MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm • High power gain Gp=13dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=48%(TYP.) @f=1.9GHz,Pin=18dBm • Hermetic Package APPLICATION • For UHF Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=200mA Delivery • Rg=500Ω -01:Tape & Reel(1K), -03:Trai(50pcs) Absolute maximum ratings Symbol (Ta=25°C) Ratings Unit VGSO Gate to sourcebreakdown voltage Parameter -15 V VGDO Gate to drain breakdown voltage -15 V ID Drain current 800 mA IGR Reverse gate current -2.5 mA IGF Forward gate current 5.4 mA PT Total power dissipation 5.0 W Tch Cannel temperature 175 °C Tstg Storage temperature -65 to +175 °C Electrical characteristics Symbol (Ta=25°C) Parameter Test conditions Limits Unit Min. Typ. Max. 400 550 800 mA IDSS Saturated drain current VDS=3V,VGS=0V VGS(off) Gate to source cut-off voltage VDS=3V,ID=2.5mA -1 -3 -5 V gm Transconductance VDS=3V,ID=300mA - 200 - mS Po Output power VDS=10V,ID=200mA,f=1.9GHz 29.5 31 - dBm ηadd Power added Efficiency Pin=18dBm - 48 - % GLP Linear Power Gain VDS=10V,ID=200mA,f=1.9GHz 11 13 - dB NF Noise figure - 2.0 - dB Rth(ch-c) Thermal Resistance *1 - 20 30 °C/W *1:Channel to case / ∆Vf Method Above parameters, ratings, limits are subject to change. Mitsubishi Electric June/2004 MGF0913A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 35 70 Vds=10V Ids(off)=200mA f=1.9GHz Gp(dB) ,Po(dBm) 25 60 Po 50 20 40 PAE Gp 15 30 10 20 5 10 0 PAE(%) 30 0 0 5 10 15 20 25 Pin(dBm) IM3,Po(SCL) vs. Pi(SCL) 40 10 VD=10V ID=200mA f1=1.90GHz f2=1.91GHz Po(SCL) (dBm) 20 0 Po -10 10 -20 0 -30 -10 -40 IM3 -20 -50 -30 -60 -40 -70 -50 -80 -15 -10 -5 0 IM3 (dBc) 30 5 10 15 20 Pi(SCL) (dBm) Mitsubishi Electric June/2004 MGF0913A freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200 S PARAMETERS (Ta=25°C,VD=10V,ID=200mA, Reference Plane see Fig.1) S11 (mag) 0.846 0.795 0.758 0.733 0.713 0.696 0.675 0.648 0.611 0.563 0.504 0.437 0.367 0.304 0.260 0.252 0.298 0.376 0.486 0.622 0.762 0.864 0.931 0.969 0.985 0.988 0.986 0.984 0.983 0.977 S21 (ang) -99.11 -129.78 -147.40 -159.19 -168.29 -175.89 177.02 170.52 165.48 159.35 150.60 138.53 123.05 104.53 83.65 61.24 38.21 15.46 -6.26 -26.32 -44.27 -59.90 -73.16 -84.19 -93.24 -100.63 -106.66 -111.48 -115.02 -116.79 (mag) 7.877 5.523 4.105 3.265 2.755 2.413 2.150 1.930 1.751 1.626 1.566 1.563 1.571 1.507 1.422 1.370 1.336 1.290 1.213 1.103 0.963 0.804 0.640 0.487 0.359 0.264 0.207 0.179 0.161 0.119 S12 (ang) 113.45 91.49 74.02 59.68 47.38 36.27 25.69 15.19 4.44 -6.74 -18.46 -30.74 -43.58 -56.94 -70.83 -85.27 -100.37 -116.34 -133.51 -152.37 -173.58 167.54 150.86 136.98 125.65 116.52 109.19 103.32 98.69 95.29 (mag) 0.032 0.038 0.043 0.046 0.049 0.053 0.057 0.063 0.070 0.079 0.091 0.104 0.118 0.134 0.151 0.168 0.185 0.202 0.217 0.227 0.221 0.201 0.175 0.150 0.129 0.112 0.099 0.089 0.080 0.071 S22 (ang) 41.63 29.94 23.18 19.12 16.24 13.56 10.50 6.75 2.20 -3.15 -9.28 -16.17 -23.85 -32.41 -41.99 -52.79 -65.01 -78.79 -94.17 -110.98 -128.75 -146.58 -163.02 -175.89 173.23 163.85 155.65 148.28 141.70 136.14 (mag) 0.241 0.296 0.335 0.372 0.412 0.456 0.500 0.537 0.565 0.582 0.592 0.606 0.614 0.616 0.613 0.599 0.568 0.521 0.469 0.444 0.503 0.605 0.708 0.789 0.844 0.877 0.898 0.916 0.933 0.939 (ang) -112.66 -126.47 -132.57 -135.16 -136.52 -137.70 -138.96 -140.26 -141.48 -142.64 -143.97 -145.86 -148.72 -152.68 -157.29 -160.95 -161.71 -160.65 -154.18 -141.91 -128.51 -122.63 -124.22 -128.49 -134.30 -140.83 -147.37 -153.31 -158.19 -161.64 K MAG/MSG 0.45 0.68 0.92 1.14 1.29 1.34 1.39 1.41 1.47 1.53 1.53 1.45 1.38 1.35 1.34 1.30 1.25 1.20 1.18 1.13 1.09 1.06 1.01 0.95 0.92 0.93 0.97 0.99 1.00 1.12 (dB) 23.91 21.62 19.80 16.26 14.27 13.08 12.05 11.04 9.91 8.84 8.08 7.78 7.57 6.95 6.26 5.82 5.60 5.32 4.94 4.65 4.60 4.56 5.05 5.11 4.45 3.72 3.20 3.03 3.04 0.17 2.0 Gate Mark Round corner 0.8 0.80 Gate Mark (1) (1) (3) 2.8 1.20 4.20 Reference Plane Reference Plane (2) (2) 0.6 0.25 4.00 0.3 2.5 (1) Gate (2) Drain (3) Source BACK SIDE PATTERN (Unit:mm) Fig.1 OUTLINE DRAWING Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. 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