CENTRAL CP283

PROCESS
CP283
Central
Power Transistor
TM
Semiconductor Corp.
NPN - Silicon Power Transistor Chip
PROCESS DETAILS
Die Size
68 x 68 MILS
Die Thickness
9.5 MILS
Base Bonding Pad Area
18 x 11 MILS
Emitter Bonding Pad Area
18 x 12 MILS
Top Side Metalization
Al - 45,000Å
Back Side Metalization
Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
GEOMETRY
GROSS DIE PER 5 INCH WAFER
3,675
PRINCIPAL DEVICE TYPES
MJE13003
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (20-January 2006)