www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 FEATURES DESCRIPTION D Operates With a 3.3-V Supply The SN65HVD10, SN75HVD10, SN65HVD11, SN75HVD11, SN65HVD12, and SN75HVD12 combine a 3-state differential line driver and differential input line receiver that operate with a single 3.3-V power supply. They are designed for balanced transmission lines and meet or exceed ANSI standard TIA/EIA-485-A and ISO 8482:1993. These differential bus transceivers are monolithic integrated circuits designed for bidirectional data communication on multipoint bus-transmission lines. The drivers and receivers have active-high and active-low enables respectively, that can be externally connected together to function as direction control. Very low device standby supply current can be achieved by disabling the driver and the receiver. D Bus-Pin ESD Protection Exceeds 16 kV HBM D 1/8 Unit-Load Option Available (Up to 256 Nodes on the Bus) D Optional Driver Output Transition Times for Signaling Rates† of 1 Mbps, 10 Mbps and 25 Mbps D Meets or Exceeds the Requirements of ANSI TIA/EIA-485-A D Bus-Pin Short Circuit Protection From –7 V to 12 V D Low-Current Standby Mode . . . 1 µA Typical D Open-Circuit, Idle-Bus, and Shorted-Bus Failsafe Receiver D Thermal Shutdown Protection D Glitch-Free Power-Up and Power-Down The driver differential outputs and receiver differential inputs connect internally to form a differential input/ output (I/O) bus port that is designed to offer minimum loading to the bus whenever the driver is disabled or VCC = 0. These parts feature wide positive and negative common-mode voltage ranges, making them suitable for party-line applications. Protection for Hot-Plugging Applications D OR P PACKAGE (TOP VIEW) D SN75176 Footprint APPLICATIONS D Digital Motor Control R RE DE D 1 8 2 7 3 6 4 5 VCC B A GND D Utility Meters LOGIC DIAGRAM (POSITIVE LOGIC) D Chassis-to-Chassis Interconnects D Electronic Security Stations D Industrial Process Control D Building Automation D Point-of-Sale (POS) Terminals and Networks R RE DE 1 2 3 6 4 D 7 A B Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. †The signaling rate of a line is the number of voltage transitions that are made per second expressed in the units bps (bits per second). !"#$%! & '("")% $& ! *(+,'$%! -$%) "!-('%& '!!"# %! &*)''$%!& *)" %.) %)"#& ! )/$& &%"(#)%& &%$-$"- 0$""$%1 "!-('%! *"!')&&2 -!)& !% )')&&$",1 ',(-) %)&%2 ! $,, *$"$#)%)"& Copyright 2002−2003, Texas Instruments Incorporated www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION PACKAGE SIGNALING RATE UNIT LOADS TA 25 Mbps 1/2 10 Mbps 1/8 SN65HVD11D SN65HVD11P VP11 1 Mbps 1/8 SN65HVD12D SN65HVD12P VP12 25 Mbps 1/2 SN75HVD10D SN75HVD10P VN10 10 Mbps 1/8 1 Mbps 1/8 25 Mbps 1/2 −40°C −40 C to 85 85°C C SOIC MARKING SOIC(1) PDIP SN65HVD10D SN65HVD10P VP10 SN75HVD11D SN75HVD11P VN11 SN75HVD12D SN75HVD12P VN12 SN65HVD10QD SN65HVD10QP VP10Q 10 Mbps 1/8 SN65HVD11QD SN65HVD11QP (1) The D package is available taped and reeled. Add an R suffix to the part number (i.e., SN75HVD11DR). VP11Q −0°C −0 C to 70 70°C C −40°C to 125°C ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted(1) (2) SN65HVD10, SN75HVD10 SN65HVD11, SN75HVD11 SN65HVD12, SN75HVD12 Supply voltage range, VCC −0.3 V to 6 V Voltage range at A or B −9 V to 14 V Input voltage range at D, DE, R or RE −0.5 V to VCC + 0.5 V Voltage input range, transient pulse, A and B, through 100 Ω (see Figure 11) Electrostatic discharge Human body model(3) Charged-device model(4) −50 V to 50 V A, B and GND 16 kV All pins 4 kV All pins Charge 1 kV Continuous total power dissipation See Dissipation Rating Table Junction temperature, TJ 170°C Storage temperature range, Tstg −65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal. (3) Tested in accordance with JEDEC Standard 22, Test Method A114-A. (4) Tested in accordance with JEDEC Standard 22, Test Method C101. PACKAGE DISSIPATION RATINGS TA ≤ 25°C POWER RATING DERATING FACTOR(1) ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D(2) D(3) 597 mW 4.97 mW/°C 373 mW 298 mW 100 mW 990 mW 8.26 mW/°C 620 mW 496 mW 165 mW P 1290 mW 10.75 mW/°C 806 mW 645 mW 215 mW PACKAGE (1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow. (2) Tested in accordance with the Low-K thermal metric definitions of EIA/JESD51−3. (3) Tested in accordance with the High-K thermal metric definitions of EIA/JESD51−7. 2 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 RECOMMENDED OPERATING CONDITIONS MIN Supply voltage, VCC Voltage at any bus terminal (separately or common mode) VI or VIC NOM MAX UNIT 3 (1) −7 3.6 V 12 V V V High-level input voltage, VIH D, DE, RE 2 Low-level input voltage, VIL D, DE, RE 0 VCC 0.8 −12 12 Differential input voltage, VID (see Figure 7) Driver High-level output current, IOH −60 Receiver mA −8 Driver Low-level output current, IOL 60 Receiver 8 Differential load resistance, RL 54 Differential load capacitance, CL Signaling rate V mA 60 Ω 50 pF HVD10 25 HVD11 10 Mbps HVD12 1 Junction temperature, TJ(2) (1) The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet. (2) See thermal characteristics table for information regarding this specification. 145 °C DRIVER ELECTRICAL CHARACTERISTICS over recommended operating conditions unless otherwise noted PARAMETER VIK |VOD| TEST CONDITIONS Input clamp voltage II = −18 mA IO = 0 ∆|VOD| Change in magnitude of differential output voltage VOC(PP) VOC(SS) Peak-to-peak common-mode output voltage ∆VOC(SS) Change in steady-state common-mode output voltage IOZ High-impedance output current Input current IOS C(OD) Short-circuit output current −7 V ≤ VO ≤ 12 V Differential output capacitance VOD = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V RE at VCC, Receiver disabled and D & DE at driver enabled VCC, No load Supply current 1.5 V 1.5 −0.2 0.2 V mV 1.4 2.5 V −0.05 0.05 V See receiver input currents D II ICC VCC 400 See Figure 3 UNIT V 2 See Figure 1 and Figure 2 Steady-state common-mode output voltage MAX −1.5 RL = 54 Ω, See Figure 1 Vtest = −7 V to 12 V, See Figure 2 Differential output voltage(2) MIN TYP(1) DE −100 0 0 100 −250 250 16 µA mA pF 9 15.5 mA RE at VCC, D at VCC, DE at 0 V, No load Receiver disabled and driver disabled (standby) 1 5 µA RE at 0 V, D & DE at VCC, No load Receiver enabled and driver enabled 9 15.5 mA (1) All typical values are at 25°C and with a 3.3-V supply. (2) For TA > 85°C, VCC is ±5%. 3 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 DRIVER SWITCHING CHARACTERISTICS over recommended operating conditions unless otherwise noted PARAMETER tPLH tPHL Propagation delay time, low-to-high-level output Propagation delay time, high-to-low-level output TEST CONDITIONS tf tsk(p) tsk(pp)(2) tPZH Differential output signal rise time Differential output signal fall time Pulse skew (|tPHL − tPLH|) Part-to-part skew Propagation delay time, high-impedance-to-high-level output 5 8.5 16 HVD11 18 25 40 HVD12 135 200 300 HVD10 5 8.5 16 HVD11 18 25 40 HVD12 135 200 300 3 4.5 10 10 20 30 HVD12 100 170 300 HVD10 3 4.5 10 HVD11 tPZL Propagation delay time, high-level-to-high-impedance output Propagation delay time, high-impedance-to-low-level output 10 20 30 HVD12 100 170 300 HVD10 1.5 HVD11 2.5 HVD12 7 HVD10 6 HVD11 11 HVD12 100 HVD10 31 HVD11 55 HVD12 300 Propagation delay time, low-level-to-high-impedance output RL = 110 Ω, RE at 0 V, See Figure 5 55 HVD12 300 HVD10 26 HVD11 55 HVD12 300 RL = 110 Ω, RE at 0 V, See Figure 6 UNIT ns ns ns ns ns ns ns 25 HVD11 HVD10 tPLZ RL = 54 Ω, CL = 50 pF, See Figure 4 HVD11 HVD10 tPHZ MAX HVD10 HVD10 tr MIN TYP(1) ns ns 26 HVD11 75 HVD12 400 ns tPZH Propagation delay time, standby-to-high-level output RL = 110 Ω, RE at 3 V, See Figure 5 6 µs tPZL Propagation delay time, standby-to-low-level output RL = 110 Ω, RE at 3 V, See Figure 6 6 µs (1) All typical values are at 25°C and with a 3.3-V supply. (2) tsk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. 4 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 RECEIVER ELECTRICAL CHARACTERISTICS over recommended operating conditions unless otherwise noted PARAMETER TEST CONDITIONS VIT+ Positive-going input threshold voltage IO = −8 mA VIT− Negative-going input threshold voltage IO = 8 mA Vhys VIK Hysteresis voltage (VIT+ − VIT−) VOH VOL High-level output voltage IOZ High-impedance-state output current Enable-input clamp voltage Low-level output voltage Bus input current II = −18 mA VID = 200 mV, VID = −200 mV, VO = 0 or VCC VA or VB = −7 V VA or VB = −7 V, VA or VB = 12 V VA or VB = 12 V, VA or VB = −7 V VA or VB = −7 V, IIH IIL High-level input current, RE CID Differential input capacitance ICC Low-level input current, RE Supply current MAX UNIT −0.01 V −0.2 35 VA or VB = 12 V VA or VB = 12 V, II MIN TYP(1) mV −1.5 IOH = −8 mA, IOL = 8 mA, See Figure 7 0.4 −1 HVD11, HVD12, Other input at 0 V VCC = 0 V VCC = 0 V V See Figure 7 RE at VCC VCC = 0 V V 2.4 HVD10, Other input at 0 V VCC = 0 V VIH = 2 V VIL = 0.8 V VID = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V RE at 0 V, Receiver enabled and driver D & DE at 0 V, disabled No load 1 0.05 0.11 0.06 0.13 −0.1 −0.05 −0.05 −0.04 0.5 0.25 0.5 −0.2 −0.4 −0.15 µA mA 0.2 −0.4 V mA −30 0 µA −30 0 µA 15 pF 4 8 mA RE at VCC, D at VCC, DE at 0 V, No load Receiver disabled and driver disabled (standby) 1 5 µA RE at 0 V, D & DE at VCC, No load Receiver enabled and driver enabled 9 15.5 mA (1) All typical values are at 25°C and with a 3.3-V supply. 5 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 RECEIVER SWITCHING CHARACTERISTICS over recommended operating conditions unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT tPLH tPHL Propagation delay time, low-to-high-level output HVD10 12.5 20 25 Propagation delay time, high-to-low-level output HVD10 12.5 20 25 tPLH Propagation delay time, low-to-high-level output HVD11 HVD12 30 55 70 ns 30 55 70 ns tPHL Propagation delay time, high-to-low-level output tsk(p) Pulse skew (|tPHL − tPLH|) tsk(pp)(2) Part-to-part skew tr tf Output signal rise time tPZH(1) tPZL(1) Output enable time to high level tPHZ tPLZ tPZH(2) Output disable time from high level HVD11 HVD12 VID = −1.5 V to 1.5 V, CL = 15 pF, See Figure 8 HVD10 1.5 HVD11 4 HVD12 4 HVD10 8 HVD11 15 HVD12 15 CL = 15 pF, See Figure 8 Output signal fall time 1 2 5 1 2 5 ns ns ns ns 15 Output enable time to low level 15 CL = 15 pF, DE at 3 V, See Figure 9 20 Output disable time from low level ns 15 Propagation delay time, standby-to-high-level output 6 CL = 15 pF, DE at 0, µss See Figure 10 tPZL(2) Propagation delay time, standby-to-low-level output 6 (1) All typical values are at 25°C and with a 3.3-V supply. (2) tsk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. THERMAL CHARACTERISTICS over operating free-air temperature range unless otherwise noted(1) PARAMETER θJA Junction−to−ambient thermal resistance(2) θJB Junction−to−board thermal resistance θJC PD TA TEST CONDITIONS (3) High−K board , No airflow D pkg No airflow(4) P pkg Ambient air temperature TYP MAX 121 UNITS °C/W 93 High−K board D pkg 67 °C/W See Note (4) P pkg 57 °C/W D pkg 41 P pkg 55 Junction−to−case thermal resistance Device power dissipation MIN RL= 60Ω, CL = 50 pF, DE at VCC RE at 0 V, Input to D a 50% duty cycle square wave at indicated signaling rate High−K board, No airflow No airflow(4) °C/W HVD10 (25 Mbps) 198 233 mW HVD11 (10 Mbps) 141 176 mW HVD12 (500 kbps) 133 161 mW D pkg −40 116 P pkg −40 123 °C TJSD Thermal shutdown junction temperature 165 °C (1) See Application Information section for an explanation of these parameters. (2) The intent of θJA specification is solely for a thermal performance comparison of one package to another in a standardized environment. This methodology is not meant to and will not predict the performance of a package in an application-specific environment. (3) JSD51−7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages. (4) JESD51−10, Test Boards for Through-Hole Perimeter Leaded Package Thermal Measurements. 6 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 PARAMETER MEASUREMENT INFORMATION VCC DE II 375 Ω ±1% VCC IOA A DE VOD 0 or 3 V B 54 Ω ±1% A D VOD 0 or 3 V IOB 60 Ω ±1% + _ −7 V < V(test) < 12 V B VI 375 Ω ±1% VOB VOA Figure 2. Driver VOD With Common-Mode Loading Test Circuit Figure 1. Driver VOD Test Circuit and Voltage and Current Definitions VCC DE Input D 27 Ω ± 1% A VA B VB VOC(PP) 27 Ω ± 1% B A CL = 50 pF ±20% VOC ∆VOC(SS) VOC CL Includes Fixture and Instrumentation Capacitance Input: PRR = 500 kHz, 50% Duty Cycle,tr<6ns, tf<6ns, ZO = 50 Ω Figure 3. Test Circuit and Definitions for the Driver Common-Mode Output Voltage 3V VCC DE D Input Generator VI A B 50 Ω VOD RL = 54 Ω ± 1% 1.5 V CL = 50 pF ±20% VI CL Includes Fixture and Instrumentation Capacitance tPLH 1.5 V tPHL 90% VOD tr ≈2V 90% 0V 10% tf 0V 10% ≈ −2 V Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω Figure 4. Driver Switching Test Circuit and Voltage Waveforms A 3V D 3V S1 VO VI 1.5 V 1.5 V B DE Input Generator VI 50 Ω CL = 50 pF ±20% CL Includes Fixture and Instrumentation Capacitance RL = 110 Ω ± 1% 0.5 V 0V tPZH VOH VO 2.3 V tPHZ ≈0V Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω Figure 5. Driver High-Level Enable and Disable Time Test Circuit and Voltage Waveforms 7 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 3V A 3V D VI ≈3V VI S1 1.5 V 1.5 V VO DE Input Generator RL = 110 Ω ± 1% 50 Ω 0V B tPZL tPLZ ≈3V CL = 50 pF ±20% 0.5 V CL Includes Fixture and Instrumentation Capacitance VO 2.3 V VOL Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω Figure 6. Driver Low-Level Output Enable and Disable Time Test Circuit and Voltage Waveforms IA VID VB VIC VA + VB 2 A IO R VA B VO IB Figure 7. Receiver Voltage and Current Definitions A Input Generator R VI 50 Ω 1.5 V 0V B VO CL = 15 pF ±20% RE CL Includes Fixture and Instrumentation Capacitance Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω 3V 1.5 V VI 1.5 V 0V tPLH VO tPHL 90% 90% 1.5 V 10% tr VOH 1.5 V 10% V OL tf Figure 8. Receiver Switching Test Circuit and Voltage Waveforms 8 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 3V 3V A DE 0 V or 3 V R D VO B RE Input Generator VI A 1 kΩ ± 1% S1 CL = 15 pF ±20% B CL Includes Fixture and Instrumentation Capacitance 50 Ω Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω 3V VI 1.5 V 1.5 V 0V tPZH(1) tPHZ VOH −0.5 V VOH D at 3 V S1 to B 1.5 V VO ≈0V tPZL(1) tPLZ ≈3V VO 1.5 V VOL +0.5 V D at 0 V S1 to A VOL Figure 9. Receiver Enable and Disable Time Test Circuit and Voltage Waveforms With Drivers Enabled 9 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 3V A 0 V or 1.5 V R B 1.5 V or 0 V RE Input Generator VI A 1 kΩ ± 1% VO S1 CL = 15 pF ±20% B CL Includes Fixture and Instrumentation Capacitance 50 Ω Generator: PRR = 100 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω 3V VI 1.5 V 0V tPZH(2) VOH A at 1.5 V B at 0 V S1 to B 1.5 V VO GND tPZL(2) 3V 1.5 V VO A at 0 V B at 1.5 V S1 to A VOL Figure 10. Receiver Enable Time From Standby (Driver Disabled) 0 V or 3 V A RE R Pulse Generator, 15 µs Duration, 1% Duty Cycle tr, tf ≤ 100 ns 100 Ω ± 1% B D + _ DE 3 V or 0 V NOTE: This test is conducted to test survivability only. Data stability at the R output is not specified. Figure 11. Test Circuit, Transient Over Voltage Test 10 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 Function Tables DRIVER INPUT ENABLE D DE A B H L X Open H H L H H L Z H L H Z L OUTPUTS RECEIVER DIFFERENTIAL INPUTS ENABLE OUTPUT VID = VA − VB VID ≤ −0.2 V −0.2 V < VID < −0.01 V −0.01 V ≤ VID X Open Circuit Short Circuit RE R L L L H L L L ? H Z H H H = high level; L = low level; ? = indeterminate Z = high impedance; X = irrelevant; 11 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS D and RE Inputs DE Input VCC VCC 100 kΩ 1 kΩ 1 kΩ Input Input 100 kΩ 9V 9V A Input B Input VCC VCC 16 V 100 kΩ 16 V R3 R1 R3 Input Input 16 V R2 R1 100 kΩ 16 V A and B Outputs R2 R Output VCC VCC 16 V 5Ω Output Output 9V 16 V SN65HVD10 SN65HVD11 SN65HVD12 12 R1/R2 9 kΩ 36 kΩ 36 kΩ R3 45 kΩ 180 kΩ 180 kΩ www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 TYPICAL CHARACTERISTICS HVD10 OR HVD12 HVD11 RMS SUPPLY CURRENT vs SIGNALING RATE RMS SUPPLY CURRENT vs SIGNALING RATE 70 TA = 25°C RE at VCC DE at VCC RL = 54 Ω CL = 50 pF I CC − RMS Supply Current − mA I CC − RMS Supply Current − mA 70 VCC = 3.6 V 60 50 VCC = 3 V VCC = 3.3 V 40 30 0 5 10 15 20 25 30 35 TA = 25°C RE at VCC DE at VCC 50 VCC = 3 V VCC = 3.3 V 40 2.5 Signaling Rate − Mbps Figure 12 5 7.5 Signaling Rate − Mbps HVD12 HVD10 RMS SUPPLY CURRENT vs SIGNALING RATE BUS INPUT CURRENT vs BUS INPUT VOLTAGE TA = 25°C RE at VCC DE at VCC 300 RL = 54 Ω CL = 50 pF 250 VCC = 3.6 V 60 VCC = 3.3 V 50 10 Figure 13 I I − Bus Input Current − µ A I CC − RMS Supply Current − mA 70 VCC = 3.6 V 60 30 0 40 RL = 54 Ω CL = 50 pF VCC = 3 V 40 TA = 25°C DE at 0 V 200 150 VCC = 0 V 100 50 VCC = 3.3 V 0 −50 −100 −150 30 100 400 700 Signaling Rate − kbps Figure 14 1000 −200 −7 −6−5 −4−3 −2−1 0 1 2 3 4 5 6 7 8 9 10 11 12 VI − Bus Input Voltage − V Figure 15 13 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 HVD11 OR HVD12 HIGH-LEVEL OUTPUT CURRENT vs DRIVER HIGH-LEVEL OUTPUT VOLTAGE BUS INPUT CURRENT vs BUS INPUT VOLTAGE 150 90 I I − Bus Input Current − µ A 70 TA = 25°C DE at 0 V 60 50 IOH − High-Level Output Current − mA 80 VCC = 0 V 40 30 20 10 0 VCC = 3.3 V −10 −20 −30 TA = 25°C DE at VCC D at VCC VCC = 3.3 V 100 50 0 −50 −100 −150 −40 −50 −60 −7−6 −5 −4 −3 −2 −1 0 1 2 3 4 5 6 7 8 9 10 11 12 VI − Bus Input Voltage − V −200 −4 −2 0 2 4 VOH − Driver High-Level Output Voltage − V Figure 16 Figure 17 DRIVER DIFFERENTIAL OUTPUT vs FREE-AIR TEMPERATURE LOW-LEVEL OUTPUT CURRENT vs DRIVER LOW-LEVEL OUTPUT VOLTAGE 200 160 140 2.5 TA = 25°C DE at VCC D at 0 V VCC = 3.3 V 2.4 VOD − Driver Differential Output − V I OL − Low-Level Output Current − mA 180 120 100 80 60 40 20 −2 0 2 4 6 VOL − Driver Low-Level Output Voltage − V Figure 18 14 2.3 VCC = 3.3 V DE at VCC D at VCC 2.2 2.1 2.0 1.9 1.8 1.7 1.6 0 −20 −4 6 8 1.5 −40 −15 10 35 60 TA − Free-Air Temperature − °C Figure 19 85 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 TYPICAL CHARACTERISTICS DRIVER OUTPUT CURRENT vs SUPPLY VOLTAGE −40 TA = 25°C DE at VCC D at VCC RL = 54 Ω I O − Driver Output Current − mA −35 −30 −25 −20 −15 −10 −5 0 0 0.50 1 1.50 2 2.50 3 3.50 VCC − Supply Voltage − V Figure 20 15 www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 APPLICATION INFORMATION RT Stub Device HVD10 HVD11 HVD12 RT Number of Devices on Bus 64 256 256 NOTE: The line should be terminated at both ends with its characteristic impedance (RT = ZO). Stub lengths off the main line should be kept as short as possible. Figure 21. Typical Application Circuit Driver Input Driver Output Receiver Input Receiver Output Figure 22. HVD12 Input and Output Through 2000 Feet of Cable An example application for the HVD12 is illustrated in Figure 21. Two HVD12 transceivers are used to communicate data through a 2000 foot (600 m) length of Commscope 5524 category 5e+ twisted pair cable. The 16 bus is terminated at each end by a 100-Ω resistor, matching the cable characteristic impedance. Figure 22 illustrates operation at a signaling rate of 250 kbps. www.ti.com SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 THERMAL CHARACTERISTICS OF IC PACKAGES qJA (Junction-to-Ambient Thermal Resistance) is defined as the difference in junction temperature to ambient temperature divided by the operating power. qJC (Junction-to-Case Thermal Resistance) is defined as difference in junction temperature to case divided by the operating power. It is measured by putting the mounted package up against a copper block cold plate to force heat to flow from die, through the mold compound into the copper block. θJA is not a constant and is a strong function of: D D D the PCB design (50% variation) altitude (20% variation) device power (5% variation) θJA can be used to compare the thermal performance of packages if the specific test conditions are defined and used. Standardized testing includes specification of PCB construction, test chamber volume, sensor locations, and the thermal characteristics of holding fixtures. θJA is often misused when it is used to calculate junction temperatures for other installations. TI uses two test PCBs as defined by JEDEC specifications. The low-k board gives average in-use condition thermal performance, and it consists of a single copper trace layer 25 mm long and 2-oz thick. The high-k board gives best case in-use condition, and it consists of two 1-oz buried power planes with a single copper trace layer 25 mm long and 2-oz thick. A 4% to 50% difference in θJA can be measured between these two test cards θJC is a useful thermal characteristic when a heatsink is applied to package. It is not a useful characteristic to predict junction temperature because it provides pessimistic numbers if the case temperature is measured in a nonstandard system and junction temperatures are backed out. It can be used with θJB in 1-dimensional thermal simulation of a package system. qJB (Junction-to-Board Thermal Resistance) is defined as the difference in the junction temperature and the PCB temperature at the center of the package (closest to the die) when the PCB is clamped in a cold-plate structure. θJB is only defined for the high-k test card. θJB provides an overall thermal resistance between the die and the PCB. It includes a bit of the PCB thermal resistance (especially for BGA’s with thermal balls) and can be used for simple 1-dimensional network analysis of package system (see Figure 23). Figure 23. Thermal Resistance 17 MECHANICAL DATA MPDI001A – JANUARY 1995 – REVISED JUNE 1999 P (R-PDIP-T8) PLASTIC DUAL-IN-LINE 0.400 (10,60) 0.355 (9,02) 8 5 0.260 (6,60) 0.240 (6,10) 1 4 0.070 (1,78) MAX 0.325 (8,26) 0.300 (7,62) 0.020 (0,51) MIN 0.015 (0,38) Gage Plane 0.200 (5,08) MAX Seating Plane 0.010 (0,25) NOM 0.125 (3,18) MIN 0.100 (2,54) 0.021 (0,53) 0.015 (0,38) 0.430 (10,92) MAX 0.010 (0,25) M 4040082/D 05/98 NOTES: A. All linear dimensions are in inches (millimeters). B. This drawing is subject to change without notice. C. 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