PROCESS CPQ165 TRIAC 25 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 165 x 165 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 134 x 83 MILS Gate Bonding Pad Area 35 x 35 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 376 PRINCIPAL DEVICE TYPES CQDD-25M Series CQ220-25M Series CQ220-25MFP Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (20 -January 2006)