Freescale Semiconductor Advance Information Document Number: MMM6025 Rev. 5.1, 03/2005 MMM6025 Package Information Case 1603-2 9.85 × 9.0 × 1.4 mm HDI (Organic Multi-Chip Module) MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch Ordering Information Device MMM6025 MMM6025R2 1 Introduction The MMM6025 is a 50 Ω Tx Power Amplifier Front-End Module for quad- and tri-band GSM/GPRS handset applications, functioning over the GSM850, EGSM, DCS, and PCS transmit and receive frequency bands. It is compatible with GSM/GPRS Class 12 operating modes. To simplify radio front-end design requirements, power amplification, power coupling, power detection, low pass filtering, and antenna switching functions are integrated into the Power Amplifier Front-End Module. Transmit/receive path and enable functions are controlled through 0/2.8 V logic inputs. Operating Temp. Range Package –20° to 70°C HDI Module –20° to 70°C HDI Module Tape and Reel Contents 1 2 3 4 5 6 7 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Functional Block Diagram . . . . . . . . . . . . . . . 2 Electrical Characteristics . . . . . . . . . . . . . . . 2 RF Specifications . . . . . . . . . . . . . . . . . . . . . . 4 Signal Descriptions . . . . . . . . . . . . . . . . . . . 11 Package Information . . . . . . . . . . . . . . . . . . 14 Product Documentation . . . . . . . . . . . . . . . . 16 This document contains information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2004, 2005. All rights reserved. Functional Block Diagram 2 Functional Block Diagram Figure 1 is a functional block diagram of the quad-band (GSM850, EGSM, DCS, and PCS) power amplifier module. VDD3_HB VDDB_HB, VDD1_HB VDD2_HB RX_CEL RX_GSM MATCH TXIN_HB MATCH PREDRIVER MATCH DRIVER FINAL RX_PCS RX_DCS MMM6025 GSM/GPRS PA MODULE 850/900/1800/1900 MATCH Coupler Harmon ic Filter VAPC EN_TX VREG_2.8 TXIN_LB BIAS CONTROL ANTENNA SP6T MATCH PREDRIVER Coupler DRIVER FINAL MATCH Harmonic Filter MATCH VDDB_LB, VDD1_LB POWER DETECTION MATCH VDD2_LB VDD3_LB VREF VDET EN_DET ANTENNA CONTROL EN_DET_PA EUB_US EN_ANT_TX LOWB_HIGH Figure 1. Functional Block Diagram 3 Electrical Characteristics Table 1. Maximum Ratings Rating Symbol Value Unit Drain Supply Voltages Vdd 7.0 V RF Input Power Pin 11 dBm Operating (Ambient) Temperature Range TA –20 to 70 °C Storage Temperature Tstg –40 to 125 °C Junction Temperature TJ 125 °C Note: Maximum Ratings and ESD 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤ 150 V and Machine Model (MM) ≤ 50 V. Additional ESD data available upon request. MMM6025 Advance Information, Rev. 5.1 2 Freescale Semiconductor Electrical Characteristics Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Vdd 2.8 3.2 4.5 V VRAMP 0.1 - 2.2 V Pin 5 - 11 dBm Symbol Min Typ Max Unit Vdd(TX_off) Vdd(TX_on) 2.8 3.6 3.2 7.0 4.5 PA Output Control Voltage VAPC 0.1 0.2 to 2.1 2.2 V PA Output Control Current IAPC -3.0 - 3.5 mA VEN_DET_PA(H) VEN_DET_PA(L) 2.5 0 - 2.9 0.3 IEN_DET_PA(H) IEN_DET_PA(L) - - 2.0 10 Mode Select Voltage US (selects GSM850 or PCS) EU (selects EGSM or DCS) VEUB_US(H) VEUB_US(L) 2.5 0 - 2.9 0.3 RX Band Select Current Source Sink IEUB_US(H) IEUB_US(L) - - 0.1 10 2.5 0 - 2.9 0.3 IEN_ANT_TX(H) IEN_ANT_TX(L) - - 0.1 10 mA µA Voltage PA 2 (Regulated Supply) VREG28 2.65 - 2.9 V Current Draw IREG28 - - 18 mA VLOWB_HIGH(H) VLOWB_HIGH(L) 2.5 0 - 2.9 0.3 Drain Supply Voltage Power Control Ramp Voltage RF Input Power Table 3. DC Specifications Characteristic Voltage PA I (Drain Supplies) Transmitter Off Transmitter On Detector PA Enable High Low Vdc Voltage1 Vdc Detector PA Enable Current1 Source Sink mA µA Vdc TX Antenna Enable Voltage High Low VEN_ANT_TX(H) VEN_ANT_TX(L) TX Antenna Enable Current Source Sink BAND SELECT High (DCS/PCS Bands Selected) Low (GSM850/EGSM Bands Selected) mA µA Vdc V MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 3 RF Specifications Table 3. DC Specifications (continued) Characteristic BAND SELECT Current Level High Low Symbol Min Typ Max ILOWB_HIGH(H) ILOWB_HIGH(L) - - 10 10 IVdd(off) - 5.0 7.0 Unit µA Total module leakage current (Standby condition) EN_DET_PA = 0.3 V EUB_US = EN_ANT_TX = +0.3 V LOWB_HIGH = 0.3 V VAPC = 0.1 V VREG_IN = 0 V or 2.775 V µA Temp = 23 to 27°C Vdd = 3.8 V 1 The MMM6025 pinout is compatible with that of MMM6022, except pin 8. MMM6025 signal EN_DET_PA (pin 16) is equivalent to a combination of both MMM6022 signals EN_TX and EN_DET. The following table provides additional details on MMM6025 orderable parts. Table 4. Orderable Parts Details 4 Device Operating Temp. Range (TA) MMM6025 –20° to 70°C MMM6025R2 –20° to 70°C RoHS Compliant Pb-Free MSLLevel SolderTemp. HDI Module Yes Yes 3 250 °C HDI Module Tape and Reel Yes Yes 3 250 °C Package RF Specifications This section details specifications for the EGSM, DCS, GSM850, and PCS bands. Table 5. EGSM Band Specifications Characteristic Symbol Min Typ Max Unit EGSM BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = Low, EUB_US = Low, TC = 25°C ±5°C, unless otherwise noted.) Operating Frequency Transmit Receive f MHz 880 925 - 915 960 Power Out Po(max) 33 - - dBm Power Out Low Voltage (Vdd = 2.8 V) Po(min) 32 - - dBm PAE 40 44 - % Po(range) 35 - - dB ∆Vdet/∆VAPC - - 3.0 V/V Power Added Efficiency (Saturated Pout) Power Control Range1 Power Control Slope2 MMM6025 Advance Information, Rev. 5.1 4 Freescale Semiconductor RF Specifications Table 5. EGSM Band Specifications (continued) Characteristic Symbol Min Typ Max Unit PC3dB 1.0 - - MHz tPC - - 1.5 µs ISO1 ISO2 - - -41 -22 dBm VDET(low) VDET(high) 40 1.0 - 150 2.05 mV V 2f0 – 15f0 - - -33 dBm nRX (925 to 935 MHz) - - -73 dBm/ 100 kHz nRX (935 to 960 MHz) - - -84 dBm/ 100 kHz Po_ot(min) 31.5 - - dBm IL_RX - - 1.4 dB ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS 27 27 27 27 - - Input VSWR VSWR - - 2:1 Power Out Change due to Coupling Variations (VSWR = 3:1 @ ANT Port)6 CPLV -1.5 - 1.5 Load Mismatch Stress (Ruggedness)7 Rugg Stability - Spurious Output8 Stab - - -36 dBm Pout_Temp Ambient 1 (Pout = 6 dBm) Pout_Temp Ambient 2 (Pout = 20 dBm) Pout_Temp Ambient 3 (Pout = 33 dBm) -1.5 - 1.5 dB 1.0 - 1.0 dB -0.5 - 0.5 dB Power Control Frequency 3.0 dB BW Power Control Response Time3 Forward Isolation 4 Power Detector Voltage1 Low Power High Power Harmonics5 (Pout Max = 33 dBm) GSM RX Band Noise5 (Vdd = 4.2 V, Saturated Pout) (Pout = 33 dBm) Pout over Temp (Vdd = 2.8 V, TA = -20 to 70°C) Insertion Loss from Antenna to RX_GSM5 Tx - Rx Isolation5 ANTENNA to RX_CEL ANTENNA to RX_GSM ANTENNA to RX_DCS ANTENNA to RX_PCS dB Closed Loop Power Variation over Temperature9 1 2 3 4 5 6 7 dB No performance degradation and no module damage Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. Measured at antenna port, ISO1: Pin = -10 dBm, EN_ANT_TX = 0 V, VAPC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: Pout = 33 dBm Output VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 33dBm. MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 5 RF Specifications 8 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 33dBm. 9 Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF] Table 6. DCS Band Specifications Characteristic Symbol Min Typ Max 1710 1805 - 1785 1880 Unit DCS BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = High, EUB_US = Low, TC = 25°C ±5°C, unless otherwise noted.) Operating Frequency Transmit Receive f MHz Power Out Po(max) 30 - - dBm Power Out Low Voltage (Vdd = 2.8 V) Po(min) 29 - - dBm PAE 28 33 - % Po(range) 35 - - dB ∆Vdet/∆VAPC - - 3.5 V/V PC3dB 1.0 - - MHz tPC - - 1.5 µs ISO1 ISO2 - - -53 -25 dBm VDET(low) VDET(high) 40 1.0 - 150 2.05 mV V 2f0 – 15f0 - - -33 dBm nRX - - -77 dBm/ 100 kHz Po_ot(min) 28.5 - - dBm IL_RX - - 1.7 dB ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS 27 27 27 27 - - Input VSWR VSWR - - 2:1 Power Out Change due to Coupling Variations (VSWR = 3:1 @ ANT Port)7 CPLV -1.5 - 1.5 Load Mismatch Stress (Ruggedness)8 Rugg Power Added Efficiency (Saturated Pout) Power Control Range1 Power Control Slope2 Power Control Frequency 3.0 dB BW Power Control Response Time3 Forward Isolation4 Power Detector Voltage1 Low Power High Power Harmonics6 (Pout Max = 30 dBm) RX Band Noise5,6 (Pout = 30 dBm) Pout over Temp (Vdd = 2.8 V, TA = –20 to 70°C) Insertion Loss from Antenna to RX_DCS6 Tx - Rx Isolation6 ANTENNA to RX_CEL ANTENNA to RX_GSM ANTENNA to RX_DCS ANTENNA to RX_PCS dB dB No performance degradation and no module damage MMM6025 Advance Information, Rev. 5.1 6 Freescale Semiconductor RF Specifications Table 6. DCS Band Specifications (continued) Characteristic Stability - Spurious Output9 Closed Loop Power Variation over Temperature10 Symbol Min Typ Max Unit Stab - - -36 dBm Pout_Temp Ambient 1 (Pout = 3 dBm) Pout_Temp Ambient 2 (Pout = 15 dBm) Pout_Temp Ambient 3 (Pout = 30 dBm) -1.5 - 1.5 dB 1.0 - 1.0 dB -0.5 - 0.5 dB 1 Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C 3 Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. 4 Measured at antenna port: ISO1: Pin = -10 dBm, EN_ANT_TX = 0 V, VAPC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C) 5 DCS RX band = 1805 to 1880 MHz. Vdd = 4.2V, Saturated Pout. 6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C 7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: P out = 30 dBm 8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 30 dBm 9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 30dBm. 10 Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF] 2 Table 7. GSM850 Band Specifications Characteristic Symbol Min Typ Max Unit GSM850 BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = Low, EUB_US = High, TC = 25°C ±5°C, unless otherwise noted.) Operating Frequency Transmit Receive f MHz 824 869 - 849 894 Power Out Po(max) 33 - - dBm Power Out Low Voltage (VCC_PA = 2.8 V) Po(min) 32 - - dBm Power Added Efficiency (Saturated Pout) PAE 38 43 - % Po(range) 35 - - dB ∆Vdet/∆VAPC - - 3.0 V/V PC3dB 1.0 - - MHz tPC - - 1.5 µs ISO1 ISO2 - - -41 -22 dBm Power Control Range1 2 Power Control Slope Power Control Frequency 3.0 dB BW Power Control Response Time Forward Isolation4 3 MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 7 RF Specifications Table 7. GSM850 Band Specifications (continued) Characteristic Symbol Min Typ Max Unit VDET(low) VDET(high) 40 1.0 - 150 2.05 mV V 2f0 – 15f0 - - -33 dBm nRX - - -84 dBm/ 100 kHz Pout over Temp (Vdd = 2.8 V, TA = -20 to 70°C) Po_ot(min) 31.5 - - dBm Insertion Loss from Antenna to RX_GSM8506 IL_RX - - 1.4 dB ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS 27 27 27 27 - - Input VSWR VSWR - - 2:1 Power Out Change due to Coupling Variations (VSWR =3:1 @ ANT Port)7 CPLV -1.5 - 1.5 Load Mismatch Stress (Ruggedness)8 Rugg Stability - Spurious Output9 Stab - - –36 dBm Pout_Temp Ambient 1 Pout = 6 dBm Pout_Temp Ambient 2 Pout = 20 dBm Pout_Temp Ambient 3 Pout = 33 dBm -1.5 dB - 1.5dB dB 1.0 dB - 1.0 dB dB -0.5 dB - 0.5 dB dB Power Detector Voltage1 Low Power High Power Harmonics6 (Pout Max = 33 dBm) GSM850 RX Band Noise5,6 (Pout = 33 dBm) Tx - Rx Isolation6 ANTENNA to RX_CEL ANTENNA to RX_GSM ANTENNA to RX_DCS ANTENNA to RX_PCS dB Closed Loop Power Variation over Temperature10 dB No performance degradation and no module damage 1 Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C 3 Measurement made from 50% of V APC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. 4 Measured at antenna port: ISO1: P = -10 dBm, EN_ANT_TX = 0 V, V in APC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C) 5 GSM850 RX band = 869 to 894 MHz. Vdd = 4.2 V, Saturated P . out 6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C 7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: Pout = 33 dBm 8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 33dBm 9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 33dBm. 10 Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF] 2 MMM6025 Advance Information, Rev. 5.1 8 Freescale Semiconductor RF Specifications Table 8. PCS Band Specifications Characteristic Symbol Min Typ Max Unit PCS BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = High, EUB_US = High, TC = 25°C ±5°C, unless otherwise noted.) Operating Frequency Transmit Receive f MHz 1850 1930 - 1910 1990 Power Out Po(max) 30 - - dBm Power Out Low Voltage (Vdd = 2.8 V) Po(min) 29 - - dBm PAE 28 33 - % Po(range) 35 - - dB ∆Vdet/∆VAPC - - 3.5 V/V PC3dB 1.0 - - MHz tPC - - 1.5 µs ISO1 ISO2 - - -53 -25 dBm VDET(low) VDET(high) 40 1.0 - 150 2.05 mV V 2f0 – 15f0 - - -33 dBm nRX - - -77 dBm/100 kHz Po_ot(min) 28.5 - - dBm IL_RX - - 1.7 dB ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS 27 27 27 27 - - Input VSWR VSWR - - 2:1 Power Out Change due to Coupling Variations (VSWR = 3:1 @ ANT Port)7 CPLV -1.5 - 1.5 Load Mismatch Stress (Ruggedness)8 Rugg No performance degradation or module damage Power Added Efficiency (Saturated Pout) Power Control Range1 Power Control Slope2 Power Control Frequency 3.0 dB BW Power Control Response Time3 Forward Isolation4 Power Detector Voltage1 Low Power High Power Harmonics6 (Pout Max = 30 dBm) RX Band Noise5,6 (Pout = 30 dBm) Pout over Temp (Vdd = 2.8 V, TA = -20 to 70°C) Insertion Loss from Antenna to RX_PCS6 Tx - Rx Isolation6 ANT to RX_CEL ANT to RX_GSM ANT to RX_DCS ANT to RX_PCS dB dB MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 9 RF Specifications Table 8. PCS Band Specifications (continued) Characteristic Stability - Spurious Output9 Closed Loop Power Variation over Temperature10 Symbol Min Typ Max Unit Stab - - -36 dBm Pout_Temp Ambient 1 Pout = 3 dBm Pout_Temp Ambient 2 Pout = 15 dBm Pout_Temp Ambient 3 Pout = 30 dBm -1.5 dB - 1.5dB dB - 1.0 dB dB 1.0 dB -0.5 dB - dB 0.5 dB 1 Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70 °C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70 °C 3 Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. 4 Measured at antenna port, ISO1: P = -10 dBm, EN_ANT_TX = 0 V, V in APC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70 °C) 5 PCS RX band = 1930 to 1990 MHz. Vdd = 4.2 V, Saturated P . out 6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70 °C 7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: P out = 30 dBm 8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 30 dBm 9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or equal to 30dBm. 10 Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF] 2 MMM6025 Advance Information, Rev. 5.1 10 Freescale Semiconductor Signal Descriptions Gnd RX_PCS Gnd RX_DCS VAPC Gnd 1 VDD3_HB Gnd VDD2_HB Signal Descriptions VDDB_HB + VDD1_HB 5 34 33 32 31 30 29 28 27 26 Gnd 2 25 RX_CEL Gnd 3 24 Gnd TXIN_HB 4 23 RX_GSM 22 Gnd MMM6025 (Top View Through Package) Gnd 5 TXIN_LB 6 21 ANT Gnd 7 20 Gnd NC 8 19 EUB_US Gnd 9 18 EN_ANT_TX VDD2_LB VDD3_LB VREG28 14 15 16 17 LOWB_HIGH 13 EN_DET_PA 12 VDET 11 VREF 10 VDDB_LB + VDD1_LB 9.85 mm × 9.0 mm (± 0.1 mm) Figure 2. Pin Out Table 9. Contact Connections Section RF Signal Description Pin(s) TXIN_LB TX Input (Low Bands), DC Blocked 6 TXIN_HB TX Input (High Bands), DC Blocked 4 ANT Antenna 21 RX_GSM RX Output (GSM Band) 23 RX_DCS RX Output (DCS Band) 27 RX_CEL RX Output (CEL Band) 25 RX_PCS RX Output (PCS Band) 29 MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 11 Signal Descriptions Table 9. Contact Connections (continued) Section Supply Control Signal 1 Pin(s) VDDB_LB DC Supply (Battery) for Bias Control (Low Bands) VDD1_LB DC Supply (Battery) for Pre-Driver (Low Bands) VDD2_LB DC Supply (Battery) for Driver Stage (Low Bands) 11 VDD3_LB DC Supply (Battery) for Final Stage (Low Bands) 12 VDDB_HB DC Supply (Battery) for Bias Control (High Bands) 34 VDD1_HB DC Supply (Battery) for Pre-Driver (High Bands) VDD2_HB DC Supply (Battery) for Driver Stage (High Bands) 33 VDD3_HB DC Supply (Battery) for Final Stage (High Bands) 32 VREG28 DC Reference Supply (Regulated) 13 VAPC Analog Power Control 2 LOWB_HIGH Band Select Low (CEL, GSM)/High (DCS,PCS) 17 EN_ANT_TX Enable TX Antenna Switch Path 18 EUB_US Mode Select EU (GSM, DCS)/US (CEL, PCS) 19 EN_DET_PA Enable Detector and Power Amplifier1 16 Detected Output of Detector 15 Reference Output of Detector 14 Power VDET Detection VREF Ground Description Gnd 10 Ground 3, 5, 7, 20, 22, 24, 26, 28, 31, 1, 9, 30 The MMM6025 pinout is compatible with that of MMM6022, except pin 8. MMM6025 signal EN_DET_PA (pin 16) is equivalent to a combination of both MMM6022 signals EN_TX and EN_DET. Table 10. Logic States EUB_US LOWB_HIGH EN_AN_TX Mode Band(s) High Low High TX GSM850 Low Low High TX EGSM Low High High TX DCS High High High TX PCS High Low Low RX GSM850 Low Low Low RX EGSM Low High Low RX DCS High High Low RX PCS MMM6025 Advance Information, Rev. 5.1 12 Freescale Semiconductor Signal Descriptions Figure 3 shows the top view of the MMM6025 demoboard application schematic. VDD3_HB C19 VDD2_HB C8 VDD1_HB C7 C10 C9 RX_PCS C18 C6 RX_DCS 34 33 32 31 30 29 28 27 1 26 2 25 3 24 4 23 C17 VAPC C11 RX_CEL C16 TXIN_HB RX_GSM MMM6025 Top View 5 22 6 21 7 20 8 19 TXIN_LB N.C. ANT EUB_US 9 18 10 11 12 13 14 15 16 17 EN_ANT_TX C1 = C2 = C6 = C7 = 0.1µF C3 = C5 = C8 = C10 = 10µF LOWB_HIGH VDD1_LB EN_DET_PA VDD2_LB VDD3_LB VREG28 C1 C3 C2 C5 C4 C12 C13 C14 C4 = C9 = 1µF C11 = 2.2nF VDET C12 = 0.01µF VREF C13 = 100pF C14 = C16 = C17 = C18 = C19 = 33pF Figure 3. Demoboard Application Schematic MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 13 Package Information 6 Package Information Figure 4 shows the MMM6025 9.85 × 9.0 × 1.4 mm HDI package case outline. Figure 5 on page 15 shows the bottom view. Figure 4. Package Outline MMM6025 Advance Information, Rev. 5.1 14 Freescale Semiconductor Package Information Figure 5. Package Outline—Bottom View MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 15 7 Product Documentation This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com on the documentation page. Table 11 summarizes revisions to this document since the previous release (Rev. 5). Table 11. 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