MJE13003 NPN SILICON TRANSISTOR FEATURES TO 126 Power dissipation PCM : 1.25 W Tamb=25 1.BASE Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 2.COLLECTOR 3.EMITTER ELECTRICAL CHARACTERISTICS Tamb=25 Parameter 123 unless otherwise specified Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 1000 Collector-emitter breakdown voltage V(BR)CEO Ic= 10 Emitter-base breakdown voltage V(BR)EBO IE= 1000 MIN TYP MAX UNIT A IE=0 700 V mA IB=0 400 V A IC=0 9 V Collector cut-off current ICBO VCB= 700 V IE=0 1000 µA Collector cut-off current ICEO VCE= 400 V IB=0 500 µA Emitter cut-off current IEBO VEB= 9 V IC=0 1000 µA HFE 1 VCE= 10 V, IC= 150 mA 8 HFE 2 VCE= 10 V, IC= 0.5 mA 5 40 DC current gain(note) Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 V Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 V Base-emitter voltage VBE IE= 2000 mA 3 V Transition frequency fT VCE=10V,Ic=100mA f =1MHz Fall time tf IC=1A, Storage time ts VCC=100V 5 MHz IB1=-IB2=0.2A 0.5 µs 2.5 µs CLASSIFICATION OF HFE(1) Rank Range 8-15 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com 15-20 20-25 25-30 Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] 30-35 35-40