Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz Gs = 10.5dB (Typ.) APPLICATION C to K band low noise amplifiers Fig.1 MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO Parameter Gate to drain voltage (Ta=25°C ) Ratings Unit -4 V Gate to source voltage -4 V ID Drain current 60 mA PT Tch Total power dissipation 50 mW Channel temperature 125 °C Tstg Storage temperature -65 to +125 °C ELECTRICAL CHARACTERISTICS Synbol V(BR)GDO Parameter Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. (Ta=25°C ) Test conditions Limits Unit MIN. TYP. MAX -3 -- -- Gate to drain breakdown voltage IG=-10µA IGSS Gate to source leakage current VGS=-2V,VDS=0V -- -- 50 µA IDSS Saturated drain current VGS=0V,VDS=2V 15 -- 60 mA Gate to source cut-off voltage VDS=2V,ID=500µA -0.1 -- -1.5 V Associated gain VDS=2V,ID=10mA 9.0 10.5 -- dB Minimum noise figure f=20GHz -- 0.55 0.80 dB VGS(off) Gs NFmin. V MITSUBISHI (1/5) Nov./2006 Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Top Side +0.20 2.15 -0.10 Bottom ) 05 0. +0.20 -0.10 20 0± 2.15 ② 2-R0.275 J 5 6EG ③ 2) . (2 ① ① .0 (1 1.2 ② 2- 2- A 2-R0.20 ③ ② ② 4- ± 55 0. 0.20±0.1 0.80±0.1 20.5 0± 05 0. (0.30) Square shape electrode is Drain (2.30) from "A" side view ① Gate ② Source ③ Drain MITSUBISHI (2/5) Nov./2006 05 0. Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS ID VS. VGS 50 50 Ta=25℃ V DS=2V 40 DRAINDrain CURRENT D(mA) (mA) Current IID DRAIN CURRENT ID(mA) Drain Current ID(mA) Ta=25℃ V GS=-0.1V/STEP 30 20 10 40 30 20 10 0 0 0 1 2 3 -1.00 Drain to Source voltage VDS(V) DRAIN TO SOURCE VOLTAGE VDS(V) -0.50 0.00 Gate Source voltage V GS(V) GATE TO to SOURCE VOLTAGE VGS(V) NF & Gs VS. ID 13 Ta=25℃ V DS=2V f=20GHz 雑音指数 NF (dB) NOISE FIGURE NF(dB) 1.2 1.1 12 11 Gs 1.0 10 0.9 9 0.8 8 0.7 7 NF 0.6 6 0.5 5 0.4 雑音最小電力利得 (dB) ASSOCIATED GAINGs Gs(dB) 1.3 4 0 5 10 15 20 ドレイン電流 ID (mA) DRAIN CURRENT ID(mA) MITSUBISHI (3/5) Nov./2006 Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS (VDS=2V,ID=10mA, Ta=25°C) Freq. S11 S21 S12 S22 (GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) 1 0.989 -13.0 4.537 165.8 0.014 78.9 0.637 -9.7 2 0.973 -25.9 4.502 152.9 0.028 71.8 0.629 -19.6 3 4 0.949 0.926 -38.7 -52.0 4.472 4.460 140.4 127.3 0.041 0.054 62.7 53.2 0.621 0.608 -29.2 -39.0 5 0.890 -64.9 4.431 114.9 0.066 44.4 0.592 -48.2 6 7 0.828 0.776 -81.1 -95.6 4.394 4.311 99.8 86.3 0.076 0.085 33.4 24.1 0.539 0.505 -60.1 -70.2 8 0.723 -110.6 4.230 73.2 0.093 15.2 0.469 -80.4 9 10 0.662 0.605 -126.6 -142.6 4.094 3.943 59.9 47.4 0.099 0.102 5.4 -4.0 0.423 0.368 -90.7 -100.2 11 12 0.551 0.514 -158.2 -174.5 3.826 3.740 35.4 23.7 0.102 0.100 -12.9 -19.7 0.318 0.279 -108.8 -116.3 13 0.488 167.0 3.622 11.2 0.099 -28.1 0.232 -126.2 14 15 0.486 0.480 149.0 131.8 3.572 3.512 -1.1 -12.6 0.098 0.094 -32.1 -38.4 0.203 0.169 -138.3 -148.1 16 0.509 113.0 3.425 -26.2 0.099 -43.0 0.148 -175.1 17 18 0.536 0.569 95.1 78.2 3.349 3.226 -39.1 -52.1 0.099 0.100 -49.9 -58.5 0.133 0.132 157.1 120.7 19 0.609 62.7 3.091 -66.1 0.099 -66.5 0.160 92.2 20 21 0.642 0.674 47.3 34.3 2.934 2.752 -79.2 -91.8 0.096 0.091 -75.2 -83.8 0.204 0.250 67.8 50.6 22 0.707 21.1 2.617 -104.8 0.089 -92.5 0.293 37.0 23 24 0.742 0.753 9.2 -2.2 2.471 2.307 -117.4 -130.2 0.082 0.081 -102.8 -111.9 0.350 0.390 23.8 13.5 25 26 0.775 0.803 -12.5 -22.5 2.139 2.008 -142.4 -155.0 0.072 0.069 -118.9 -135.9 0.430 0.474 2.4 -5.7 NOISE PARAMETERS Freq. (GHz) 18 20 22 24 26 (VDS=2V,ID=10mA, Ta=25°C) Γopt (mag) 0.358 0.372 0.390 0.417 0.473 (ang) Rn (ang) -137.2 -91.0 -47.7 -14.9 10.5 0.12 0.14 0.63 1.05 1.26 NFmin (dB) 0.51 0.55 0.77 1.05 1.25 Note) Rn is normalized by 50ohm Board: εr=2.6 thickness=0.4mm HEMT mount Drain 4-φ0.4 0.65 Reference Point 2.2mm 1.20 Gate 1.0mm Reference Point MITSUBISHI (4/5) Nov./2006 Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. 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However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. MITSUBISHI (5/5) Nov./2006