SEMiX604GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX®4s Trench IGBT Modules ICRM = 3xICnom 1800 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 707 A Tc = 80 °C 529 A 600 A VGES tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SEMiX604GB12E4s Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding IFRM IFRM = 3xIFnom 1800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 3240 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE Tj = 25 °C 1.7 1.9 mΩ IGBT Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 6,2 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω VCE(sat) IC = 600 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C VGE(th) VGE=VCE, IC = 24 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon VCC = 600 V IC = 600 A Tj = 25 °C 2.7 mΩ 6.5 V 0.12 0.36 mA mA f = 1 MHz 37.2 nF f = 1 MHz 2.32 nF f = 1 MHz 2.04 nF 3400 nC 1.25 Ω Tj = 150 °C 374 ns Tj = 150 °C 85 ns Tj = 150 °C 35 mJ 1277 ns 114 ns Eoff Rth(j-c) per IGBT tf 2.5 5.8 Tj = 150 °C RG on = 1.7 Ω Tj = 150 °C RG off = 6.9 Ω di/dton = 7100 A/µs Tj = 150 °C di/dtoff = 6350 A/µs Tj = 150 °C td(off) 5 110.4 mJ 0.049 K/W GB © by SEMIKRON Rev. 1 – 20.02.2009 1 SEMiX604GB12E4s Characteristics Symbol Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF SEMiX®4s IRRM Qrr Trench IGBT Modules Err Rth(j-c) min. Tj = 25 °C Tj = 150 °C typ. max. Unit 2.1 2.46 V 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 1.1 1.4 1.6 mΩ 1.9 2.1 mΩ Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 6000 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 1.7 430 A 100 µC 44 mJ 0.086 K/W Module SEMiX604GB12E4s LCE RCC'+EE' Features res., terminal-chip 22 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Rth(c-s) per module Ms to heat sink (M5) 0.03 Typical Applications Temperatur Sensor • AC inverter drives • UPS • Electronic Welding R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 400 g 493 ± 5% Ω 3550 ±2% K Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 6,2 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω GB 2 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX604GB12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 20.02.2009 3 SEMiX604GB12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX604GB12E4s SEMiX 4s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 1 – 20.02.2009 5