SEMIKRON SKM150GAL12V

SKM150GAL12V
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1200
V
Tc = 25 °C
225
A
Tc = 80 °C
170
A
150
A
ICnom
ICRM
SEMITRANS® 2
ICRM = 3xICnom
450
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
189
A
Tc = 80 °C
141
A
150
A
VGES
tpsc
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 125 °C
Tj
Inverse diode
IF
SKM150GAL12V
Tj = 175 °C
IFnom
Target Data
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
IFRM
IFRM = 3xIFnom
450
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
-40 ... 175
°C
Tc = 25 °C
189
A
Tc = 80 °C
141
A
150
A
Tj
Freewheeling diode
IF
IFnom
IFRM
IFRM = 3xIFnom
450
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
-40 ... 175
°C
Tj
Typical Applications*
Module
•
•
•
•
It(RMS)
DC/DC – converter
Brake chopper
Switched reluctance motor
DC – Motor
Tj = 175 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
200
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
1.75
2.2
V
IGBT
VCE(sat)
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
2.2
2.65
V
VCE0
Tj = 25 °C
0.94
1.25
V
Tj = 150 °C
0.88
1.22
V
rCE
Tj = 25 °C
5.4
6.3
mΩ
VGE = 15 V
VGE(th)
VGE=VCE, IC = 6 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
6
Tj = 25 °C
8.8
9.5
mΩ
6.5
7
V
0.1
0.3
mA
Tj = 150 °C
mA
f = 1 MHz
9
nF
f = 1 MHz
0.89
nF
f = 1 MHz
0.884
nF
1750
nC
5.0
Ω
QG
RGint
GAL
© by SEMIKRON
Rev. 0 – 23.12.2009
1
SKM150GAL12V
Characteristics
Symbol
Conditions
td(on)
VCC = 600 V
IC = 150 A
VGE = ±15 V
RG on = 0.67 Ω
RG off = 0.67 Ω
tr
Eon
td(off)
tf
Rth(j-c)
SEMITRANS 2
SKM150GAL12V
Target Data
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
•
•
•
•
DC/DC – converter
Brake chopper
Switched reluctance motor
DC – Motor
Err
Rth(j-c)
Err
Rth(j-c)
15
mJ
Tj = 150 °C
ns
Tj = 150 °C
ns
12
mJ
0.19
K/W
2.5
V
Tj = 150 °C
2.1
2.4
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
5.6
6.4
mΩ
Tj = 150 °C
7.8
8.5
mΩ
IF = 150 A
Tj = 150 °C
di/dtoff = 3100 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per diode
120
A
31.3
µC
13
mJ
rF
Qrr
ns
Tj = 150 °C
2.1
Freewheeling diode
VF = VEC IF = 150 A
VGE = 0 V
chip
VF0
IRRM
Unit
Tj = 25 °C
rF
Qrr
max.
ns
per IGBT
Inverse diode
VF = VEC IF = 150 A
VGE = 0 V
chip
VF0
IRRM
typ.
Tj = 150 °C
Tj = 150 °C
Eoff
®
min.
Tj = 150 °C
0.31
K/W
Tj = 25 °C
2.14
2.46
V
Tj = 150 °C
2.07
2.38
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
5.6
6.4
mΩ
7.8
8.5
mΩ
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3100 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per Diode
31.3
µC
13
mJ
TC = 25 °C
0.65
mΩ
TC = 125 °C
1
mΩ
120
A
0.31
K/W
Module
LCE
RCC'+EE'
30
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
0.04
to terminals M5
0.05
nH
K/W
3
5
Nm
2.5
5
Nm
Nm
w
160
g
GAL
2
Rev. 0 – 23.12.2009
© by SEMIKRON
SKM150GAL12V
SEMITRANS 2
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 23.12.2009
3