TIG052TS Ordering number : ENA1258 SANYO Semiconductors DATA SHEET TIG052TS N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGES ±8 V Collector Current (Pulse) Channel Temperature ICP dVCE / dt Tch Storage Temperature Tstg Maximum Collector-to-Emitter dv / dt PW≤1ms PW≤500μs, duty cycle≤0.5%, CM=400μF, VGE=2.5V VCE≤320V, starting Tch=25°C V 150 A 400 V / μs 150 °C --40 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=±6V, VCE=0V Marking : G052 Ratings min typ max 400 Unit V 10 μA ±10 μA Continued on next page. * : Concerning dv/dt (slope of Collector Voltage at the time of Turn-OFF), dv/dt>400v/μs will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 80608PJ TI IM TC-00001524 No. A1258-1/5 TIG052TS Continued from preceding page. Parameter Symbol Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Ratings Conditions min VCE=10V, IC=1mA IC=150A, VGE=2.5V VCE=10V, f=1MHz typ 0.4 Package Dimensions 1.0 3.7 VCE=10V, f=1MHz VCE=10V, f=1MHz Unit max 5.5 V V 3800 pF 58 pF 47 pF Electrical Connection unit : mm (typ) 7006A-007 0.95 8 3.0 7 6 5 0.125 5 1 4 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate 1.0 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate 0.05 6.4 4.5 0.5 8 SANYO : TSSOP8 0.95 0.25 0.425 0.65 1 2 3 4 Top view Fig.1 Large Current R Load Switching Circuit RL + CM=400μF VCC=320V RG TIG052TS 2.5V 0V 100kΩ Note1. Gate Series Resistance RG≥82Ω is recommended for prolection purpose at the time of turn OFF. However, if dv / dt≤400V / μs is satisfied at customer’s actual set evaluation, RG<82Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off. No. A1258-2/5 TIG052TS 180 140 120 1.8V 100 80 60 120 100 80 60 20 20 0 1.0 2.0 3.0 4.0 5.0 Collector-to-Emitter Voltage, VCE -- V 6.0 0 0.5 Collector-to-Emitter Voltage, VCE -- V 5 4 IC=150A 2 130A 100A 1.5 2.0 2.5 3.0 3.5 IT13813 VCE -- VGE 6 Tc=--25°C 3 1.0 Gate-to-Emitter Voltage, VGE -- V IT13812 VCE -- VGE 6 Collector-to-Emitter Voltage, VCE -- V 140 40 0 Tc=25°C 5 4 IC=150A 3 130A 100A 2 1 1 0 1 2 3 4 5 Gate-to-Emitter Voltage, VGE -- V 0 6 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC=150A 3 130A 100A 1 2 3 4 Gate-to-Emitter Voltage, VGE -- V 6 IT13815 0A 15 I C= 4 130A 3 100A 2 --25 0 25 50 Switching Time, SW Time -- ns 0.4 0.3 0.2 125 150 IT13817 Circuit: refer to Fig.1 VGE=2.5V, VCC=320V, RG=82Ω, CM=400μF, PW=50μs 3 0.7 0.5 100 SW Time -- ICP 5 0.6 75 Case Temperature, Tc -- °C IT13816 VGE(off) -- Tc 0.8 5 5 1 --50 6 5 4 VGE=2.5V 4 1 3 VCE(sat) -- Tc 6 5 2 2 Gate-to-Emitter Voltage, VGE -- V Tc=75°C 0 1 IT13814 VCE -- VGE 6 Collector-to-Emitter Voltage, VCE -- V 160 40 0 Gate-to-Emitter Cutoff Voltage, VGE(off) -- V --2 5°C 25 °C 2.5V 3.0 Tc = 160 V VCE=5V Collector Current, IC -- A Collector Current, IC -- A 180 IC -- VGE 200 V GE =4 .0V Tc=25°C 75 °C IC -- VCE 200 tf 2 td (off) 1000 7 tr 5 3 2 td(on) 0.1 100 0 --50 7 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT13818 2 3 5 7 2 100 Collector Current (Pulse), ICP -- A 3 IT13819 No. A1258-3/5 TIG052TS SW Time -- RG 3 tf 5 tr 3 2 n) t d(o 100 7 Circuit: refer to Fig.1 VGE=2.5V, VCC=320V, ICP=150A, CM=400μF, PW=50μs 5 3 2 7 2 10 3 5 7 100 Gate Series Resistance, RG -- Ω 2 600 100 80 100 120 Gate Series Resistance, RG -- Ω Coes Cres 0 2 4 140 160 IT13822 6 8 10 12 14 16 18 Collector-to-Emitter Voltage, VCE -- V 160 200 60 100 7 5 3 300 40 2 IT13820 400 20 3 2 500 0 0 1000 7 5 10 Circuit: refer to Fig.1 VGE=2.5V, VCC=320V, ICP=150A, CM=400μF, PW=50μs 700 2 3 Turn OFF dv / dt -- RG 800 Turn OFF, dv / dt -- V / μs Cies, Coes, Cres -- pF 7 f=1MHz Cies 3 t d(off) Collector Current (Pulse), ICP -- A Switching Time, SW Time -- ns 2 1000 Cies, Coes, Cres -- VCE 10000 7 5 140 20 IT13821 ICP -- VGE VCM=320V CM=400μF Tc≤70°C 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 Gate-to-Emitter Voltage, VGE -- V 8 IT13847 CM -- ICP 450 Maximum Capacitor, CM -- μF 400 350 300 250 200 150 100 VGE=2.5V VCM=320V Tc≤70°C 50 0 0 20 40 60 80 100 120 Collector Current (Pulse), ICP -- A 140 160 IT13824 No. A1258-4/5 TIG052TS Note : TIG052TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2008. Specifications and information herein are subject to change without notice. PS No. A1258-5/5