MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0909A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power P1dB=38.0dBm(TYP.) @f=2.3GHz GLp=11.0dB(TYP.) 4.4+0/-0.3 • High power gain @f=2.3GHz • High power added efficiency @f=2.3GHz,P1dB ② • Hermetic Package φ2.2 0.6±0.2 APPLICATION ② 2MIN ηadd=45%(TYP.) ③ • For L/S Band power amplifiers QUALITY • GG 5.0 • Ids=1.3A • Rg=100Ω 1.65 • Vds=10V 0.1 RECOMMENDED BIAS CONDITIONS Absolute maximum ratings Symbol 14.0 (Ta=25°C) Parameter 1.9±0.4 Ratings Unit VGSO Gate to sourcebreakdown voltage -15 V VGDO Gate to drain breakdown voltage -15 V ID Drain current 5 A IGR Reverse gate current -15 mA IGF Forward gate current 31.5 mA PT Total power dissipation 27.3 W Tch Cannel temperature 175 °C Tstg Storage temperature -65 to +175 °C Electrical characteristics Symbol 0.65 9.0±0.2 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-7 (Ta=25°C) Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS=3V,VGS=0V - -- 5.0 A VGS(off) Gate to source cut-off voltage VDS=3V,ID=10mA -2.0 - -5.0 V gm Transconductance VDS=3V,ID=1.3A - 1.5 - S P1dB Output power 1dB Compression P VDS=10V,ID=1.3A,f=2.3GHz 37.0 38.0 - dBm ηadd Power added Efficiency *1 *1:Po=P1dB - 45 - % GLP Linear Power Gain *2 10.0 11.0 - dB Rth(ch-c) Thermal Resistance *1 - - 9 °C/W *1:Channel to case / *2:Pi=22dBm ∆Vf Method Above parameters, ratings, limits are subject to change. Mitsubishi Electric June/2004 MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C TC=25deg TC=75deg 45 90 40 80 35 70 Po 30 60 25 50 GLP(dB) PAE 20 40 15 30 PAE (%) Pout(dBm) TC=0deg TC=50deg GP 10 20 5 10 0 0 0 10 20 Pin (dBm) 30 40 Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0909A L & S BAND GaAs FET [ non – matched ] Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. 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