Preliminary TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Block Diagram Features ● ● ● ● Low RDS(ON) 1.2Ω (Max.) Low gate charge typical @ 28nC (Typ.) Low Crss typical @ 12pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TO-220 ITO-220 50pcs / Tube 50pcs / Tube TSM7N60CZ C0 TSM7N60CI C0 N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 7 A 3.2 A Ta = 25ºC Continuous Drain Current Ta = 100ºC ID Pulsed Drain Current * IDM 28 A Avalanche Current (Single) (Note 2) IAS 7 A Single Pulse Avalanche Energy (Note 2) EAS 230 mJ Avalanche Current (Repetitive) (Note 1) IAR 7 A Repetitive Avalanche Energy (Note 1) EAR 7.5 mJ Maximum Power Dissipation @Ta = 25 C PD 65 W Operating Junction Temperature TJ 150 ºC TSTG -55 to +150 o Storage Temperature Range * Limited by maximum junction temperature 1/7 o C Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Limit RӨJC Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA Unit 1.92 o C/W 83.3 o C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit 600 -- -- V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 3.5A RDS(ON) -- 1.0 1.2 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 10V, ID = 3.5A gfs -- 7.3 -- S Diode Forward Voltage IS = 7A, VGS = 0V VSD -- -- 1.4 V Qg -- 28 42 Qgs -- 5.5 8.3 Qgd -- 11 17 Ciss -- 950 1430 Coss -- 85 130 Crss -- 12 18 td(on) -- 16 -- tr -- 60 -- td(off) -- 80 -- tf -- 65 -- tfr -- 365 -- nS -- 4.23 -- uC Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 300V, ID = 7A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 7A, Turn-Off Delay Time VDD = 300V, RG = 25Ω Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 7A, dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=7A, L=9.8mH, RG=27Ω 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature 2/7 nS Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O 5/7 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) 1.40 (typ.) 0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P 6/7 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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