STx25NM50N N-channel 500 V, 0.11 Ω, 22 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID 3 3 STB25NM50N 550 V < 0.140 Ω 22 A STB25NM50N-1 550 V < 0.140 Ω 22 A STF25NM50N 550 V < 0.140 Ω 22 A(1) 1 550 V < 0.140 Ω 22 A STW25NM50N 550 V < 0.140 Ω 22 A 3 D²PAK Low input capacitance and gate charge ■ Low gate input resistance Figure 1. Application ■ 3 12 2 3 1 TO-247 I²PAK ■ TO-220 TO-220FP 1. Limited only by maximum temperature allowed 100% avalanche tested 2 1 STP25NM50N ■ 1 2 Internal schematic diagram Switching applications Description This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB25NM50N B25NM50N D2PAK Tape and reel STB25NM50N-1 B25NM50N 2PAK Tube STF25NM50N F25NM50N TO-220FP Tube STP25NM50N P25NM50N TO-220 Tube STW25NM50N W25NM50N TO-247 Tube November 2008 I Rev 13 1/18 www.st.com 18 Contents STx25NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/18 ................................................ 9 STx25NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, I²PAK TO-220FP D²PAK, TO-247 VDS Drain-source voltage (VGS = 0) 500 VGS Gate- source voltage ±25 Unit V V (1) A ID Drain current (continuous) at TC = 25 °C 22 22 ID Drain current (continuous) at TC = 100 °C 14 14 (1) A Drain current (pulsed) 88 (1) A Total dissipation at TC = 25 °C 160 40 W Derating factor 1.28 0.32 W/°C -- 2500 V IDM (2) PTOT VISO dv/dt (3) Tstg Tj Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Peak diode recovery voltage slope Storage temperature 88 15 V/ns –55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter TO-220, I²PAK TO-220FP D²PAK, TO-247 Unit Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 4. Symbol 0.78 3.1 °C/W Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 10 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ 3/18 Electrical characteristics 2 STx25NM50N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD = 400 V, ID = 25 A, VGS = 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 11 A 500 V 44 2 3 V/ns Ω 0.110 0.140 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS =15 V, ID = 11 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 2565 511 77 Equivalent output capacitance VGS = 0, VDS = 0 to 400 V 315 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 22 A, VGS = 10 V, (see Figure 19) 84 11 35 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 1.6 Ω Coss eq. (2) 19 S pF pF pF 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/18 STx25NM50N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Parameter ISD Source-drain current Source-drain current (pulsed) ISDM VSD (2) trr Qrr IRRM trr Qrr IRRM Min. Typ. Max. Unit 23 23 75 22 VDD = 250 V, ID = 11 A RG = 4.7 Ω VGS = 10 V (see Figure 18) ns ns ns ns Source drain diode Symbol (1) Test conditions Test conditions Min Typ. Max Unit 22 88 A A 1.3 V Forward on voltage ISD = 22 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD = 100 V (see Figure 23) 460 6.9 30 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 23) 532 8.25 31 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/18 Electrical characteristics STx25NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/18 STx25NM50N Figure 8. Output characteristics Figure 10. Transconductance Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics STx25NM50N Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STx25NM50N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data 4 STx25NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:www.st.com 10/18 STx25NM50N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STx25NM50N D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° 0079457_M 12/18 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STx25NM50N Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 13/18 Package mechanical data STx25NM50N TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 14/18 L5 1 2 3 L4 STx25NM50N Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 Typ Max. 5.15 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 e 15.75 5.45 L 14.20 L1 3.70 L2 14.80 4.30 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 15/18 Packaging mechanical data 5 STx25NM50N Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 MAX. D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 0.449 0.456 F 11.4 11.6 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STx25NM50N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 30-Nov-2004 1 First release. 08-Mar-2005 2 Inserted curves 22-Mar-2005 3 Modified title 13-Apr-2005 4 Modified some values 28-Apr-2005 5 Modified some values on Table 8 16-May-2005 6 Modified values on Table 7 17-Jun-2005 7 Inserted new row on Table 6 07-Sep-2005 8 Inserted ecopack indication 05-Oct-2005 9 Modified curves Figure 8, Figure 9 09-Nov-2005 10 Modified Figure 11 14-Nov-2006 11 New template, new value on Absolute maximum ratings 19-Jan-2007 12 Typo mistake on Table 7 17-Nov-2008 13 Corrected marking in Table 1 17/18 STx25NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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