June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. FEATURES Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 11.5dB (Typ.) MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=7.5mA ORDERING INFORMATION Tape & reel 3000pcs./reel ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammble material or (iii) prevention against any malfunction or mishap. (Ta=25°C ) Ratings Unit -4 -4 V V IDSS mA 50 125 -55 to +125 mW °C °C (Ta=25°C ) Test conditions Limits Unit MIN. -3 TYP. -- MAX -- V Gate to drain breakdown voltage IG=-10µA Gate to source leakage current VGS=-2V,VDS=0V VGS=0V,VDS=2V -10 --- 50 60 µA mA Associated gain VDS=2V,ID=500µA VDS=2V, -0.1 10.0 -11.5 -1.5 -- V dB Minimum noise figure ID=7.5mA,f=12GHz -- 0.6 0.8 dB Saturated drain current Gate to source cut-off voltage MITSUBISHI (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 2.10 ±0.1 1.25 0.65 ±0.1 ±0.1 1.25 Top 2.05 0.30 0.60 +0.1 -0.05 0.30 +0.1 0.40 -0.05 ② ③ ① ② +0.1 -0.05 0.30 0.65 +0.05 +0.1 -0.05 0.11 -0 0.65 0.49 ±0.05 1.30 Side ① (0.85) ② Bottom ③ ② Unit: mm ① Gate ② Source ③ Drain Wide lead is Drain. (GD-30) MITSUBISHI (2/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS (VGS=~0.1V/STEP) 50 40 30 20 10 0 0 1 2 3 (VDS=2V) 50 Drain Current, ID(mA) Drain Current, ID(mA) ID vs. VGS 40 30 20 10 0 -1.0 4 Drain to Source voltage, VDS(V) -0.5 0.0 Gate to Souce voltage, VGS(V) NF & Gs vs. ID 15 2 14 Gs 1.8 13 1.6 12 1.4 11 1.2 10 1 9 0.8 8 NF 0.6 7 0.4 6 0.2 5 0 Associated Gain, Gs (dB) Noise Figure, NF (dB) (f=12GHz, VDS=2V) 2.2 4 0 5 10 15 20 Drain Current, ID (mA) MITSUBISHI (3/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S Parameters (Conditions: VDS=2V, ID=7.5mA, Ta=25°C) S11 Freq. f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 S21 S12 S22 Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) 0.997 0.992 0.919 0.850 0.779 0.700 0.645 0.574 0.509 0.475 0.480 0.488 0.507 0.513 -14.6 -30.0 -44.7 -59.1 -74.9 -94.1 -105.9 -122.0 -142.8 -165.1 175.2 157.4 142.1 126.2 4.101 4.175 4.122 4.132 4.110 4.003 3.925 3.863 3.734 3.523 3.293 3.055 2.864 2.720 163.3 148.0 131.5 116.7 101.9 84.5 73.2 59.9 45.5 30.1 16.0 1.8 -10.6 -22.8 0.016 0.033 0.047 0.059 0.069 0.075 0.080 0.088 0.094 0.096 0.100 0.104 0.112 0.123 77.8 67.7 56.8 45.9 38.7 29.2 26.5 23.3 17.5 12.1 8.2 4.2 1.2 -3.1 0.732 0.707 0.675 0.634 0.604 0.506 0.484 0.454 0.407 0.375 0.362 0.352 0.331 0.295 -12.4 -23.8 -35.3 -46.0 -55.6 -70.8 -75.6 -83.3 -94.0 -109.8 -126.9 -144.4 -160.3 -178.0 Noise Parameters (VDS=2V,ID=7.5mA, Ta=25°C) Γopt f (GHz) Magn. Angle(deg.) Rn (Ω) NFmin (dB) 8 12 14 0.43 0.33 0.46 105.6 164.0 -147.9 13.5 5.6 7.2 0.52 0.59 0.89 Reference point Reference point Gate 0.96 Drain 45ﾟ Substrate: Teflon 2.5mm (εr=2.6, thickness=0.4mm) (4-φ0.4: through-hole) MITSUBISHI (4/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. 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Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. MITSUBISHI (5/5) June/2004