TT2042 Ordering number : EN9055 SANYO Semiconductors DATA SHEET TT2042 NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Application • Suitable for use in control motor drivers, printer hammer drivers, relay drivers, audio output and constant-voltage regulators. Features • • • • High DC current gain. Wide ASO. Low saturation voltage. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO 180 160 V 6 V Collector Current VEBO IC 10 A Collector Current (Pulse) ICP 16 A 2.5 W Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C V 110 W 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 32509IA MS IM TB-00001695 No.9055-1/4 TT2042 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain-Bandwidth Product fT Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO min typ VCE=5V, IC=6.5A VCE=5V, IC=6.5A Unit max VCB=180V, IE=0A VEB=6V, IC=0A 0.1 mA 10 mA 5000 15 IC=5.5A, IB=11mA IC=5.5A, IB=11mA Turn-ON Time IC=1mA, IE=0A VCEO(SUS) IC=100mA, IB=0A ton See specified Test Circuit. Storage Time tstg Fall Time tf Collector Sustain Voltage Ratings Conditions MHz 1.5 V 2.3 V 180 V 160 V 0.9 μs See specified Test Circuit. 8.0 μs See specified Test Circuit. 3.0 μs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7503-003 OUTPUT 4.8 IB1 3.2 INPUT T.U.T IB2 RB RL VR 50Ω R1 + 1.3 1.6 2.0 0.6 2 3 1.4 SANYO : TO-3PB 5.45 IC -- VCE 10 8 7 6 5 2mA 1mA 800μA 600μA 4 3 2 VCE=5V 9 Collector Current, IC -- A Collector Current, IC -- A 9 IC -- VBE 10 from above 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 8 7 6 20° C 5.45 VCC=50V IC=500IB1=500IB2=6.5A 1 : Base 2 : Collector 3 : Emitter 0.6 470μF VBE= --5V 5 Ta= 1 1 + 100μF 20.0 1.0 R2 4 --40°C 15.0 20.0 PW=50μs D.C.≤1% 1.2 2.6 3.5 2.0 25°C 15.6 14.0 3 2 400μA 1 1 IB=0A 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-to-Emitter Voltage, VCE -- V 4.5 0 5.0 IT06685 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Base-to-Emitter Voltage, VBE -- V IT06686 No.9055-2/4 TT2042 hFE -- IC 100000 7 5 120 Ta= °C C 25° °C 0 4 -- 3 2 1000 7 5 3 IC / IB=500 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V DC Current Gain, hFE 3 2 10000 7 5 VCE(sat) -- IC 10 VCE=5V 5 3 2 25°C Ta= --40°C 1.0 7 120°C 5 3 2 2 100 0.1 2 3 5 7 2 1.0 3 5 Collector Current, IC -- A 1.0 3 5 7 10 IT06688 ICP=16A 2 Collector Current, IC -- A C 120° 2 1.0 IC=10A 10 7 5 DC 3 s Ta= --40°C 7 m 2 5 Forward Bias A S O 3 10 25°C 3 Collector Current, IC -- A IC / IB=500 3 2 =1 PT Base-to-Emitter Saturation Voltage, VBE(sat) -- V 10 IT06687 VBE(sat) -- IC 5 m 10 s 0m s op era 2 tio n 1.0 7 5 3 7 2 5 0.1 2 3 5 7 2 1.0 3 Collector Current, IC -- A 5 Tc=25°C Single pulse 0.1 1.0 7 10 IT06689 2 3 5 7 10 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 3.0 3 IT06690 PC -- Tc 140 120 2.5 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 0.1 0.1 7 2.0 No he at 1.5 sin k 1.0 0.5 110 100 80 60 40 20 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06683 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06684 No.9055-3/4 TT2042 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2009. Specifications and information herein are subject to change without notice. PS No.9055-4/4