MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGF0909A, GaAs FET with an N-channel schottky gate, is Unit:millimeters designed for use in UHF band amplifiers. FEATURES 1 • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm 2 • High power added efficiency ηadd=45%(TYP.) 2 0.6±0.2 @f=2.3GHz,P1dB=20dBm ø2.2 3 APPLICATION For UHF Band power amplifiers 5.0 QUALITY GRADE • GG RECOMMENDED BIAS CONDITIONS 9.0±0.2 • VDS=10V 14.0 • ID=1.3A • Rg=100Ω 1 GATE • Refer to Bias Procedure 2 SOURCE 3 DRAIN GF-7 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Parameter Gate to source voltage Gate to drain voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings *1 -15 -15 5.0 15 31.5 27.3 175 -65 to +175 Unit V V A mA mA W ˚C ˚C *1:TC=25˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol IDSS VGs(off) gm P1dB GLP ηadd Rth(ch-c) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 Test conditions VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=1.3A VDS=10V,ID=1.3A,f=2.3GHz ∆Vf method Min – -2 – 37 10 – – Limits Typ – – 1.5 38 11 45 – Max 5 -5 – – – – 5.5 Unit A V S dBm dB % ˚C/W *1:Channel to case *2:Pin=22dBm Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS ID vs. VGS ID vs. VDS 6 6 VDS=3V Ta=25˚C VGS=-0.5V/Step Ta=25˚C VGS=0V 4 4 2 2 0 -3 -2 -1 0 0 1 0 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & add vs. Pin (f=2.3GHz) GLP,P1dB, ID and add vs. VDS (f=2.3GHz) 40 GP=11 10 9 dB VDS=10V ID=1.3A 13 ID=1.3A GLP 12 11 10 PO 39 P1dB 30 37 ηadd 20 0 20 30 INPUT POWER Pin(dBm) 50 40 30 20 10 0 35 ηadd 40 20 6 8 10 VDS(V) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90˚ +j50 +j25 +j10 +j100 0 25 50 100 ±180˚ 5 250 3.0GHz S21 +j250 3.0GHz 3.0GHz S22 3.0GHz 4 3 2 S12 0.5GHz 1 0 I S 21 I 0˚ 0.5GHz S11 -j10 -j250 0.1 -j25 -j100 -j50 Ta=25˚C VDS=10V ID=1.3A 0.2 -90˚ S PARAMETERS (Ta=25˚C,VDS=10V,ID=1.3A) Freq. (GHz) Magn. 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 0.968 0.966 0.966 0.965 0.964 0.963 0.961 0.960 0.959 0.959 0.959 0.958 0.958 0.957 0.958 0.958 0.957 0.956 0.954 0.954 0.953 0.953 0.953 0.948 0.956 0.944 S11 Angle(deg.) -155.5 -159.7 -163.4 -166.8 -168.4 -171.3 -173.8 -175.4 -176.8 -178.7 -179.7 178.4 177.2 176.0 174.7 174.3 173.3 172.3 171.2 169.9 169.0 167.6 166.1 164.6 163.3 162.0 Magn. 3.763 3.340 2.768 2.460 2.219 2.021 1.831 1.613 1.591 1.500 1.425 1.359 1.301 1.255 1.201 1.040 0.993 0.977 0.949 0.921 0.909 0.901 0.876 0.873 0.843 0.832 S21 Angle(deg.) 97.8 93.6 90.8 87.5 87.1 84.1 82.2 80.2 78.0 75.7 73.7 71.6 69.9 67.7 66.2 65.3 63.3 61.7 59.1 57.0 55.4 54.3 52.2 49.9 48.4 45.5 Magn. 0.013 0.013 0.014 0.014 0.015 0.015 0.016 0.016 0.017 0.017 0.018 0.018 0.019 0.019 0.020 0.021 0.021 0.022 0.022 0.023 0.023 0.024 0.024 0.025 0.025 0.025 S12 Angle(deg.) 13.2 14.6 16.5 18.2 20.6 22.5 24.1 25.8 27.8 29.5 31.2 33.8 35.4 37.6 39.5 41.5 43.1 44.8 46.5 48.7 50.8 52.6 54.3 55.2 57.3 58.0 Magn. 0.823 0.823 0.822 0.822 0.820 0.819 0.818 0.814 0.804 0.807 0.805 0.801 0.795 0.789 0.785 0.784 0.783 0.783 0.782 0.780 0.779 0.778 0.778 0.776 0.775 0.773 S22 Angle(deg.) -177.6 -179.6 178.5 178.2 177.6 176.8 175.6 176.6 176.1 175.7 175.3 175.1 174.7 174.0 173.4 174.4 174.2 173.4 172.7 172.2 171.6 170.3 168.9 167.7 166.9 165.1 K MSG/MAG (dB) 0.652 0.713 0.755 0.782 0.825 0.855 0.875 0.955 0.985 0.996 1.105 1.135 1.145 1.185 1.205 1.194 1.203 1.235 1.295 1.325 1.345 1.362 1.403 1.452 1.523 1.554 25.4 25.2 24.7 23.4 23.1 23.0 22.4 19.0 19.2 19.0 18.9 18.5 18.0 16.9 16.5 16.2 15.5 14.9 14.7 14.5 13.8 12.8 12.3 11.9 10.8 10.5 Nov. ´97