SEMIKRON SEMIX302GB126HDS

SEMiX302GB126HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 150 °C
1200
V
Tc = 25 °C
311
A
Tc = 80 °C
218
A
200
A
ICnom
ICRM
SEMiX®2s
tpsc
Trench IGBT Modules
ICRM = 2xICnom
400
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
292
A
Tc = 80 °C
202
A
200
A
VGES
VCC = 600 V
VGE ≤ 20 V
Tj = 125 °C
VCES ≤ 1200 V
Tj
Inverse diode
SEMiX302GB126HDs
IF
Preliminary Data
Tj = 150 °C
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
IFRM
IFRM = 2xIFnom
400
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1300
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tstg
Visol
• Case temperatur limited to TC=125°C
max.
• Not for new design
A
°C
4000
V
Characteristics
Symbol
Remarks
AC sinus 50Hz, t = 1 min
600
-40 ... 125
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.7
2.1
V
Tj = 125 °C
2.00
2.45
V
V
IGBT
VCE(sat)
IC = 200 A
VGE = 15 V
chiplevel
VCE0
rCE
VGE = 15 V
VGE(th)
VGE=VCE, IC = 8 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 25 °C
1
1.2
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
3.5
4.5
mΩ
mΩ
Tj = 125 °C
5
Tj = 25 °C
5.5
6.8
5.8
6.5
V
0.1
0.3
mA
Tj = 125 °C
mA
f = 1 MHz
14.4
nF
f = 1 MHz
0.75
nF
f = 1 MHz
0.65
nF
QG
VGE = - 8 V...+ 15 V
1600
nC
RGint
Tj = 25 °C
3.75
Ω
td(on)
VCC = 600 V
IC = 200 A
Tj = 125 °C
RG on = 2.8 Ω
RG off = 2.8 Ω
320
ns
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
per IGBT
Rth(j-s)
per IGBT
50
ns
30
mJ
600
ns
100
ns
26
mJ
0.12
K/W
K/W
GB
© by SEMIKRON
Rev. 27 – 02.12.2008
1
SEMiX302GB126HDs
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 200 A
VGE = 0 V
chiplevel
VF0
SEMiX®2s
rF
min.
typ.
max.
Unit
Tj = 25 °C
1.6
1.8
V
Tj = 125 °C
1.6
1.8
V
V
Tj = 25 °C
0.9
1
1.1
Tj = 125 °C
0.7
0.8
0.9
V
Tj = 25 °C
2.5
3.0
3.5
mΩ
3.5
4.0
4.5
mΩ
Rth(j-c)
Tj = 125 °C
IF = 200 A
Tj = 125 °C
di/dtoff = 5900 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 600 V
per diode
SEMiX302GB126HDs
Rth(j-s)
per diode
Preliminary Data
Module
IRRM
Trench IGBT Modules
Qrr
Err
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
RCC'+EE'
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
µC
22.5
mJ
K/W
K/W
TC = 25 °C
TC = 125 °C
to terminals (M6)
Mt
A
55
0.19
LCE
Features
290
18
nH
0.7
mΩ
1
mΩ
0.045
K/W
3
5
Nm
2.5
5
Nm
Nm
w
250
g
Temperature sensor
R100
Tc=100°C (R25=5 kΩ)
0,493
±5%
kΩ
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
K
GB
2
Rev. 27 – 02.12.2008
© by SEMIKRON
SEMiX302GB126HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
© by SEMIKRON
Rev. 27 – 02.12.2008
3
SEMiX302GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 27 – 02.12.2008
© by SEMIKRON
SEMiX302GB126HDs
SEMiX 2s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 27 – 02.12.2008
5