STMICROELECTRONICS STX8NM60N

STx8NM60N
N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK, D2PAK
Features
VDSS
(@Tjmax)
Type
RDS(on)
max
ID
3
2
1
3
STB8NM60N
650 V
< 0.65 Ω
7A
STD8NM60N
650 V
< 0.65 Ω
7A
STD8NM60N-1
650 V
< 0.65 Ω
7A
STF8NM60N
650 V
< 0.65 Ω
STP8NM60N
650 V
< 0.65 Ω
7A
2
1
IPAK
TO-220
3
1
(1)
D²PAK
7A
3
3
1
1. Limited only by maximum temperature allowed
1
DPAK
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
Figure 1.
2
TO-220FP
Internal schematic diagram
Application
$
■
Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
'
3
!-V
Device summary
Order codes
Marking
Package
Packaging
STB8NM60N
B8NM60N
D²PAK
Tape and reel
STD8NM60N
D8NM60N
DPAK
Tape and reel
STD8NM60N-1
D8NM60N
IPAK
Tube
STF8NM60N
F8NM60N
TO-220FP
Tube
STP8NM60N
P8NM60N
TO-220
Tube
November 2008
Rev 3
1/19
www.st.com
19
Contents
STx8NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
................................................ 9
STx8NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220, IPAK, DPAK,
D²PAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at
TC = 25 °C
7
7 (1)
A
ID
Drain current (continuous) at
TC = 100 °C
4.3
4.3 (1)
A
IDM (2)
Drain current (pulsed)
28
28 (1)
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t = 1 s;TC = 25 °C)
--
2500
V
dv/dt (3) Peak diode recovery voltage slope
Tj
Tstg
Operating junction temperature
Storage temperature
15
V/ns
-55 to 150
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220 IPAK DPAK D²PAK TO-220FP
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
Tl
Table 4.
Symbol
1.78
62.5
100
Maximum lead temperature for
soldering purpose
5
--
62.5
300
°C/W
°C/W
°C
Avalanche characteristics
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
200
mJ
3/19
Electrical characteristics
2
STx8NM60N
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
dv/dt(1)
1.
Parameter
Drain-source breakdown
voltage
Drain-source voltage slope
Test conditions
ID = 1 mA, VGS = 0
Min.
Typ. Max. Unit
600
VDD = 480 V, ID = 7 A,
V
38
VGS =10 V
VDS = Max rating,
V/ns
VDS = Max rating,Tc = 125 °C
1
100
µA
µA
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 3.5 A
0.56
0.65
Ω
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
2
Characteristics value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
gfs(1)
Forward transconductance
VDS = 15 V, ID= 3.5 A
15
S
Ciss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
560
37
2
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
153
pF
RG
Gate input resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
6
Ω
Qg
Total gate charge
Gate-source charge
Gate-drain charge
19
3
10
nC
nC
nC
Coss
Crss
Coss eq.(2)
Qgs
Qgd
1.
On/off states
VDD = 480 V, ID = 7 A
VGS = 10 V
(see Figure 19)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/19
STx8NM60N
Electrical characteristics
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
VDD = 300 V, ID = 3.5 A,
Typ.
Max.
10
12
40
10
RG = 4.7 Ω, VGS = 10 V
(see Figure 18),
(see Figure 23)
Unit
ns
ns
ns
ns
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 7 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V, Tj = 25
°C (see Figure 20)
310
2.40
15
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7A, di/dt = 100
A/µs, VDD = 30 V,
Tj=150°C
(see Figure 20)
480
3.50
15
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Min.
Typ.
Max.
Unit
7
28
A
A
1.3
V
1. Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/19
Electrical characteristics
STx8NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
Figure 4.
Safe operating area for DPAK, IPAK Figure 5.
Thermal impedance for DPAK, IPAK
Figure 6.
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
6/19
Figure 3.
Figure 7.
Thermal impedance for TO-220,
D²PAK
STx8NM60N
Figure 8.
Electrical characteristics
Output characteristics
Figure 10. Transconductance
Figure 9.
Transfer characteristics
Figure 11. Static-drain source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
7/19
Electrical characteristics
STx8NM60N
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
8/19
STx8NM60N
3
Test circuit
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/19
Package mechanical data
4
STx8NM60N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/19
STx8NM60N
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/19
Package mechanical data
STx8NM60N
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.5
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_J
12/19
STx8NM60N
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
0.95
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
e
e1
6.60
2.28
4.40
H
4.60
16.10
L
9.00
9.40
(L1)
0.80
1.20
L2
0.80
V1
10 o
0068771_H
13/19
Package mechanical data
STx8NM60N
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
Typ
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
0079457_M
14/19
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
STx8NM60N
Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
D1
E
6.20
5.10
6.40
E1
6.60
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
R
V2
1
0.20
0o
8o
0068772_G
15/19
Packaging mechanical data
5
STx8NM60N
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
16/19
inch
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STx8NM60N
Packaging mechanical data
D 2 PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
0.059 0.063
MIN.
330
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
D
1.5
1.6
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
0.449 0.456
F
11.4
11.6
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
17/19
Revision history
6
STx8NM60N
Revision history
Table 9.
18/19
Document revision history
Date
Revision
Changes
29-Aug-2007
1
First release
07-Jan-2008
2
IDSS value has been corrected on Table 5: On/off states
21-Nov-2008
3
Added new package, mechanical data.
STx8NM60N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
19/19