800
0.649
177.02
2.065
60.00
0.083
88.30
0.566
--28.52
900
0.655
175.07
1.839
56.23
0.094
90.06
0.577
--31.54
1000
0.663
172.97
1.661
52.87
0.107
91.44
0.587
--35.17
No. A1109-5/6
15GN03SA
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1109-6/6