KODENSHI KK74HCT244A

TECHNICAL DATA
KK74HCT244A
Octal 3-State Noninverting
Buffer/Line Driver/Line Receiver
High-Performance Silicon-Gate CMOS
The KK74HCT244A is identical in pinout to the LS/ALS244. The
device may be used as a level converter for interfacing TTL or NMOS
outputs to High-Speed CMOS inputs.
The KK74HCT244A is an octal noninverting buffer/line driver/line
receiver designed to be used with 3-state memory address drivers, clock
drivers, and other bus-oriented systems. The device has non-inverted
outputs and two active-low output enables.
• TTL/NMOS-Compatible Input Levels
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 4.5 to 5.5 V
• Low Input Current: 1.0 µA
ORDERING INFORMATION
KK74HCT244AN
Plastic
KK74HCT244ADW SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Inputs
PIN 20=VCC
PIN 10 = GND
Outputs
Enable A,
Enable B
A,B
YA,YB
L
L
L
L
H
H
H
X
Z
X=don’t care;Z = high impedance
1
KK74HCT244A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
-0.5 to +7.0
V
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
-1.5 to VCC +1.5
V
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
DC Input Current, per Pin
±20
mA
IOUT
DC Output Current, per Pin
±35
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
750
500
mW
-65 to +150
°C
260
°C
VOUT
IIN
PD
Tstg
TL
**
Power Dissipation in Still Air, Plastic DIP
SOIC Package**
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
**
Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN, VOUT
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
Min
Max
Unit
4.5
5.5
V
0
VCC
V
-55
+125
°C
0
500
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
2
KK74HCT244A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
Guaranteed Limit
Unit
V
25 °C
to
-55°C
≤85
°C
≤125
°C
VIH
Minimum HighLevel Input Voltage
VOUT= VCC-0.1 V
⎢IOUT⎢≤ 20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum Low Level Input Voltage
VOUT=0.1 V
⎢IOUT⎢ ≤ 20 µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
VOH
Minimum HighLevel Output Voltage
VIN=VIH
⎢IOUT⎢ ≤ 20 µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
VIN=VIH
⎢IOUT⎢ ≤ 6.0 mA
4.5
3.98
3.84
3.7
VIN= VIL
⎢IOUT⎢ ≤ 20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
⎢IOUT⎢ ≤6.0 mA
4.5
0.26
0.33
0.4
VOL
Maximum LowLevel Output Voltage
VIN= VIL
V
IIH
Minimum HighLevel Input Leakage
Current
VIN=VCC
5.5
0.1
1.0
1.0
µA
IIL
Maximum LowLevel Input Leakage
Current
VIN=GND
5.5
-0.1
-1.0
-1.0
µA
IOZH
Minimum HighLevel Three-State
Leakage Current
VIN(01) =VIH
VIN(19) =VIH
VIN =VСС (on other
outputs)
VOUT=VCC
5.5
0.5
5.0
10.0
µA
IOZL
Maximum LowLevel Three-State
Leakage Current
VIN(01) =VIH
VIN(19) =VIH
VIN =VСС (on other
outputs)
VOUT=GND
5.5
-0.5
-5.0
-10.0
µA
ICC
Maximum Quiescent
Supply Current
per Package)
VIL=GND
VIN=VCC
IOUT=0 µA
5.5
4.0
40
160
µA
∆ICC
Additional Quiescent
Supply Current
VIN=2.4 V, Any One Input
VIN=VCC or GND, Other
Inputs
≥-55°C
25°C to 125°C
2.9
2.4
IOUT=0µA
5.5
mA
NOTE: Total Supply Current = ICC + Σ∆ICC.
3
KK74HCT244A
AC ELECTRICAL CHARACTERISTICS (VCC =5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)
Symbol
Parameter
Test Conditions
VCC
Guaranteed Limit
В
25 °C
to
-55°C
≤85°C
≤125°
C
Unit
tPLH, tPHL
Maximum Propagation
Delay, A to YA or B to YB
(Figures 1 and 2)
VCC=5 V±10%
VIL=0 V
VIH=3 V
tLH=tHL=6 ns
CL=50 pF
5.0
20
25
30
ns
tPLZ, tPHZ
Maximum Propagation
Delay , Output Enable to
YA or YB (Figures 1 and 2)
VCC=5 V±10%
VIL=0 V
VIH=3 V
tLH=tHL=6 ns
CL=50 pF
5.0
26
33
39
ns
tPZL, tPZH
Maximum Propagation
Delay , Output Enable to
YA or YB (Figures 1 and 2)
VCC=5 V±10%
VIL=0 V
VIH=3 V
tLH=tHL=6 ns
CL=50 pF
5.0
22
28
33
ns
tTLH, tTHL
Maximum Output Transition
Time, Any Output (Figures
1 and 2)
VCC=5 V±10%
VIL=0 V
VIH=3 V
tLH=tHL=6 ns
CL=50 pF
5.0
12
15
18
ns
CIN
Maximum Input Capacitance
VCC=5 V±10%
5.0
10
10
10
pF
COUT
Maximum Three-State
Output Capacitance (Output
in High-Impedance State)
VCC=5 V±10%
5.0
15
15
15
pF
Power Dissipation Capacitance (Per Enabled Output)
CPD
Used to determine the no-load dynamic power
consumption:
PD=CPDVCC2f+ICCVCC
Figure 1. Switching Waveforms
Typical @25°C,VCC=5.0 V
55
pF
Figure 2. Switching Waveforms
4
KK74HCT244A
Figure 3. Test Circuit
Figure 4. Test Circuit
EXPANDED LOGIC DIAGRAM
(1/8 of the Device)
5
KK74HCT244A
N SUFFIX PLASTIC DIP
(MS - 001AD)
A
Dimension, mm
11
20
B
1
10
Symbol
MIN
MAX
A
24.89
26.92
B
6.1
7.11
5.33
C
F
L
C
-T- SEATING
PLANE
N
D
0.36
0.56
F
1.14
1.78
G
2.54
H
7.62
J
0°
10°
K
2.92
3.81
0.25 (0.010) M T
L
7.62
8.26
1. Dimensions “A”, “B” do not include mold flash or protrusions.
M
0.2
0.36
N
0.38
G
K
M
H
D
NOTES:
J
Maximum mold flash or protrusions 0.25 mm (0.010) per side.
D SUFFIX SOIC
(MS - 013AC)
A
20
11
H
Dimension, mm
B
1
P
10
G
R x 45
C
-TK
D
SEATING
PLANE
J
0.25 (0.010) M T C M
F
M
Symbol
MIN
MAX
A
12.6
13
B
7.4
7.6
C
2.35
2.65
D
0.33
0.51
F
0.4
1.27
G
1.27
H
9.53
J
0°
8°
1. Dimensions A and B do not include mold flash or protrusion.
K
0.1
0.3
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side
M
0.23
0.32
P
10
10.65
R
0.25
0.75
NOTES:
for A; for B ‑ 0.25 mm (0.010) per side.
6