MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING FEATURES Class AB operation Internally matched to 50(ohm) system High output power Po(SAT) = 30W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 11 dB (TYP.) @ f=3.4 - 3.6 GHz Distortion ACP = -45dBc (TYP.) @ f=3.4 - 3.6 GHz RECOMMENDED BIAS CONDITIONS VDS = 12 (V) ID = 0.8 (A) RG=12 (ohm) GF-60 ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage MAXID Maximum drain current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C ELECTRICAL CARACTERISTICS Symbol Parameter VGS(off) Gate to source cut-off voltage Po(SAT) Output power GLP ID ACP *2 Linear power gain Drain current Adjacent Channel leakage Power Rth(ch-c) *3 Thermal resistance Ratings -15 -10 10 78 175 -65 / +175 Unit V V A W deg.C deg.C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. (Ta=25deg.C) Test conditions VDS = 3V , ID = 100mA VDS=12V, ID(RF off)=0.8A, f=3.4-3.6GHz VDS=12V, ID(RF off)=0.8A, f=3.4-3.6GHz Pout=34dBm delta Vf method Min. -0.5 Limits Typ. Max. -3.0 Unit V - 45 - dBm 10 - 11 1.2 -45 - 1.5 1.9 dB A dBc deg.C/W *2 :Mod.3GPP TEST MODEL 1 64code Single Signal *3 : Channel-case MITSUBISHI ELECTRIC (1/6) Apr. 2007 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS ACP , Gain vs. Pout -20 16 -15 12 -25 14 -20 10 -30 8 -35 6 -40 14 Gain 2 0 Gain(dB) -55 3.3 3.4 3.5 -30 8 -35 6 -40 ACP5MHz -50 3.2 10 -45 ACP5MHz 3.6 3.7 -25 4 -45 2 -50 0 3.8 -55 15 20 25 freq.(GHz) 30 35 40 45 Pout(dBm) Test Condition: Pout=34dBm,VD=12V,IDQ=0.8A.Ta=25deg.C Mod.：3GPP TEST MODEL 1 64code Single Signal Channel Bandwidth = 3.84MHz Test Condition: f=3.5GHz,VD=12V,IDQ=0.8A,Ta=25deg.C Mod.：3GPP TEST MODEL 1 64code Single Signal Channel Bandwidth = 3.84MHz EVM , Gain vs. Freq. @Pout=34dBm EVM , Gain vs. Pout 14 14 3.5 Gain Gain 12 12 3 10 10 2.5 Gain(dB),EVM(%) Gain(dB),EVM(%) @freq.=3.5GHz 8 6 4 8 2 6 1.5 ID 4 1 EVM EVM 2 2 0 0.5 0 3.2 3.3 3.4 3.5 ID(A) 4 Gain 12 ACP5MHz(dBc) Gain(dB) @freq.=3.5GHz ACP 5MHz ACP , Gain vs. Freq. @Pout=34dBm 3.6 3.7 3.8 0 15 freq.(GHz) 20 25 30 35 40 45 Pout(dBm) Test Condition: Pout=34dBm,VD=12V,IDQ=0.8A,Ta=25deg.C Mod: WiMAX Downlink,64QAM Channel Bandwidth: 3.5MHz Test Condition: f=3.5GHz,VD=12V,IDQ=0.8A,Ta=25deg.C Mod: WiMAX Downlink,64QAM Channel Bandwidth: 3.5MHz MITSUBISHI ELECTRIC (2/6) Apr. 2007 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS Sparameters m1 freq=3.400GHz m1=0.593 / -58.000 impedance = Z0 * (0.897 - j1.391) m2 freq=3.600GHz m2=0.148 / -58.000 impedance = Z0 * (1.131 - j0.290) S22 m4 S(2,2) S(1,1) m3 m2 m1 S11 freq (500.0MHz to 6.000GHz) m3 freq=3.400GHz m3=0.171 / 171.000 impedance = Z0 * (0.710 + j0.039) m4 freq=3.600GHz m4=0.340 / 84.000 impedance = Z0 * (0.847 + j0.647) 20 15 ＭＡＧ 10 MaxGain1 dB(S(2,1)) 5 0 Ｓ21 -5 -10 -15 -20 -25 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 freq, GHz 0.947 83 0.092 -105 0.002 MITSUBISHI ELECTRIC (3/6) -119 0.907 60 Apr. 2007 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS Sparameters freq. GHz 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 S11 (mag) 0.981 0.979 0.978 0.977 0.977 0.976 0.976 0.975 0.974 0.973 0.973 0.972 0.969 0.966 0.963 0.961 0.958 0.957 0.950 0.946 0.940 0.929 0.927 0.918 0.912 0.905 0.882 0.864 0.809 0.728 0.593 0.375 0.148 0.259 0.452 0.587 0.666 0.716 0.760 0.799 0.820 0.833 0.846 0.859 0.863 0.875 0.886 0.901 0.910 0.915 0.929 0.930 0.941 0.944 0.938 0.951 0.947 S21 (ang) 166 163 160 157 155 153 149 146 142 139 135 132 127 122 117 111 106 97 90 83 75 66 56 46 34 23 10 -6 -20 -39 -58 -76 -58 -2 -14 -30 -47 -61 -76 -91 -104 -119 -132 -145 -158 -170 178 166 155 144 135 124 115 107 98 92 83 (mag) 0.767 0.676 0.586 0.531 0.522 0.513 0.495 0.476 0.458 0.440 0.422 0.403 0.422 0.440 0.468 0.504 0.540 0.592 0.663 0.741 0.844 0.954 1.104 1.273 1.476 1.733 2.016 2.400 2.807 3.326 3.853 4.244 4.228 3.835 3.294 2.775 2.317 1.939 1.648 1.415 1.204 1.023 0.867 0.734 0.617 0.520 0.440 0.377 0.319 0.268 0.228 0.193 0.166 0.141 0.122 0.106 0.092 S12 (ang) 49 41 33 26 22 18 10 2 -6 -14 -22 -29 -38 -46 -56 -66 -76 -88 -100 -111 -125 -139 -155 -170 172 154 135 113 90 64 36 2 -32 -65 -96 -122 -147 -168 171 151 130 111 92 74 57 40 25 8 -6 -21 -35 -47 -61 -72 -84 -94 -105 (mag) 0.004 0.004 0.004 0.004 0.004 0.005 0.005 0.005 0.006 0.006 0.006 0.007 0.007 0.008 0.008 0.009 0.010 0.010 0.011 0.012 0.012 0.014 0.013 0.014 0.011 0.011 0.008 0.006 0.011 0.020 0.033 0.046 0.058 0.061 0.058 0.054 0.052 0.049 0.044 0.037 0.031 0.026 0.021 0.017 0.014 0.011 0.010 0.008 0.008 0.007 0.006 0.006 0.005 0.005 0.005 0.003 0.002 MITSUBISHI ELECTRIC ( 4 / 6) S22 (ang) 34 28 21 16 15 14 12 10 8 6 4 2 -2 -6 -12 -20 -28 -36 -41 -52 -64 -74 -87 -108 -120 -148 -179 110 54 6 -26 -60 -93 -127 -156 178 159 136 113 93 69 53 36 20 5 -6 -22 -30 -59 -69 -73 -75 -91 -118 -117 -133 -119 (mag) 0.921 0.919 0.916 0.913 0.912 0.910 0.907 0.904 0.901 0.898 0.895 0.892 0.881 0.870 0.857 0.844 0.831 0.806 0.785 0.760 0.717 0.673 0.624 0.566 0.495 0.418 0.339 0.246 0.161 0.118 0.171 0.267 0.340 0.374 0.374 0.366 0.361 0.367 0.393 0.418 0.460 0.502 0.545 0.596 0.641 0.684 0.724 0.761 0.791 0.815 0.838 0.859 0.874 0.885 0.897 0.899 0.907 (ang) 167 165 163 160 158 157 154 150 147 144 141 137 134 130 125 119 113 108 101 93 84 75 65 53 41 25 7 -16 -53 -119 171 123 84 46 14 -17 -44 -67 -88 -108 -126 -143 -159 -174 172 160 147 136 124 114 105 96 89 80 73 67 60 Apr. 2007 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET MGFC45B3436B RF TEST FIXTURE Electrolytic condenser 330uF VG VD Electrolytic condenser 330uF AS432166 AS432167 C5 C3 C4 R1 R2 C6 C7 C2 C8 C1 RF OUT RF IN OUT-3436 IN-3436 C1,C2,C7,C8=8pF C4=100nF C3,C5= 1000pF C6=470nF R1=12ohm R2=51ohm Board material :Teflon, t=0.8mm, Specific dielectric constant=2.6 UNIT:(mm) MITSUBISHI ELECTRIC (5/6) Apr. 2007 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. MITSUBISHI (6/6) Apr. 2007