MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band amplifiers. Unit:millimeters 17.5 FEATURES 1 1.0 • Class A operation • High output power P1dB=41dBm(TYP) @2.3GHz 2-R1.25 • High power gain GLP=11dB(TYP) 2 @2.3GHz 2 • High power added efficiency ηadd=40%(TYP) 3 @2.3GHz,P1dB 14.3 • Hermetically sealed metal-ceramic package with ceramic lid 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE • IG 10.0 RECOMMENDED BIAS CONDITIONS • VDS=10V 1 GATE • ID=2.6A 2 SOURCE(FLANGE) • Rg=50Ω 3 DRAIN GF-21 • Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings *1 -15 -15 10 30 63 37.5 175 -65 to +175 Unit V V A mA mA W ˚C ˚C *1:TC=25˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol IDSS gm Parameter VGS(off) Saturated drain current Transconductance Gate to source cut-off voltage P1dB Output power at 1dB gain compression GLP ηadd Rth(ch-c) VDS=3V,VGS=0V VDS=3V,ID=2.6A VDS=3V,ID=20mA Test conditions VDS=10V,ID Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 ∆Vf method 2.6A,f=2.3GHz Min – – -2 Limits Typ – Unit 3.0 – Max 10 – -5 40 41 – dBm 10 – – 11 40 – – – 4.0 dB % ˚C/W A S V *1:Channel to case *2:Pin=25dBm Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS ID vs. VGS ID vs. VDS 12 12 VDS=3V Ta=25˚C VGS=-0.5V/Step Ta=25˚C VGS=0V 8 8 4 4 0 -3 -1 -2 0 0 1 0 2 3 4 6 5 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & ηadd vs. Pin (f=2.3GHz) GLP,P1dB, ID and ηadd vs. VDS (f=2.3GHz) 45 Gp=11 10 9 dB VDS=10V ID=2.6A 13 ID=2.6A GLP 12 11 40 10 PO 41 P1dB 35 39 30 ηadd 25 0 20 25 30 35 INPUT POWER Pin(dBm) 50 40 30 20 10 0 37 ηadd 40 20 6 8 10 VDS(V) Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90˚ +j50 +j25 +j100 3.0GHz +j250 +j10 3.0GHz 3.0GHz 0 S11 S22 0.5GHz S12 S21 25 50 100 250 ±180˚ 5 4 3 2 I S 21 I 3.0GHz 0.5GHz 1 0 0˚ 0.5GHz 0.5GHz -j250 -j10 0.1 -j25 -j100 -j50 Ta=25˚C VDS=10V ID=2.6A 0.2 -90˚ S PARAMETERS (Ta=25˚C,VDS=10V,ID=2.6A) Freq. (GHz) Magn. 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 0.986 0.985 0.984 0.983 0.982 0.981 0.980 0.979 0.978 0.976 0.975 0.974 0.973 0.972 0.971 0.970 0.969 0.968 0.967 0.966 0.965 0.965 0.964 0.963 0.962 0.961 S11 Angle(deg.) -167.3 -171.3 -174.3 -175.5 -172.1 -173.9 -175.3 -176.3 -176.9 -177.9 -178.2 -179.3 -179.8 179.5 178.6 176.7 175.9 175.1 174.1 173.1 172.3 171.2 170.2 168.7 167.6 166.3 Magn. 2.046 1.833 1.515 1.356 1.233 1.128 1.033 0.970 0.919 0.878 0.845 0.811 0.788 0.771 0.754 0.653 0.638 0.638 0.635 0.625 0.628 0.634 0.635 0.646 0.642 0.651 S21 Angle(deg.) 91.2 87.9 86.1 83.6 84.0 81.1 79.7 77.8 75.8 73.6 71.6 69.4 67.8 65.8 64.1 63.1 60.9 59.0 56.3 54.2 52.3 51.3 48.9 46.3 44.0 41.0 Magn. 0.008 0.010 0.011 0.012 0.013 0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.020 0.022 0.023 0.023 0.023 0.024 0.025 0.025 0.027 0.027 0.028 0.029 0.029 S12 Angle(deg.) 44.1 44.2 44.6 44.9 45.3 45.8 46.4 46.8 47.0 47.3 47.6 48.0 48.4 48.9 49.2 49.6 49.9 50.4 50.7 51.0 51.2 51.6 51.9 52.3 52.5 52.7 Magn. 0.913 0.911 0.909 0.907 0.904 0.902 0.898 0.895 0.889 0.883 0.875 0.865 0.858 0.850 0.843 0.837 0.833 0.829 0.826 0.823 0.820 0.818 0.816 0.814 0.812 0.811 S22 Angle(deg.) -178.6 -179.9 178.6 178.2 177.7 176.6 175.7 176.6 176.0 175.6 175.2 175.0 174.6 173.6 173.4 172.6 174.1 173.6 172.9 171.0 170.3 168.8 167.1 165.7 164.6 162.7 Mitsubishi Electric K MSG/MAG (dB) 0.515 0.567 0.583 0.675 0.683 0.713 0.736 0.785 0.815 0.835 0.900 0.951 0.989 1.011 1.050 1.149 1.170 1.221 1.242 1.256 1.267 1.292 1.315 1.327 1.366 1.412 23.1 22.7 21.8 21.2 20.3 19.6 19.3 18.7 18.2 17.5 17.1 16.8 15.8 14.7 14.1 13.9 13.7 12.7 12.3 11.9 11.6 11.4 11.0 10.1 9.8 9.4 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0911A L, S BAND POWER GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. 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