TSC TSC5988CTA3

TSC5988
NPN Silicon Planar Medium Power Transistor
TO-92
PRODUCT SUMMARY
Pin Definition:
1. Emitter
2. Base
3. Collector
BVCBO
150V
BVCEO
60V
IC
6A
VCE(SAT)
Features
●
Ordering Information
Excellent gain characteristics specified up to 10A
Part No.
Structure
●
0.55V @ IC / IB = 6A / 300mA
TSC5988CT B0
TSC5988CT A3
Epitaxial Planar Type
Package
Packing
TO-92
TO-92
1Kpcs / Bulk
2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Symbol
Limit
Unit
VCBO
VCEO
VEBO
150
60
6
5
20
1.0
+150
- 55 to +150
V
V
V
IC
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Ptot
TJ
TSTG
A
W
C
o
C
o
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC =100uA, IE =0
BVCBO
150
170
--
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC =10mA, IB =0
IE =100uA, IC =0
BVCEO
BVEBO
60
6
70
8
---
V
V
IEBO
----
----
50
1
10
nA
uA
nA
IC =100mA, IB =5mA
IC =1A, IB =50mA
VCE(SAT) 1
VCE(SAT) 2
---
20
80
50
120
IC =2A, IB =100mA
IC =5A, IB =200mA
VCE(SAT) 3
VCE(SAT) 4
---
150
260
220
--
IC =4A, IB =200mA
VCE =1V, IC =6A
VBE(SAT)
VBE(ON)
---
920
1.05
1050
1.2 VCE =1V, IC =10mA
VCE =1V, IC =2A
hFE 1
hFE 2
100
120
-200
-300
VCE =1V, IC =5A
VCE =1V, IC =10A
hFE 3
hFE 4
75
--
140
70
---
VCE =10V, IC=100mA
VCB =10V, f=1MHz
fT
Cob
---
130
72
---
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
VCB =120V, IE =0
VCB =120V, TA =100ºC
VEB =6V, IC =0
1/5
ICBO
mV
mV
V
MHz
pF
Version: C08
TSC5988
NPN Silicon Planar Medium Power Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain vs. Collector Current
Figure 2. VCE(SAT) vs. Collector Current
Figure 3. VBE(SAT) vs. Collector Current
Figure 4. fT vs. Emitter Current
Figure 5. Cob vs. Collector-Base Voltage
Figure 6. Cib vs. Emitter-Base Voltage
2/5
Version: C08
TSC5988
NPN Silicon Planar Medium Power Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 7. Safety Operation Area
Figure 8. Derating Curve
3/5
Version: C08
TSC5988
NPN Silicon Planar Medium Power Transistor
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
14.30(typ)
0.563(typ)
0.43
0.49
0.017
0.019
1.18
1.28
0.046
0.050
3.30
3.70
0.130
0.146
1.27
1.31
0.05
0.051
0.37
0.43
0.015
0.017
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L = Lot Code
4/5
Version: C08
TSC5988
NPN Silicon Planar Medium Power Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
5/5
Version: C08