TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE(SAT) Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure ● 0.55V @ IC / IB = 6A / 300mA TSC5988CT B0 TSC5988CT A3 Epitaxial Planar Type Package Packing TO-92 TO-92 1Kpcs / Bulk 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Symbol Limit Unit VCBO VCEO VEBO 150 60 6 5 20 1.0 +150 - 55 to +150 V V V IC Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ptot TJ TSTG A W C o C o Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC =100uA, IE =0 BVCBO 150 170 -- V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC =10mA, IB =0 IE =100uA, IC =0 BVCEO BVEBO 60 6 70 8 --- V V IEBO ---- ---- 50 1 10 nA uA nA IC =100mA, IB =5mA IC =1A, IB =50mA VCE(SAT) 1 VCE(SAT) 2 --- 20 80 50 120 IC =2A, IB =100mA IC =5A, IB =200mA VCE(SAT) 3 VCE(SAT) 4 --- 150 260 220 -- IC =4A, IB =200mA VCE =1V, IC =6A VBE(SAT) VBE(ON) --- 920 1.05 1050 1.2 VCE =1V, IC =10mA VCE =1V, IC =2A hFE 1 hFE 2 100 120 -200 -300 VCE =1V, IC =5A VCE =1V, IC =10A hFE 3 hFE 4 75 -- 140 70 --- VCE =10V, IC=100mA VCB =10V, f=1MHz fT Cob --- 130 72 --- Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance VCB =120V, IE =0 VCB =120V, TA =100ºC VEB =6V, IC =0 1/5 ICBO mV mV V MHz pF Version: C08 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain vs. Collector Current Figure 2. VCE(SAT) vs. Collector Current Figure 3. VBE(SAT) vs. Collector Current Figure 4. fT vs. Emitter Current Figure 5. Cob vs. Collector-Base Voltage Figure 6. Cib vs. Emitter-Base Voltage 2/5 Version: C08 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 7. Safety Operation Area Figure 8. Derating Curve 3/5 Version: C08 TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.05 0.051 0.37 0.43 0.015 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/5 Version: C08 TSC5988 NPN Silicon Planar Medium Power Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: C08