FREESCALE MHVIC2114NR2

Freescale Semiconductor
Technical Data
Document Number: MHVIC2114NR2
Rev. 5, 5/2006
RF LDMOS Wideband Integrated
Power Amplifier
The MHVIC2114NR2 wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS
IC technology and integrates a multi - stage structure. Its wideband On - Chip
matching design makes it usable from 1600 to 2600 MHz. The linearity
performances cover all modulation formats for cellular applications: CDMA and
W - CDMA. The device is in a PFP - 16 flat pack package that provides
excellent thermal performance through a solderable backside contact.
Final Application
• Typical Two - Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 =
204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band
Power Gain — 32 dB
IMD — - 30 dBc
Driver Application
• Typical Single - Channel W - CDMA Performance: VDD = 27 Volts, IDQ1 =
96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz,
3GPP Test Model 1, Measured in 3.84 MHz BW @ 5 MHz Offset, 64
DTCH, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 32 dB
ACPR — - 58 dBc
• P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz
• Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
VGS3
VGS2
VGS1
Quiescent Current
Temperature Compensation
RFin IC
VDS1
VDS2
VDS3/RFout
2100 MHz, 27 V, 23 dBm
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
N.C.
1
16
N.C.
VGS3
2
15
VDS3/RFout
VGS2
3
14
VDS3/RFout
VGS1
4
13
VDS3/RFout
RFin
5
12
VDS3/RFout
RFin
6
11
VDS3/RFout
VDS1
VDS2
7
8
10
9
VDS3/RFout
N.C.
3 Stages IC
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHVIC2114NR2
Figure 2. Pin Connections
MHVIC2114NR2
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Input Power
Pin
5
dBm
Symbol
Value
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Driver Application
(Pout = +0.2 W CW)
Unit
RθJC
°C/W
Stage 1, 27 Vdc, IDQ1 = 96 mA
Stage 2, 27 Vdc, IDQ2 = 204 mA
Stage 3, 27 Vdc, IDQ3 = 111 mA
11.5
7.52
5.52
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
0 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA,
Pout = 23 dBm, 2110- 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
29
32
36
dB
Gain Flatness
GF
—
0.3
0.5
dB
Input Return Loss
IRL
—
- 13
- 10
dB
Adjacent Channel Power Ratio
ACPR
—
- 60
- 57
dBc
Group Delay
Delay
—
1.7
—
ns
—
—
0.2
—
°
Phase Linearity
MHVIC2114NR2
2
RF Device Data
Freescale Semiconductor
16
1
VDS3
VGS3
+
R3
C1
C17
13
4
+
C14
RF
INPUT
C4
+
C13
Z3
RF
OUTPUT
C9
11
VDS1
C21
Z5
12
5
6
VDS2
C20
C15
Z2
Z1
+
C19
Z4
C3
VGS1
R1
C18
+
14
3
+
C5
15
2
C2
VGS2
R2
+
C8
C7
8
C11
C22
10
C6
+
C12
Quiescent Current
Temperature Compensation
7
+
C16
9
C10
Z1
Z2
Z3
Z4
Z5
PCB
0.323″ x .055″ 50 Ω Microstrip
0.196″ x .176″ Microstrip
0.286″ x .055″ Microstrip
0.150″ x .018″ Microstrip
0.363″ x .055″ Microstrip
Arlon, 0.021″, εr = 2.55
Figure 3. MHVIC2114NR2 Test Circuit Schematic
Table 6. MHVIC2114NR2 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5, C8, C12, C14, C19
1 μF Tantalum Chip Capacitors
TAJA105K035R
Kemet
C2, C3, C4, C7, C11, C18
0.01 μF Chip Capacitors
0805C103K5RACTR
Vishay
C6, C10, C17
6.8 pF Chip Capacitors (ACCU - P)
AVX08051J6R8BBT
AVX
C9
1.5 pF Chip Capacitor (ACCU - P)
AVX08051J1R5BBT
AVX
C15, C16
2.2 pF Chip Capacitors (ACCU - P)
AVX08051J2R2BBT
AVX
C22
1.0 pF Chip Capacitor (ACCU - P)
AVX08051J1R0BBT
AVX
C13, C20, C21
330 μF Electrolytic Capacitors
MCR35V337M10X16
Multicomp
R1, R2, R3
1 kW Chip Resistors (0805)
P1.00KCCT- ND
Panasonic
MHVIC2114NR2
RF Device Data
Freescale Semiconductor
3
VGS1
VGS2
R1
R2
R3
VGS3
C14
C5
C2
C1
C3
C4
C15
C22
C9
C16
MHVIC2114R2
C6
Rev 1
C10
C17
C18 C19
C11
C12
C7
VDD2
C8
VDD3
VDD1
C21
C13
C20
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the
Freescale Semiconductor signature/logo. PCBs may have either Motorola or
Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. MHVIC2114NR2 Test Circuit Component Layout
MHVIC2114NR2
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
40
0
S21
30
2.2
2.1
−5
TC = 85_C
2.0
−10
−15
S11
0
−20
−10
−25
S11 (dB)
10
1.9
DELAY, (nSEC)
S21 (dB)
20
1.8
1.7
25_C
1.6
1.5
−30_C
1.4
−20
−30
VDD = 27 Vdc, Pout = 23 dBm CW
1.3
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−30
−35
1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
1.2
2100
2110
2120
2130
2140
2150
2160
f, FEQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. Broadband Frequency Response
Figure 6. Delay versus Frequency
2170
2180
2170
2180
−18
36
TC = −30_C
32
25_C
28
85_C
24
VDD = 27 Vdc, Pout = 23 dBm CW
20
2100
2120
2130
2140
VDD = 27 Vdc, Pout = 23 dBm CW
−17
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−16
TC = 85_C
−15
25_C
−14
−13
−12
−30_C
−11
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
2110
IRL, INPUT RETURN LOSS (dB)
40
G ps , POWER GAIN (dB)
VDD = 27 Vdc, Pout = 23 dBm CW
2150
2160
2170
2180
−10
2100
2110
2120
2130
2140
2150
2160
f, FREQUENCY (MHz)
f, FREQUENCY, (MHz)
Figure 7. Power Gain versus Frequency
Figure 8. Input Return Loss versus Frequency
−10
40
38
−20
TC = −30_C
34
TC = −30_C
25_C
32
30
S21 PHASE(_)
G ps , POWER GAIN (dB)
36
85_C
28
−30
25_C
40
26
24
85_C
−50
VDD = 27 Vdc, f = 2140 MHz
VDD = 27 Vdc, f = 2140 MHz
22
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
20
15
17.5
20
22.5
25
27.5
30
32.5
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−60
35
37.5
40
15
20
25
30
35
40
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 9. Power Gain versus Output Power
Figure 10. S21 Phase versus Output Power
45
MHVIC2114NR2
RF Device Data
Freescale Semiconductor
5
IMD, INTERMODULATION DISTORTION (dBc)
−30
VDD = 27 Vdc
3GPP Test Model 1
64 DPCH
−35
−40
−45
2110 MHz
−50
2170 MHz
−55
2140 MHz
−60
−65
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
−20
−30
VDD = 27 Vdc
Pout = 23 dBm Two−Tone Avg.
Tone Spacing = 100 kHz
IDQ3 = 100 mA
−40
111 mA
122 mA
3rd Order
−50
122 mA
−60
100 mA
111 mA
−70
5th Order
−80
−90
2000
2050
2100
2150
2200
2250
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 11. W - CDMA ACPR versus Output Power
Figure 12. Two - Tone Intermodulation
Distortion Products versus Frequency
−10
−20
3rd Order
−30
5th Order
−40
−50
7th Order
−60
VDD = 27 Vdc, f = 2140 MHz
Pout = 7.5 W, Two−Tone Avg.
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−80
0
10
20
30
40
50
60
70
80
90
100
110
7
6.75
6.5
6.25
6
5.75
5.5
5.25
5
4.75
4.5
4.25
4
3.75
3.5
3.25
3
−40
VBIAS1
VBIAS2
VDD = 27 Vdc, f = 2140 MHz
R1 = R2 = R3 = 1000 Ohms
VBIAS3
−20
0
20
40
60
80
100
T, TEMPERATURE (C)
TONE SPACING (MHz)
Figure 13. Two - Tone Intermodulation Distortion
Products versus Tone Spacing
Figure 14. Fixture Bias versus Temperature
4.5
2
4.4
VGS, IC GATE BIAS VOLTAGE (V)
2300
IGS1 & IGS2
4.3
4.2
1.8
1.6
1.4
4.1
1.2
4
3.9 VGS3
VDD = 27 Vdc, f = 2140 MHz
R1 = R2 = R3 = 1000 Ohms
VGS1 & VGS2 1
0.8
3.8
0.6
3.7
0.4
3.6 IGS3
0.2
3.5
−40 −30 −20 −10
IGS, GATE BIAS CURRENT (A)
−70
VBIAS, FIXTURE BIAS VOLTAGE (V)
IMD, INTERMODULATION DISTORTION (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
TYPICAL CHARACTERISTICS
0
0
10 20 30 40
50 60 70 80 90 100
T, TEMPERATURE (C)
Figure 15. Gate Bias versus Temperature
MHVIC2114NR2
6
RF Device Data
Freescale Semiconductor
f = 2170 MHz
Zload
f = 2110 MHz
f = 2110 MHz
Zin
f = 2170 MHz
Zo = 50 Ω
VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm
Zin
f
MHz
Zin
Ω
Zload
Ω
2110
57.9 - j12.1
1.1 + j2.7
2140
50.6 - j18.9
1.1 + j3.4
2170
42.3 - j21.1
1.2 + j3.7
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 16. Series Equivalent Input and Load Impedance
MHVIC2114NR2
RF Device Data
Freescale Semiconductor
7
NOTES
MHVIC2114NR2
8
RF Device Data
Freescale Semiconductor
NOTES
MHVIC2114NR2
RF Device Data
Freescale Semiconductor
9
NOTES
MHVIC2114NR2
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _
A
E2
1
14 x e
16
D
e/2
D1
8
9
E1
8X
bbb
M
B
BOTTOM VIEW
E
C B
S
ÉÉ
ÇÇÇ
ÇÇÇ
ÉÉ
b1
Y
c
A A2
c1
b
DATUM
PLANE
SEATING
PLANE
H
M
ccc C
q
W
GAUGE
PLANE
W
L
1.000
0.039
DETAIL Y
C A
SECT W - W
L1
C
aaa
A1
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−−
0.600
0_
7_
0.200
0.200
0.100
CASE 978 - 03
ISSUE C
PFP - 16
MHVIC2114NR2
RF Device Data
Freescale Semiconductor
11
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and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free
counterparts. For further information, see http://www.freescale.com or contact your
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical
characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MHVIC2114NR2
Document Number: MHVIC2114NR2
Rev. 5, 5/2006
12
RF Device Data
Freescale Semiconductor