FREESCALE MW4IC001MR4

Freescale Semiconductor
Technical Data
MW4IC001MR4
Rev. 4, 5/2006
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MW4IC001MR4
The MW4IC001M wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Freescale’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2170 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W - CDMA.
• Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
• High Gain, High Efficiency and High Linearity
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
800 - 2170 MHz, 900 mW, 28 V
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
4.58
0.037
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Value
Unit
RθJC
27.3
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case @ 85°C
ARCHIVE INFORMATION
ARCHIVE INFORMATION
RF LDMOS Wideband Integrated
Power Amplifier
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
0 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC001MR4
12
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 V, ID = 50 μA)
VGS(th)
2
3
5
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 10 mA)
VGS(Q)
2
3.7
5
Vdc
Drain- Source On - Voltage
(VGS = 10 V, ID = 0.05 A)
VDS(on)
—
0.48
0.9
Vdc
Forward Transconductance
(VDS = 10 V, ID = 0.1 A)
gfs
—
0.05
—
S
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
45
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.62
—
pF
Two - Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Gps
—
13
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
ηD
—
29
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IMD
—
- 28
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IRL
—
- 18
—
dB
P1dB
—
0.85
—
W
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
Gps
12
13
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
ηD
35
38
—
%
Input Return Loss
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
IRL
- 10
- 16
—
dB
Off Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Output Power, 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
On Characteristics
MW4IC001MR4
RF Device Data
Freescale Semiconductor
13
VGG
C1
C2
Z6
C7
C6
+
VDD
C8
Z7
R1
Z1
Z2
ARCHIVE INFORMATION
C9
C10
C3
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z3
Z4
R2
Z5
DUT
Z8
Z9
Z10
Z11
L2
Z12
C5
L1
C11
C12
Z13
C13
C4
1.331″
0.126″
0.065″
0.065″
0.680″
1.915″
0.120″
x 0.044″
x 0.076″
x 0.175″
x 0.195″
x 0.145″
x 0.055″
x 0.141″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
PCB
0.062″ x 0.044″ to 0.615″ Taper
0.082″ x 0.615″ Microstrip
0.075″ x 0.044″ Microstrip
0.625″ x 0.044″ Microstrip
1.375″ x 0.044″ Microstrip
Rogers RO4350, 0.020″, εr = 3.5
Figure 1. MW4IC001MR4 900 MHz Test Circuit Schematic
Table 6. MW4IC001MR4 900 MHz Test Circuit Component Designations and Values
Part
RF
OUTPUT
Description
Part Number
Manufacturer
C1, C6
0.1 μF, 100 V Chip Capacitors
C1210C104K5RACTR
Kemet
C2, C3, C5, C7
43 pF, 500 V Chip Capacitors
100B430JP500X
ATC
C4
12 pF, 500 V Chip Capacitor
100B120JP500X
ATC
C8
22 μF, 35 V Tantalum Chip Capacitor
T491X226K035AS
Kemet
C9
4.7 pF, 500 V Chip Capacitor
100B4R7CP500X
ATC
C10, C11
0.6 - 4.5 pF, 500 V Variable Capacitors
27271SL
Johanson
C12
2.7 pF, 500 V Chip Capacitor
100B2R7CP500X
ATC
C13
3.3 pF, 500 V Chip Capacitor
100B3R3CP500X
ATC
L1
5.6 nH Chip Inductor
0805 Series
AVX
L2
10 nH Chip Inductor
1008 Series
ATC
R1
100 W Chip Resistor
CRCW12061001F100
Dale
R2
20 W Chip Resistor
CRCW120620R0F100
Dale
ARCHIVE INFORMATION
RF
INPUT
MW4IC001MR4
14
RF Device Data
Freescale Semiconductor
VGG
C2
C6
C9
C10
ARCHIVE INFORMATION
R1
C3
C4
L1
R2
C8
C7
C12
L2
C5
C11
C13
MW4IC001MR4
900 MHz
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MW4IC001MR4 900 MHz Test Circuit Component Layout
ARCHIVE INFORMATION
C1
V DD
MW4IC001MR4
RF Device Data
Freescale Semiconductor
15
−17
ηD
−19
38
−21
VDS = 28 Vdc
Pout = 0.9 W (PEP)
IDQ = 14 mA
Two −Tone Measurement
100 kHz Tone Spacing
34
30
26
22
−23
−25
−27
−29
IM3
18
−31
Gps
14
10
855
860
−33
865
870
875
880
885
890
895
900
−35
905
f1, FREQUENCY (MHz)
14
60
ηD
55
13
50
12
45
P1dB
11
40
10
35
9
30
8
6
25
VDS = 28 Vdc
IDQ = 14 mA
f = 880 MHz
7
0
0.2
0.4
0.6
0.8
20
1.0
−25
15
1.4
1.2
IMD, INTERMODULATION DISTORTION (dBc)
Gps
ηD, DRAIN EFFICIENCY (%)
15
IDQ = 8 mA
−35
10 mA
18 mA
−40
16 mA
−45
14 mA
Two −Tone Measurement
100 kHz Tone Spacing
12 mA
−50
−55
0.01
0.1
1
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
−25
−30
VDS = 28 Vdc
IDQ = 14 mA
f1 = 880 MHz
f2 = 880.1 MHz
−35
−40
−45
3rd Order
−50
−55
5th Order
−60
−65
Two −Tone Measurement
100 kHz Tone Spacing
7th Order
0.01
0.1
1
10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
VDS = 28 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
Figure 4. CW Performance versus Output
Power
−25
−70
−30
ARCHIVE INFORMATION
42
−15
IRL
46
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
50
Figure 3. Two-Tone Performance versus
Frequency
G ps , POWER GAIN (dB)
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS - 900 MHz
−30
10
−35
−40
10 MHz
−45
1 MHz
Tone
Spacing = 100 kHz
−50
0.01
0.1
VDS = 28 Vdc
IDQ = 14 mA
f1 = 880 MHz,
f2 = f1 + Tone Spacing
Two −Tone Measurement
1
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Third Order Intermodulation
Distortion versus Output Power
10
MW4IC001MR4
16
RF Device Data
Freescale Semiconductor
Z5
VGG
+
Z12
C1
C2
Z4
+
C4
VDD
C6
Z11
R1
RF
INPUT
Z1
Z2
Z3
Z6
Z8
DUT
Z7
Z9
Z13
Z10
RF
OUTPUT
Z15
Z14
C5
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.018″
0.495″
0.893″
1.340″
0.912″
0.241″
0.076″
0.294″
x 0.044″
x 0.296″
x 0.500″
x 0.022″
x 0.022″
x 0.500″
x 0.150″
x 0.150″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.067″ x 0.264″ Microstrip
0.457″ x 0.492″ Microstrip
0.719″ x 0.022″ Microstrip
1.149″ x 0.022″ Microstrip
0.677″ x 0.434″ Microstrip
0.095″ x 0.264″ Microstrip
0.772″ x 0.044″ Microstrip
Rogers RO4350, 0.020″, εr = 3.5
Figure 8. MW4IC001MR4 1990 MHz Test Circuit Schematic
Table 7. MW4IC001MR4 1990 MHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6
22 μF, 35 V Tantalum Capacitors
T491X226K035AS
Kemet
C2, C4
10 pF, 500 V Chip Capacitors
100B100JCA500X
ATC
C3, C5
10 pF, 500 V Chip Capacitor
600S100JW
ATC
C7
0.6 - 4.5 pF, 500 V Variable Capacitor
27271SL
Johanson
R1
1 kW Chip Resistor
CRCW12061021F100
Dale
VDD
VGG
C1
C6
C2
C4
R1
C3
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C7
C5
C7
MW4IC001MR4
1990 MHz
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 9. MW4IC001MR4 1990 MHz Test Circuit Component Layout
MW4IC001MR4
RF Device Data
Freescale Semiconductor
17
35
30
−11
IRL
−14
ηD
−17
−20
25
VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA
Two−Tone Measurement, 100 kHz Tone Spacing
20
15
Gps
10
IMD
−26
−29
−32
5
0
1930
1940
1950
1960
1970
1980
−35
1990
f1, FREQUENCY (MHz)
48
G ps , POWER GAIN (dB)
14.0
13.6
40
13.2
P1dB
32
12.8
VDD = 28 Vdc
IDQ = 12 mA
f = 1990 MHz
24
ηD
0.2 0.3
0.4
0.5 0.6
0.7
0.8 0.9
1.0
16
1.1 1.2 1.3
3rd Order
5th Order
−60
−65
−75
VDD = 28 Vdc
IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
7th Order
−70
−45
16 mA
−50
−55
−60
9.6 mA
12 mA
0.01
VDD = 28 Vdc
f1 = 1990 MHz, f2 = 1990.1 MHz
Two −Tone Measurement
100 kHz Tone Spacing
1
0.1
Figure 12. Intermodulation Distortion versus
Output Power
−40
−55
−40
Figure 11. CW Performance versus Output
Power
−35
−50
IDQ = 20 mA
−35
Pout, OUTPUT POWER (WATTS) PEP
−30
−45
−30
Pout, OUTPUT POWER (WATTS)
0.01
0.1
1
IMD, THIRD ORDER INTERMODULATION (dBc)
12.4
0.1
ηD, DRAIN EFFICIENCY (%)
56
Gps
IMD, INTERMODULATION DISTORTION (dBc)
Figure 10. Two-Tone Performance versus
Frequency
14.4
IMD, INTERMODULATION DISTORTION (dBc)
−23
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
ARCHIVE INFORMATION
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS - 1990 MHz
−30
−35
−40
10 MHz
−45
−50
1 MHz
VDD = 28 Vdc
IDQ = 12 mA
f1 = 1990 MHz
f2 = f1 + Tone Spacing
Two −Tone Measurement
−55
−60
100 kHz
0.01
0.1
OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 13. Intermodulation Distortion
Products versus Output Power
Figure 14. Third Order Intermodulation
Distortion versus Output Power
MW4IC001MR4
18
RF Device Data
Freescale Semiconductor
1
Z5
VGG
+
Z12
C1
C2
Z4
+
C4
VDD
C6
Z11
R1
RF
INPUT
Z1
Z2
Z3
Z6
Z8
DUT
Z7
Z9
Z13
Z10
RF
OUTPUT
Z15
Z14
C5
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.267″
0.058″
0.758″
1.073″
1.361″
0.205″
0.109″
0.210″
x 0.044″
x 0.044″
x 0.256″
x 0.022″
x 0.022″
x 0.332″
x 0.150″
x 0.150″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.106″ x 0.344″ Microstrip
0.783″ x 0.500″ Microstrip
0.847″ x 0.022″ Microstrip
1.055″ x 0.022″ Microstrip
0.291″ x 0.387″ Microstrip
0.050″ x 0.287″ Microstrip
0.950″ x 0.044″ Microstrip
Rogers RO4350, 0.020″, εr = 3.5
Figure 15. MW4IC001MR4 2170 MHz Test Circuit Schematic
Table 8. MW4IC001MR4 2170 MHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6
22 μF, 35 V Tantalum Capacitors
T491X226K035AS
Kemet
C2, C4
10 pF, 500 V Chip Capacitors
100B100JCA500X
ATC
C3, C5
10 pF, 500 V Chip Capacitor
600S100JW
ATC
C7
0.6 - 4.5 pF, 500 V Variable Capacitor
27271SL
Johanson
R1
1 kW Chip Resistor
CRCW12061021F100
Dale
VDD
VGG
C1
C6
C4
C2
R1
C5
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C7
C3
C7
MW4IC001MR4
2170 MHz
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 16. MW4IC001MR4 2170 MHz Test Circuit Component Layout
MW4IC001MR4
RF Device Data
Freescale Semiconductor
19
ηD
VDD = 28 Vdc
Pout = 0.9 W (PEP)
IDQ = 12 mA
Two−Tone Measurement,
100 kHz Tone Spacing
22
17
−18
−23
IMD
−28
Gps
12
2110
2120
2130
2140
2150
−33
2170
2160
f, FREQUENCY (MHz)
Gps
50
13.0
40
12.6
30
12.2
ηD
VDD = 28 Vdc
IDQ = 12mA
f = 2170 MHz
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
−25
−30
−55
−60
−65
−70
20 mA
−35
16 mA
−40
−45
−50
9.6 mA
12 mA
0.01
0.1
1
Figure 18. CW Performance versus Output
Power
Figure 19. Intermodulation Distortion versus
Output Power
VDD = 28 Vdc, IDQ = 12 mA,
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
3rd Order
−45
−50
−30
Pout, OUTPUT POWER (WATTS) PEP
−35
−40
−25
VDD = 28 Vdc
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
IDQ = 7.2 mA
Pout, OUTPUT POWER (WATTS) PEP
IMD,THIRD ORDER INTERMODULATION (dBc)
−20
IMD, INTERMODULATION DISTORTION (dBc)
20
P1dB
11.8
11.4
−20
ηD, DRAIN EFFICIENCY (%)
13.4
60
IMD, INTERMODULATION DISTORTION (dBc)
13.8
5th Order
7th Order
0.01
0.1
Pout, OUTPUT POWER (WATTS) PEP
Figure 20. Intermodulation Distortion
Products versus Output Power
1
−20
−25
−30
−35
VDD = 28 Vdc
IDQ = 12 mA
f1 = 2170 MHz
f2 = f1 + Tone Spacing
Two −Tone Measurement
1 MHz
ARCHIVE INFORMATION
27
−13
IRL
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
32
Figure 17. Two-Tone Performance versus
Frequency
G ps , POWER GAIN (dB)
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS - 2170 MHz
10 MHz
−40
−45
0.01
100 kHz
0.1
Pout, OUTPUT POWER (WATTS) PEP
1
Figure 21. Third Order Intermodulation
Distortion versus Output Power
MW4IC001MR4
20
RF Device Data
Freescale Semiconductor
f = 860 MHz
f = 900 MHz
Zo = 50 Ω
f =860 MHz
Zsource
f = 900 MHz
VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP
f
MHz
Zsource
Ω
Zload
Ω
860
27.853 + j5.908
15.492 + j63.669
865
28.617 + j6.078
15.592 + j68.687
870
29.458 + j6.285
15.788 + j69.799
875
30.306 + j6.422
15.835 + j70.863
880
31.223 + j6.567
15.975 + j71.920
885
32.194 + j6.660
16.094 + j73.091
890
33.228 + j6.656
16.286 + j74.159
895
34.293 + j6.624
16.344 + j75.236
900
35.424 + j6.508
16.628 + j76.283
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance
MW4IC001MR4
RF Device Data
Freescale Semiconductor
21
f = 2180 MHz
Zload
f = 1920 MHz
f = 2100 MHz
f = 2000 MHz
Zload
f = 2180 MHz
f = 2000 MHz
Zsource
Zo = 50 Ω
Zo = 50 Ω
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP
f
MHz
Zsource
Ω
Zload
Ω
f
MHz
Zsource
Ω
Zload
Ω
1920
4.238 + j15.142
7.764 + j28.829
2100
2.667 + j12.903
5.892 + j26.374
1930
4.322 + j15.362
8.056 + j29.352
2110
2.671 + j13.070
6.092 + j26.739
1940
4.490 + j15.466
8.436 + j29.727
2120
2.664 + j13.224
6.281 + j27.094
1950
4.605 + j15.711
8.809 + j30.249
2130
2.694 + j13.431
6.540 + j27.510
1960
4.752 + j15.904
9.183 + j30.763
2140
2.703 + j13.511
6.748 + j27.795
1970
4.905 + j16.050
9.598 + j31.213
2150
2.702 + j13.700
6.996 + j28.182
1980
5.071 + j16.236
10.030 + j31.690
2160
2.745 + j13.952
7.300 + j28.678
1990
5.262 + j16.446
10.546 + j32.237
2170
2.754 + j14.026
7.562 + j28.987
2000
5.487 + j16.632
11.054 + j32.726
2180
2.784 + j14.206
7.862 + j29.411
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 2100 MHz
Zsource
f = 1920 MHz
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 23. Series Equivalent Source and Load Impedance
MW4IC001MR4
22
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MW4IC001MR4
RF Device Data
Freescale Semiconductor
23
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MW4IC001MR4
24
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MW4IC001MR4
RF Device Data
Freescale Semiconductor
25
PACKAGE DIMENSIONS
A
F
3
B
D
1
2
R
L
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
4
N
K
0.35 (0.89) X 45_" 5 _
Q
10_DRAFT
U
H
ZONE V
ÉÉ
ÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
4
ZONE W
C
Y
Y
2
1
3
G
P
S
ZONE X
VIEW Y - Y
STYLE 1:
PIN 1.
2.
3.
4.
CASE 466 - 03
ISSUE C
PLD- 1.5
PLASTIC
DRAIN
GATE
SOURCE
SOURCE
E
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MW4IC001MR4
26
RF Device Data
Freescale Semiconductor
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MW4IC001MR4
MW4IC001MR4
RF Device Data
Rev. 4,
5/2006
Freescale
Semiconductor
27