MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm • High power gain Gp=19dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm • Hermetic Package APPLICATION Fig.1 • For UHF Band power amplifiers QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V Delivery • Ids=300mA • Rg=500Ω -01:Tape & Reel(1K), -03:Trai(50pcs) Absolute maximum ratings Symbol (Ta=25°C) Parameter Ratings Unit VGSO Gate to sourcebreakdown voltage -15 V VGDO Gate to drain breakdown voltage -15 V ID Drain current 800 mA IGR Reverse gate current -2.4 mA IGF Forward gate current 10 mA PT Total power dissipation 6 W Tch Cannel temperature 175 °C Tstg Storage temperature -65 to +175 °C Electrical characteristics Symbol (Ta=25°C) Parameter Test conditions Limits Unit Min. Typ. Max. - 600 800 mA IDSS Saturated drain current VDS=3V,VGS=0V VGS(off) Gate to source cut-off voltage VDS=3V,ID=2.0mA -1.0 - -5.0 V gm Transconductance VDS=3V,ID=300mA - 260 - mS Po Output power VDS=10V,ID=300mA,f=1.9GHz 28 30 - dBm ηadd Power added Efficiency Pin=12dBm - 37 - % GLP Linear Power Gain VDS=10V,ID=300mA,f=1.9GHz 17 19 - dB NF Noise figure - 1.2 - dB Rth(ch-c) Thermal Resistance - 17 25 °C/W *1:Channel to case / *1 ∆Vf Method Above parameters, ratings, limits are subject to change. (1/12) Mitsubishi Electric Feb./2005 MGF0919A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 70 Vds=10V Id(off)=300mA f=1.9GHz 30 60 Po(dBm) 25 50 Po 20 40 PAE 30 15 Gp(dBm)PAE(%) 35 Gp 10 20 5 10 0 0 -10 -5 0 5 10 15 Pin(dBm) 40 35 30 25 20 15 10 5 0 -5 -10 VD=10V ID=300mA f1=1.90GHz f2=1.91Ghz 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 Po IM3 -15 -10 -5 0 5 10 15 IM3(dBc) Po(SCL)(dBm) Pi(SCL) vs.Po(SCL),IM3 20 Pin(SCL)(dBm) (2/12) Mitsubishi Electric Feb./2005 MGF0919A S PARAMETERS (Ta=25°C,VD=10V,ID=300mA, Reference Plane see Fig.1) S11 (mag) 0.933 0.904 0.888 0.879 0.876 0.876 0.876 0.877 0.876 0.873 0.868 0.861 0.853 0.842 0.830 0.818 0.803 0.788 0.772 0.753 0.732 0.706 0.667 0.623 0.590 0.584 0.619 0.696 0.800 0.899 S21 (ang) -74.30 -103.32 -122.18 -134.53 -142.94 -149.11 -154.07 -158.32 -162.04 -165.28 -168.13 -170.89 -174.26 -179.57 176.81 170.87 163.91 157.93 153.18 148.85 143.64 136.22 125.58 111.25 93.44 73.04 51.50 30.59 12.12 -2.56 (mag) 7.339 5.703 4.487 3.597 2.956 2.499 2.175 1.946 1.780 1.655 1.557 1.475 1.405 1.345 1.295 1.257 1.235 1.229 1.244 1.279 1.334 1.405 1.487 1.574 1.653 1.713 1.739 1.712 1.612 1.419 (ang) 130.03 108.92 92.96 80.59 70.65 62.27 54.80 47.84 41.10 34.44 27.78 21.10 14.42 7.74 1.06 -5.66 -12.47 -19.50 -26.89 -34.84 -43.57 -53.33 -64.35 -76.85 -91.04 -106.99 -124.73 -144.10 -164.77 175.59 S12 (mag) 0.021 0.029 0.032 0.032 0.031 0.029 0.028 0.027 0.027 0.028 0.029 0.030 0.032 0.034 0.036 0.038 0.041 0.044 0.049 0.055 0.062 0.072 0.084 0.099 0.115 0.134 0.152 0.170 0.185 0.193 S22 (ang) 47.28 31.40 19.66 10.98 4.55 -0.27 -3.93 -6.75 -8.96 -10.73 -12.16 -13.32 -14.29 -15.15 -15.98 -16.89 -18.03 -19.57 -21.70 -24.65 -28.65 -33.94 -40.75 -49.26 -59.62 -71.91 -86.08 -101.97 -119.23 -137.32 (mag) 0.269 0.341 0.405 0.460 0.507 0.546 0.579 0.605 0.627 0.645 0.660 0.672 0.683 0.693 0.701 0.708 0.712 0.713 0.711 0.703 0.690 0.670 0.643 0.608 0.566 0.517 0.462 0.391 0.384 0.463 (ang) -137.41 -141.53 -144.12 -145.74 -146.82 -147.71 -148.61 -149.68 -151.00 -152.57 -154.36 -156.31 -158.32 -160.29 -162.12 -163.74 -165.09 -166.15 -166.96 -167.62 -168.31 -169.31 -170.99 -173.83 -178.45 177.11 175.48 -179.26 -163.79 -150.25 K MAG/MSG 0.25 0.29 0.35 0.44 0.55 0.68 0.80 0.90 0.96 0.99 1.03 1.10 1.12 1.16 1.21 1.25 1.26 1.27 1.22 1.19 1.17 1.14 1.15 1.15 1.12 1.06 0.99 0.93 0.87 0.82 (dB) 25.43 22.94 21.47 20.51 19.79 19.35 18.90 18.58 18.19 17.72 16.20 14.98 14.31 13.55 12.76 12.20 11.74 11.35 11.23 11.02 10.83 10.63 10.14 9.69 9.45 9.59 10.58 10.03 9.40 8.66 2.0 Gate Mark Round corner 0.8 0.80 Gate Mark (1) (1) (3) 2.8 1.20 4.20 Reference Plane Reference Plane (2) (2) 0.6 0.25 4.00 2.5 0.3 freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200 (1) Gate (2) Drain (3) Source BACK SIDE PATTERN (Unit:mm) Fig.1 OUTLINE DRAWING (3/12) Mitsubishi Electric Feb./2005 MGF0919A RF TEST DATA(CW) VD=10V,Idq=0.3A Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin Po v.s. Pin freq.=3.3GHz freq.=3.3GHz 16 5 0.7 30 0.6 28 12 24 11 10 4 Tc=80deg.C 8 Tc=25deg.C Tc=-20deg.C 7 22 20 0.5 0.4 16 Tc=80deg.C 14 Tc=25deg.C 0 5 10 15 Pin(dBm) 20 25 0 -2 0.3 -3 Tc=-20deg.C 10 -5 1 -1 12 6 Tc=-20deg.C 2 18 9 Tc=25deg.C 3 Ig(RF)(mA) 26 Id(RF)(A) 13 Po(dBm) Gp(dB) 14 Tc=80deg.C Tc=80deg.C Tc=25deg.C Tc=-20deg.C 32 15 Ig(RF) v.s. Pin freq.=3.3GHz Id(RF) v.s. Pin freq.=3.3GHz 34 -4 0.2 -5 0 5 10 15 Pin(dBm) 20 25 -5 0 5 10 15 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (4/12) 20 25 -5 0 5 10 15 Pin(dBm) 20 25 MGF0919A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=3.3GHz VD=10V Po v.s. Pin freq.=3.3GHz VD=10V 16 34 15 32 Ig(RF) v.s. Pin freq.=3.3GHz VD=10V 5 0.5 0.4 3 28 13 2 10 24 22 20 Ig(RF)(mA) IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A 11 Id(RF)(A) Po(dBm) 26 12 0.3 0.2 18 9 IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A 16 8 14 7 12 6 10 -5 0 5 10 15 Pin(dBm) 20 25 IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A 4 30 14 Gp(dB) Id(RF) v.s. Pin freq.=3.3GHz VD=10V 0 5 10 15 Pin(dBm) 20 25 0 -1 -2 0.1 IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A 0.0 -5 1 -5 0 5 10 15 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (5/12) 20 25 -3 -4 -5 0 5 10 15 Pin(dBm) 20 25 MGF0919A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=3.3GHz IDQ=0.3 Po v.s. Pin freq.=3.3Hz IDQ=0.3A 16 34 15 32 Id(RF) v.s. Pin freq.=3.3GHz IDQ=0.3A 5 0.5 0.4 3 28 26 10 8 20 18 VD=10V VD=9V VD=8V 9 22 14 7 12 6 10 -5 0 5 10 VD=10V VD=9V VD=8V 16 15 Pin(dBm) 20 25 Ig(RF)(mA) 11 2 24 Id(RF)(A) 12 Po(dBm) Gp(dB) 13 VD=10V VD=9V VD=8V 4 30 14 Ig(RF) v.s. Pin freq.=3.3GHz IDQ=0.3A 0.3 0.2 0 5 10 15 Pin(dBm) 20 25 0 -1 VD=10V VD=9V VD=8V 0.1 -2 -3 -4 0.0 -5 1 -5 0 5 10 15 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (6/12) 20 25 -5 0 5 10 15 Pin(dBm) 20 25 MGF0919A RF TEST DATA(W-CDMA) VD=10V,Idq=0.3A ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal ACLR -5MHz freq.=3.3GHz ACLR -10MHz freq.=3.3GHz -15 Tc=80deg.C Tc=25deg.C Tc=-20deg.C -20 -25 ACLR +10MHz freq.=3.3GHz -15 -15 Tc=80deg.C Tc=25deg.C Tc=-20deg.C -20 -25 Tc=80deg.C Tc=25deg.C Tc=-20deg.C -20 -25 -25 -30 -35 -35 -35 -35 -45 -50 -40 -45 -50 ACLR(dBc) -30 ACLR(dBc) -30 -40 -40 -45 -50 -40 -45 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 5 10 15 20 Po(dBm) 25 30 -70 5 10 15 20 Po(dBm) 25 30 Tc=80deg.C Tc=25deg.C Tc=-20deg.C -20 -30 ACLR(dBc) ACLR(dBc) ACLR +5MHz freq.=3.3GHz -15 -70 5 10 15 20 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (7/12) 25 30 5 10 15 20 Po(dBm) 25 30 MGF0919A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal ACLR -5MHz freq.=3.3GHz VD=10V ACLR -10MHz freq.=3.3GHz VD=10V -15 IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A -25 -15 -20 -25 -30 -35 -35 ACLR(dBc) -30 -40 -45 -15 IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A -20 IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A -25 ACLR(dBc) -20 ACLR +10MHz freq.=3.3GHz VD=10V -40 -45 -25 -30 -30 -35 -35 -40 -45 -40 -45 -50 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 -70 -70 5 10 15 20 Po(dBm) 25 30 5 10 15 20 Po(dBm) 25 30 5 10 15 20 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (8/12) IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A -20 ACLR(dBc) -15 ACLR(dBc) ACLR +5MHz freq.=3.3GHz VD=10V 25 30 5 10 15 20 Po(dBm) 25 30 MGF0919A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal ACLR -5MHz freq.=3.3GHz IDQ=0.3A ACLR -10MHz freq.=3.3GHz IDQ=0.3A -15 -20 VD=10V VD=9V VD=8V -25 -30 -15 -25 ACLR(dBc) -35 -40 -45 -15 -20 VD=10V VD=9V VD=8V -30 -30 -35 -35 -40 -45 -20 VD=10V VD=9V VD=8V -25 ACLR(dBc) -20 ACLR +10MHz freq.=3.3GHz IDQ=0.3A -30 -40 -45 -35 -40 -45 -50 -50 -50 -50 -55 -55 -55 -55 -60 -60 -60 -60 -65 -65 -65 -65 -70 -70 -70 5 10 15 20 Po(dBm) 25 30 5 10 15 20 Po(dBm) 25 30 VD=10V VD=9V VD=8V -25 ACLR(dBc) -15 ACLR(dBc) ACLR +5MHz freq.=3.3GHz IDQ=0.3A -70 5 10 15 20 Po(dBm) MITSUBISHI ELECTRIC CORPORATION (9/12) 25 30 5 10 15 20 Po(dBm) 25 30 MGF0919A RF TEST DATA VD=10V,Idq=0.3A IM3,IM5 v.s. Pin IM3,IM5 v.s. Po -10 IM3_Lo IM3_Hi -20 IM5_Lo IM5_Hi IM3,IM5(dBc) -30 f1=3.30GHz f2=3.31GHz -40 -50 -60 -70 7 9 11 13 15 17 19 21 Po(S.C.L.)(dBm) MITSUBISHI ELECTRIC CORPORATION (10/12) 23 25 27 (11/12) Mitsubishi Electric Feb./2005 MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. 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