SANYO 2SD1710C

2SD1710C
Ordering number : EN7200
SANYO Semiconductors
DATA SHEET
2SD1710C
NPN Triple Diffused Planar Silicon Transistor
500V / 7A Switching Regulator Applications
Features
•
•
•
•
•
High breakdown voltage, high reliability.
Fast switching speed.
Wide ASO.
Adoption of MBIT process.
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
900
V
Collector-to-Emitter Voltage
VCBO
VCEO
500
V
Emitter-to-Base Voltage
VEBO
7
V
IC
7
A
Collector Current
Collector Current (Pulse)
ICP
Base Current
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
PW≤300μs, duty cycle≤10%
Tc=25°C
14
A
3
A
3
W
45
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
Collector Cutoff Current
ICBO
VCB=500V, IE=0A
10
μA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
10
μA
Continued on next page.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20608KC TI IM TA-3441 No. 7200-1/4
2SD1710C
Continued from preceding page.
Parameter
Symbol
hFE1
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
hFE2
VCE=5V, IC=0.6A
VCE=5V, IC=3A
fT
Cob
VCE=10V, IC=0.6A
VCB=10V, f=1MHz
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
min
18
pF
IC=3A, IB=0.6A
IC=3A, IB=0.6A
1
V
1.5
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
VCEX(sus)
IE=1mA, IC=0A
IC=2.5A, IB1=--IB2=1A, L=1mH, Clamped
Storage Time
MHz
80
IC=1mA, IE=0A
IC=5mA, RBE=∞
Fall Time
50
8
V(BR)CBO
Turn-ON Time
Unit
max
20
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
typ
V
900
V
500
V
7
V
500
V
ton
tstg
VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω
VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω
0.5
3.0
μs
tf
VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω
0.3
μs
Package Dimensions
μs
Switching Time Test Circuit
unit : mm (typ)
7502-002
5.0
8.0
3.1
INPUT
OUTPUT
IB2
RB
RL=50Ω
4.0
2.0
21.0
22.0
VR
20.4
2.0
3
SANYO : TO-3PML
800mA
600mA
400mA
4
200mA
100mA
2
50mA
20mA
VCE=5V
6
4
20°
C
Collector Current, IC -- A
1.2A
1.0A
6
IC -- VBE
8
25°C
--40°
C
IC -- VCE
8
VCC=200V
1 : Base
2 : Collector
3 : Emitter
5.45
5.45
VBE= --5V
0.6
3.5
2
+
470μF
Ta=
1
1.0
1
50Ω
+
100μF
2.8
2.0
Collector Current, IC -- A
IB1
PW=20μs
D.C.≤1%
5.6
3.4
16.0
0.6
0.8
2
IB=0mA
0
0
0
2
4
6
8
Collector-to-Emitter Voltage, VCE -- V
10
IT03804
0
0.2
0.4
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT03805
No. 7200-2/4
2SD1710C
hFE -- IC
5
25°C
2
--40°°C
10
7
5
3
5
7 0.1
2
3
5
7 1.0
2
3
3
2
0.1
7
5
7 10
IT03806
Collector Current, IC -- A
5
7 0.1
2
25°C
120°C
3
5
7 1.0
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
IT03808
Collector Current, IC -- A
1.0
7
5
3
2
ton
tf
Collector Current, IC -- A
s
1.0
7
5
3
2
0.1
7
5
7
2
10
3
5
7
2
100
3
5
Collector-to-Emitter Voltage, VCE -- V
3
5
7
IT03809
3
2
Test Circuit
1.0
IB1
IB2
7
5
IC
3
2
L
VR
IB2= --1.0A
L=200μH
VCC=20V Tc=25°C
--5V
3
10
7 1000
IT03810
2
3
5
7
2
100
3
5
Collector-to-Emitter Voltage, VCE -- V
Rth(t) -- t
5
2
1.0
7
5
7
5
Tc=25°C
Single pulse
5
7
Reverse Bias A S O
0.1
3
5
10
1m
ms
2
3
<50μs
s
3
10
P
C
Op =45W
era
tio
n
DC
2
2
0μ
10
ICP=14A
IC=7A
10
7
5
7 10
IT03807
Collector Current, IC -- A
Forward Bias A S O
2
5
2
7
5
0.1
2
3
3
tstg
3
0.1
2
2
5
Switching Time, SW Time -- s
Ta= --40°C
3
SW Time -- IC
7
1.0
5
3
Collector Current, IC -- A
IC / IB=5
7
Ta= --40°C
25°C
120°C
2
VBE(sat) -- IC
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
Collector Current, IC -- A
7
5
3
7 1000
IT03811
PC -- Tc
50
Tc=25°C
45
3
Collector Dissipation, PC -- W
Transient Thermal Resistance, Rth(t) -- °C / W
1.0
TUT
DC Current Gain, hFE
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Ta=120°C
IC / IB=5
Ta= -40°C
120°
C
7
3
VCE(sat) -- IC
3
VCE=5V
25°
C
100
2
1.0
7
5
3
2
40
30
20
10
0.1
7
5
0.1
0
2 3
5
1.0
2 3
5
10
2 3
Time, t -- ms
5
100
2 3
5
1000
IT03812
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140 150 160
IT03813
No. 7200-3/4
2SD1710C
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
PS No. 7200-4/4