SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 79 A Tc = 80 °C 60 A 50 A ICnom ICRM SEMITRANS® 2 ICRM = 3xICnom 150 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 65 A Tc = 80 °C 49 A 50 A VGES tpsc VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 125 °C Tj Inverse diode IF SKM50GB12V Tj = 175 °C IFnom Target Data Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 IFRM IFRM = 3xIFnom 150 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 270 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 200 A -40 ... 125 °C 4000 V Characteristics Symbol typ. max. Unit Tj = 25 °C 1.85 2.3 V Tj = 150 °C 2.2 2.65 V VCE0 Tj = 25 °C 0.94 1.25 V Tj = 150 °C 0.88 1.22 V rCE Tj = 25 °C 18.2 21.0 mΩ 26.4 28.6 mΩ 6.5 7 V 0.1 0.3 mA Typical Applications* IGBT • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz VCE(sat) Conditions IC = 50 A VGE = 15 V chiplevel VGE = 15 V VGE(th) VGE=VCE, IC = 2 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V min. Tj = 150 °C 6 Tj = 25 °C Tj = 150 °C 3 nF f = 1 MHz 0.30 nF f = 1 MHz 0.295 nF 540 nC QG RGint td(on) tr Eon td(off) tf Ω 4.0 VCC = 600 V IC = 50 A VGE = ±15 V RG on = 13 Ω RG off = 13 Ω Tj = 150 °C ns Tj = 150 °C Tj = 150 °C ns 5 mJ Tj = 150 °C ns Tj = 150 °C ns Tj = 150 °C Eoff Rth(j-c) mA f = 1 MHz per IGBT 4 mJ 0.53 K/W GB © by SEMIKRON Rev. 0 – 23.12.2009 1 SKM50GB12V Characteristics Symbol SEMITRANS® 2 Conditions min. typ. max. Unit Tj = 25 °C 2.2 2.5 V Tj = 150 °C 2.2 2.5 V Tj = 25 °C 1.3 1.5 V Inverse diode VF = VEC IF = 50 A VGE = 0 V chip VF0 Tj = 150 °C 0.9 1.1 V rF Tj = 25 °C 18.4 20.8 mΩ Tj = 150 °C IF = 50 A Tj = 150 °C di/dtoff = 1380 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode 25.6 28.0 mΩ TC = 25 °C 0.65 mΩ TC = 125 °C 1 mΩ IRRM Qrr Err Rth(j-c) 35 A 8.7 µC 3.6 mJ 0.84 K/W Module SKM50GB12V LCE Target Data RCC'+EE' Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 30 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 0.04 to terminals M5 0.05 nH K/W 3 5 Nm 2.5 5 Nm Nm w 160 g Typical Applications* • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz GB 2 Rev. 0 – 23.12.2009 © by SEMIKRON SKM50GB12V SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 23.12.2009 3