MG800J2YS50A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ Compact IGBT Series Module 800 Amperes/600 Volts A D H J K DETAIL "A" C2E1 E2 C1 B E F M W F G G #110 TAB (8 PLACES) X (4 PLACES) N Y (3 PLACES) U C Q T P R TH1 TH2 V L S TH1 FO1 C1 E1 V V G1 TH2 L FO2 G1 E2 FO1 G2 E1 V V E1/C2 DETAIL "A" G2 FO2 E2 E2 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M 7/05 Inches 4.92±0.04 3.78±0.04 0.84±0.04 4.49±0.03 3.30±0.03 0.86±0.04 1.46±0.04 0.75±0.04 0.71±0.04 0.73±0.04 0.59±0.04 3.66±0.03 Millimeters 125.0±1.0 96.0±1.0 21.3±1.0 113.0±0.8 84.0±0.8 22.0±1.0 37.0±1.0 19.0±1.0 18.0±1.0 18.6±1.0 15.0±1.0 93.0±0.8 Dimensions Inches Millimeters N 0.07±0.04 1.8±1.0 P 1.24±0.04 31.5±1.0 Q 0.40±0.03 10.2±0.8 R 0.34±0.03 8.7±0.8 S 4.92±0.04 125.0±1.0 T 1.24-0.01/+0.04 31.5+2.0/-0.8 U 1.81±0.04 46.0±1.0 V 0.22±0.04 5.6±1.0 W 0.63±0.03 16.0±0.8 X 0.21 Dia. 5.5 Dia. Y M8 Metric M8 Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Over-Current and Over-Temperature Protection £ Low VCE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG800J2YS50A is a 600V (VCES), 800 Ampere Dual IGBTMOD™ Compact IGBT Series Module. Type Current Rating Amperes VCES Volts (x 10) MG 800 60 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG800J2YS50A Dual IGBTMOD™ Compact IGBT Series Module 800 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol MG800J2YS50A Units Collector-Emitter Voltage VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts IC 800 Amperes Collector Current (DC) Forward Current (DC) IF 800 Amperes Collector Dissipation (TC = 25°C) PC 2900 Watts Power Device Junction Temperature Tj -20 to 150 °C Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 27 in-lb Mounting Torque, M8 Main Terminal Screws — 88 in-lb — 680 Grams VISO 2500 Volts Storage Temperature Module Weight (Typical) Isolation Voltage, AC 1 minute, 60Hz Sinusoidal Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Gate Leakage Current IGES VGE = ±20V, VCE = 0V — — ±10 µA Collector Cutoff Current ICES VCE = 600V, VGE = 0V — — 1.0 mA Gate-Emitter Cutoff Voltage VGE(off) IC = 800mA,VCE = 5V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) VGE = 15V, IC = 800A, Tj = 25°C — 2.4 3.0 Volts VGE = 15V, IC = 800A, Tj = 125°C — 2.6 3.3 Volts VCE = 10V, VGE = 0V, f = 1MHz — 93000 — pF Input Capacitance Cies Gate-Emitter Voltage VGE 13.0 15.0 17.0 Volts Gate Resistance RG 4.7 — 15.0 Ω td(on) — 0.3 — µs tr — 0.25 — µs Inductive Load Switching Times Forward Voltage Reverse Recovery Time Junction to Case Thermal Resistance RTC Operating Current 2 Units ton VCC = 300V, IC = 800A, — 0.55 — µs td(off) VGE = ±15V, RG = 4.7Ω — 0.85 — µs tf — 0.15 0.3 µs toff — 1.05 — µs IF = 800A, VGE = -10V, Tj = 25°C — 2.3 3.0 Volts IF = 800A, VGE = -10V, Tj = 125°C — 2.1 — Volts VF trr IF = 800A, VGE = -10V, di/dt = 2000A/µs — — 0.5 µs Rth(j-c)Q IGBT (Per 1/2 Module) — — 0.043 °C/Watt Rth(j-c)D FWDi (Per 1/2 Module) — — 0.056 °C/Watt Irtc Tj = 25°C 1600 — — Amperes 7/05 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG800J2YS50A Dual IGBTMOD™ Compact IGBT Series Module 800 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 1800 1800 1500 1500 VGE = 20V 1200 12V 900 10V VGE = 20V 12V 1200 600 9V 300 900 10V 600 9V 300 0 1 2 3 4 0 5 1 2 3 4 0 5 0 1 2 3 4 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 8 IC = 1600A 6 IC = 400A IC = 800A 4 2 0 5 10 15 Tj = 125°C 1200 8 IC = 1600A 6 IC = 400A IC = 800A 4 2 0 5 10 15 900 600 300 0 20 0 4 8 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) TURN-OFF TIME VS. COLLECTOR CURRENT (TYPICAL) TURN-ON TIME VS. COLLECTOR CURRENT (TYPICAL) TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) 300 600 COLLECTOR CURRENT, IC, (AMPERES) 900 VCC = 300V VGE = ±15V RG = 4.7Ω Tj = 25°C Tj = 125°C SWITCHING TIME, td(off), (µs) VCC = 300V VGE = ±15V RG = 4.7Ω Tj = 25°C Tj = 125°C SWITCHING TIME, ton, (µs) 103 103 102 16 104 104 0 VCE = 5V Tj = 25°C Tj = 125°C 1500 10 0 20 COLLECTOR CURRENT, IC, (AMPERES) 10 5 1800 12 Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 FORWARD VOLTAGE, VF, (VOLTS) 104 SWITCHING TIME, toff, (µs) VGE = 0V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 0 7/05 300 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 12 102 600 8V 8V 0 900 15V Tj = 125°C 15V COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25°C FREE-WHEEL CHARACTERISTICS (TYPICAL) FORWARD CURRENT, IF, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 300 600 COLLECTOR CURRENT, IC, (AMPERES) 900 VCC = 300V VGE = ±15V RG = 4.7Ω Tj = 25°C Tj = 125°C 103 102 0 300 600 900 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG800J2YS50A Dual IGBTMOD™ Compact IGBT Series Module 800 Amperes/600 Volts TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) 103 103 0 300 600 600 101 900 600 900 TURN-ON TIME VS. GATE RESISTANCE (TYPICAL) TURN-OFF DELAY TIME VS. GATE RESISTANCE (TYPICAL) 4 6 8 10 12 14 103 102 16 104 VCC = 300V VGE = ±15V IC = 800A Tj = 25°C Tj = 125°C 2 4 6 8 10 12 14 103 VCC = 300V VGE = ±15V IC = 800A Tj = 25°C Tj = 125°C 102 16 2 4 6 8 10 12 GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) TURN-ON DELAY TIME VS. GATE RESISTANCE (TYPICAL) FALL TIME VS. GATE RESISTANCE (TYPICAL) RISE TIME VS. GATE RESISTANCE (TYPICAL) 104 104 SWITCHING TIME, tf, (µs) VCC = 300V VGE = ±15V IC = 800A Tj = 25°C Tj = 125°C 103 4 SWITCHING TIME, td(off), (µs) VCC = 300V VGE = ±15V IC = 800A Tj = 25°C Tj = 125°C 2 300 TURN-OFF TIME VS. GATE RESISTANCE (TYPICAL) 104 2 0 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, ton, (µs) SWITCHING TIME, toff, (µs) SWITCHING TIME, td(on), (µs) 300 VCC = 300V VGE = ±15V RG = 4.7Ω Tj = 25°C Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) 104 6 8 10 12 GATE RESISTANCE, RG, (Ω) 4 0 102 COLLECTOR CURRENT, IC, (AMPERES) 103 102 VCC = 300V VGE = ±15V RG = 4.7Ω Tj = 25°C Tj = 125°C 101 900 104 102 102 14 16 VCC = 300V VGE = ±15V IC = 800A Tj = 25°C Tj = 125°C SWITCHING TIME, tr, (µs) 102 103 SWITCHING TIME, tr, (µs) VCC = 300V VGE = ±15V RG = 4.7Ω Tj = 25°C Tj = 125°C SWITCHING TIME, tf, (µs) SWITCHING TIME, td(on), (µs) 104 RISE TIME VS. COLLECTOR CURRENT (TYPICAL) 103 102 4 6 8 10 12 GATE RESISTANCE, RG, (Ω) 14 16 16 14 16 VCC = 300V VGE = ±15V IC = 800A Tj = 25°C Tj = 125°C 103 102 2 14 2 4 6 8 10 12 GATE RESISTANCE, RG, (Ω) 7/05 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG800J2YS50A Dual IGBTMOD™ Compact IGBT Series Module 800 Amperes/600 Volts SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) 104 102 101 VCC = 300V VGE = ±15V RG = 4.7Ω Tj = 25°C Tj = 125°C 300 600 101 100 900 0 COLLECTOR CURRENT, IC, (AMPERES) 6 8 10 12 14 16 0 200 400 600 REVERSE RECOVERY LOSS VS. FORWARD CURRENT (TYPICAL ) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 200 400 600 FORWARD CURRENT, IF, (AMPERES) 7/05 VCC = 300V VGE = ±15V di/dt = 2000A/µs Tj = 25°C Tj = 125°C FORWARD CURRENT, IF, (AMPERES) 101 800 6 8 10 12 14 16 REVERSE RECOVERY TIME (TYPICAL) 102 101 4 103 103 GATE RESISTANCE, RG, (Ω) VCC = 300V VGE = -10V di/dt = 2000A/µs Tj = 25°C Tj = 125°C 0 2 GATE RESISTANCE, RG, (Ω) 0 200 400 600 800 FORWARD CURRENT, IF, (AMPERES) REVERSE BIAS SAFE OPERATION AREA (TYPICAL) Cies 104 Coes 102 00 VCC = 300V VGE = ±15V di/dt = 2000A/µs Tj = 25°C Tj = 125°C 104 105 103 102 101 800 106 102 100 102 900 COLLECTOR CURRENT, IiC, (AMPERES) REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE) REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 300V VGE = ±15V IC = 800A Tj = 25°C Tj = 125°C CAPACITANCE, Cies, Coes, Cres, (pF) SWITCHING LOSS, Eon, (mJ/PULSE) 103 4 VCC = 300V VGE = ±15V IC = 800A Tj = 25°C Tj = 125°C REVERSE RECOVERY CURRENT (TYPICAL) 104 2 600 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) 102 300 REVERSE RECOVERY TIME, trr, (ns) 0 VCC = 300V VGE = ±15V RG = 4.7Ω Tj = 25°C Tj = 125°C SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, (mJ/PULSE) SWITCHING LOSS, Eoff, (mJ/PULSE) 102 100 SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) VGE = 0V f = 1MHz Tj = 25°C 100 Cres 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 101 100 VGE = ±15V RG = 4.7Ω Tj ≤ 125°C 0 200 400 600 800 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 5 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG800J2YS50A Dual IGBTMOD™ Compact IGBT Series Module 800 Amperes/600 Volts GATE-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL) 104 16 300 200 100 0 IC = 400A RL = 0.375Ω Tj = 25°C 0 1000 2000 3000 200V 300V 8 100V 4 0 4000 VCE = 0V 12 IC = 400A RL = 0.375Ω Tj = 25°C 0 1000 GATE CHARGE, QG, (nC) 3000 4000 103 102 101 00 VCC = 300V tW ≤ 10µs Tj ≤ 125°C 0 200 400 600 800 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 100 100 TC = 25°C TRANSIENT IMPEDANCE, Rth(j-c) TC = 25°C TRANSIENT IMPEDANCE, Rth(j-c) 2000 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-1 10-2 10-3 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.043°C/W 10-4 10-3 10-2 10-1 TIME, (s) 6 SHORT CIRCUIT SAFE OPERATING AREA (TYPICAL) COLLECTOR CURRENT, IiC, (AMPERES) 400 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL) 100 101 10-1 10-2 10-3 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.056°C/W 10-4 10-3 10-2 10-1 100 101 TIME, (s) 7/05