STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Type VDSS (@Tjmax) RDS(on) max STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V 650 V 650 V 650 V 650 V < 0.45 Ω < 0.45 Ω < 0.45 Ω < 0.45 Ω < 0.45 Ω ID 3 10 A 10 A(1) 10 A 10 A 10 A 3 12 1 DPAK I²PAK 3 2 1 IPAK 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities 3 1 TO-220 Figure 1. 3 2 1 2 TO-220FP Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STD11NM60ND 11NM60ND DPAK Tape and reel STF11NM60ND 11NM60ND TO-220FP Tube STI11NM60ND 11NM60ND 2PAK Tube STP11NM60ND 11NM60ND TO-220 Tube STU11NM60ND 11NM60ND IPAK Tube April 2008 I Rev 1 1/18 www.st.com 18 Contents STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter DPAK/I²PAK TO220/IPAK Unit TO-220FP VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25°C 10 10 (1) A ID Drain current (continuous) at TC = 100°C 6.3 6.3(1) A IDM (2) Drain current (pulsed) 40 40 (1) A PTOT Total dissipation at TC = 25°C 90 25 W dv/dt (3) Peak diode recovery voltage slope 40 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Tstg Storage temperature Tj V/ns -- 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 I²PAK DPAK IPAK TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max Tl Table 4. Maximum lead temperature for soldering purposes 1.38 62.5 -- -- 5 °C/W -- 100 62.5 °C/W 50 -- -- °C/W 300 °C Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive(1) 3.5 A EAS Single pulse avalanche energy (2) 200 mJ 1. Pulse width limited by Tj max 2. starting Tj= 25 °C, ID=IAS, VDD= 50 V 3/18 Electrical characteristics 2 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Test conditions ID = 1 mA, VGS= 0 Min. Typ. Max. 600 VDD = 480 V,ID = 10 A, V 45 VGS = 10 V Unit VDS = max rating, V/ns VDS = max rating,@125 °C 1 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5 A 0.37 0.45 Ω Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 1. Value measured at turn off under inductive load Table 6. Symbol Parameter gfs(1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15 V, ID= 5 A VDS = 50 V, f =1 MHz, VGS = 0 Min. 7.5 S 850 44 5 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0V to 480 V 130 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 3.7 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge 30 4 16 nC nC nC Coss eq.(2) 1. Dynamic VDD = 480 V, ID = 10 A VGS = 10 V (see Figure 19) Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min Typ Max 16 7 50 9 VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Unit ns ns ns ns Source drain diode Parameter Test conditions Min Typ Max Unit 10 40 A A 1.3 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 10 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) 130 0.69 11 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 10 A Tj = 150 °C (see Figure 20) 200 1.2 12 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/18 Electrical characteristics STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / I²PAK Figure 3. Thermal impedance for TO-220 / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK / IPAK Figure 7. 6/18 Thermal impedance for DPAK / IPAK STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Figure 8. Output characteristics Figure 10. Transconductance Figure 9. Electrical characteristics Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data 4 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 12/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 13/18 Package mechanical data STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 14/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 e e1 6.60 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 15/18 Packaging mechanical data 5 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 16/18 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND 6 Revision history Revision history Table 9. Document revision history Date Revision 23-Apr-2008 1 Changes First release 17/18 STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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