Preliminary TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 500 0.48 @ VGS =10V 6.5 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Block Diagram Features ● ● ● ● Low RDS(ON) 0.48Ω (Max.) Low gate charge typical @ 36nC (Typ.) Low Crss typical @ 23pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TSM13N50CZ C0 TSM13N50CI C0 TO-220 ITO-220 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 13 A Pulsed Drain Current * IDM 52 A Avalanche Current (Single) (Note 2) IAS 13 A Single Pulse Avalanche Energy (Note 2) EAS 751 mJ Avalanche Current (Repetitive) (Note 1) IAR 13 A Repetitive Avalanche Energy (Note 1) EAR 19.5 mJ Maximum Power Dissipation @Ta = 25 C PD 40 W Operating Junction Temperature TJ 150 ºC TSTG -55 to +150 o Storage Temperature Range * Limited by maximum junction temperature 1/7 o C Version: Preliminary Preliminary TSM13N50 500V N-Channel Power MOSFET Thermal Performance Parameter Symbol TO-220 Thermal Resistance - Junction to Case ITO-220 Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Limit RӨJC RӨJA Unit 1.92 o C/W 3.12 o C/W 62.5 o C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 6.5A RDS(ON) -- 0.4 0.48 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 10V, ID = 6.5A gfs -- 15 -- S Diode Forward Voltage IS = 12A, VGS = 0V VSD -- -- 1.4 V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 400V, ID = 13A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz Qg -- 36 45 Qgs -- 8.3 -- Qgd -- 9.8 -- Ciss -- 1960 2450 Coss -- 190 237 Crss -- 23 29 td(on) -- 25 -- tr -- 100 -- td(off) -- 130 -- tf -- 100 -- tfr -- 410 -- nS -- 4.5 -- uC nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 13A, Turn-Off Delay Time VDD = 300V, RG = 25Ω Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 13A, dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=13A, L=8mH, RG=25Ω 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature 5. For design reference only, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/7 nS Version: Preliminary Preliminary TSM13N50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: Preliminary Preliminary TSM13N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: Preliminary Preliminary TSM13N50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P 5/7 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Version: Preliminary Preliminary TSM13N50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O 6/7 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Version: Preliminary Preliminary TSM13N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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