MITSUBISHI MGF0919A_05

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
• High power gain
Gp=19dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
• Hermetic Package
APPLICATION
Fig.1
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V
Delivery
• Ids=300mA
• Rg=500Ω
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings
Symbol
(Ta=25°C)
Parameter
Ratings
Unit
VGSO Gate to sourcebreakdown voltage
-15
V
VGDO Gate to drain breakdown voltage
-15
V
ID
Drain current
800
mA
IGR
Reverse gate current
-2.4
mA
IGF
Forward gate current
10
mA
PT
Total power dissipation
6
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C
Electrical characteristics
Symbol
(Ta=25°C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
-
600
800
mA
IDSS
Saturated drain current
VDS=3V,VGS=0V
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=2.0mA
-1.0
-
-5.0
V
gm
Transconductance
VDS=3V,ID=300mA
-
260
-
mS
Po
Output power
VDS=10V,ID=300mA,f=1.9GHz
28
30
-
dBm
ηadd
Power added Efficiency
Pin=12dBm
-
37
-
%
GLP
Linear Power Gain
VDS=10V,ID=300mA,f=1.9GHz
17
19
-
dB
NF
Noise figure
-
1.2
-
dB
Rth(ch-c)
Thermal Resistance
-
17
25
°C/W
*1:Channel to case /
*1
∆Vf Method
Above parameters, ratings, limits are subject to change.
(1/12)
Mitsubishi Electric
Feb./2005
MGF0919A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
70
Vds=10V
Id(off)=300mA
f=1.9GHz
30
60
Po(dBm)
25
50
Po
20
40
PAE
30
15
Gp(dBm)PAE(%)
35
Gp
10
20
5
10
0
0
-10
-5
0
5
10
15
Pin(dBm)
40
35
30
25
20
15
10
5
0
-5
-10
VD=10V
ID=300mA
f1=1.90GHz
f2=1.91Ghz
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
Po
IM3
-15
-10
-5
0
5
10
15
IM3(dBc)
Po(SCL)(dBm)
Pi(SCL) vs.Po(SCL),IM3
20
Pin(SCL)(dBm)
(2/12)
Mitsubishi Electric
Feb./2005
MGF0919A S PARAMETERS (Ta=25°C,VD=10V,ID=300mA, Reference Plane see Fig.1)
S11
(mag)
0.933
0.904
0.888
0.879
0.876
0.876
0.876
0.877
0.876
0.873
0.868
0.861
0.853
0.842
0.830
0.818
0.803
0.788
0.772
0.753
0.732
0.706
0.667
0.623
0.590
0.584
0.619
0.696
0.800
0.899
S21
(ang)
-74.30
-103.32
-122.18
-134.53
-142.94
-149.11
-154.07
-158.32
-162.04
-165.28
-168.13
-170.89
-174.26
-179.57
176.81
170.87
163.91
157.93
153.18
148.85
143.64
136.22
125.58
111.25
93.44
73.04
51.50
30.59
12.12
-2.56
(mag)
7.339
5.703
4.487
3.597
2.956
2.499
2.175
1.946
1.780
1.655
1.557
1.475
1.405
1.345
1.295
1.257
1.235
1.229
1.244
1.279
1.334
1.405
1.487
1.574
1.653
1.713
1.739
1.712
1.612
1.419
(ang)
130.03
108.92
92.96
80.59
70.65
62.27
54.80
47.84
41.10
34.44
27.78
21.10
14.42
7.74
1.06
-5.66
-12.47
-19.50
-26.89
-34.84
-43.57
-53.33
-64.35
-76.85
-91.04
-106.99
-124.73
-144.10
-164.77
175.59
S12
(mag)
0.021
0.029
0.032
0.032
0.031
0.029
0.028
0.027
0.027
0.028
0.029
0.030
0.032
0.034
0.036
0.038
0.041
0.044
0.049
0.055
0.062
0.072
0.084
0.099
0.115
0.134
0.152
0.170
0.185
0.193
S22
(ang)
47.28
31.40
19.66
10.98
4.55
-0.27
-3.93
-6.75
-8.96
-10.73
-12.16
-13.32
-14.29
-15.15
-15.98
-16.89
-18.03
-19.57
-21.70
-24.65
-28.65
-33.94
-40.75
-49.26
-59.62
-71.91
-86.08
-101.97
-119.23
-137.32
(mag)
0.269
0.341
0.405
0.460
0.507
0.546
0.579
0.605
0.627
0.645
0.660
0.672
0.683
0.693
0.701
0.708
0.712
0.713
0.711
0.703
0.690
0.670
0.643
0.608
0.566
0.517
0.462
0.391
0.384
0.463
(ang)
-137.41
-141.53
-144.12
-145.74
-146.82
-147.71
-148.61
-149.68
-151.00
-152.57
-154.36
-156.31
-158.32
-160.29
-162.12
-163.74
-165.09
-166.15
-166.96
-167.62
-168.31
-169.31
-170.99
-173.83
-178.45
177.11
175.48
-179.26
-163.79
-150.25
K
MAG/MSG
0.25
0.29
0.35
0.44
0.55
0.68
0.80
0.90
0.96
0.99
1.03
1.10
1.12
1.16
1.21
1.25
1.26
1.27
1.22
1.19
1.17
1.14
1.15
1.15
1.12
1.06
0.99
0.93
0.87
0.82
(dB)
25.43
22.94
21.47
20.51
19.79
19.35
18.90
18.58
18.19
17.72
16.20
14.98
14.31
13.55
12.76
12.20
11.74
11.35
11.23
11.02
10.83
10.63
10.14
9.69
9.45
9.59
10.58
10.03
9.40
8.66
2.0
Gate Mark
Round corner
0.8
0.80
Gate Mark
(1)
(1)
(3)
2.8
1.20
4.20
Reference Plane
Reference Plane
(2)
(2) 0.6
0.25
4.00
2.5
0.3
freq.
(MHz)
600
1000
1400
1800
2200
2600
3000
3400
3800
4200
4600
5000
5400
5800
6200
6600
7000
7400
7800
8200
8600
9000
9400
9800
10200
10600
11000
11400
11800
12200
(1) Gate
(2) Drain
(3) Source
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
(3/12)
Mitsubishi Electric
Feb./2005
MGF0919A RF TEST DATA(CW)
VD=10V,Idq=0.3A
Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin
Po v.s. Pin
freq.=3.3GHz
freq.=3.3GHz
16
5
0.7
30
0.6
28
12
24
11
10
4
Tc=80deg.C
8
Tc=25deg.C
Tc=-20deg.C
7
22
20
0.5
0.4
16
Tc=80deg.C
14
Tc=25deg.C
0
5
10
15
Pin(dBm)
20
25
0
-2
0.3
-3
Tc=-20deg.C
10
-5
1
-1
12
6
Tc=-20deg.C
2
18
9
Tc=25deg.C
3
Ig(RF)(mA)
26
Id(RF)(A)
13
Po(dBm)
Gp(dB)
14
Tc=80deg.C
Tc=80deg.C
Tc=25deg.C
Tc=-20deg.C
32
15
Ig(RF) v.s. Pin freq.=3.3GHz
Id(RF) v.s. Pin freq.=3.3GHz
34
-4
0.2
-5
0
5
10
15
Pin(dBm)
20
25
-5
0
5 10 15
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION
(4/12)
20
25
-5
0
5
10
15
Pin(dBm)
20
25
MGF0919A RF TEST DATA(CW)
Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin
freq.=3.3GHz VD=10V
Po v.s. Pin
freq.=3.3GHz VD=10V
16
34
15
32
Ig(RF) v.s. Pin
freq.=3.3GHz VD=10V
5
0.5
0.4
3
28
13
2
10
24
22
20
Ig(RF)(mA)
IDQ=0.3A
IDQ=0.24A
IDQ=0.18A
IDQ=0.08A
11
Id(RF)(A)
Po(dBm)
26
12
0.3
0.2
18
9
IDQ=0.3A
IDQ=0.24A
IDQ=0.18A
IDQ=0.08A
16
8
14
7
12
6
10
-5
0
5
10
15
Pin(dBm)
20
25
IDQ=0.3A
IDQ=0.24A
IDQ=0.18A
IDQ=0.08A
4
30
14
Gp(dB)
Id(RF) v.s. Pin
freq.=3.3GHz VD=10V
0
5
10
15
Pin(dBm)
20
25
0
-1
-2
0.1
IDQ=0.3A
IDQ=0.24A
IDQ=0.18A
IDQ=0.08A
0.0
-5
1
-5
0
5
10
15
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION
(5/12)
20
25
-3
-4
-5
0
5
10
15
Pin(dBm)
20
25
MGF0919A RF TEST DATA(CW)
Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin
freq.=3.3GHz IDQ=0.3
Po v.s. Pin
freq.=3.3Hz IDQ=0.3A
16
34
15
32
Id(RF) v.s. Pin
freq.=3.3GHz IDQ=0.3A
5
0.5
0.4
3
28
26
10
8
20
18
VD=10V
VD=9V
VD=8V
9
22
14
7
12
6
10
-5
0
5
10
VD=10V
VD=9V
VD=8V
16
15
Pin(dBm)
20
25
Ig(RF)(mA)
11
2
24
Id(RF)(A)
12
Po(dBm)
Gp(dB)
13
VD=10V
VD=9V
VD=8V
4
30
14
Ig(RF) v.s. Pin
freq.=3.3GHz IDQ=0.3A
0.3
0.2
0
5
10
15
Pin(dBm)
20
25
0
-1
VD=10V
VD=9V
VD=8V
0.1
-2
-3
-4
0.0
-5
1
-5
0
5
10
15
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION
(6/12)
20
25
-5
0
5
10
15
Pin(dBm)
20
25
MGF0919A RF TEST DATA(W-CDMA)
VD=10V,Idq=0.3A
ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=3.3GHz
ACLR -10MHz freq.=3.3GHz
-15
Tc=80deg.C
Tc=25deg.C
Tc=-20deg.C
-20
-25
ACLR +10MHz freq.=3.3GHz
-15
-15
Tc=80deg.C
Tc=25deg.C
Tc=-20deg.C
-20
-25
Tc=80deg.C
Tc=25deg.C
Tc=-20deg.C
-20
-25
-25
-30
-35
-35
-35
-35
-45
-50
-40
-45
-50
ACLR(dBc)
-30
ACLR(dBc)
-30
-40
-40
-45
-50
-40
-45
-50
-55
-55
-55
-55
-60
-60
-60
-60
-65
-65
-65
-65
-70
-70
5
10
15
20
Po(dBm)
25
30
-70
5
10
15
20
Po(dBm)
25
30
Tc=80deg.C
Tc=25deg.C
Tc=-20deg.C
-20
-30
ACLR(dBc)
ACLR(dBc)
ACLR +5MHz freq.=3.3GHz
-15
-70
5
10
15
20
Po(dBm)
MITSUBISHI ELECTRIC CORPORATION
(7/12)
25
30
5
10
15
20
Po(dBm)
25
30
MGF0919A RF TEST DATA(W-CDMA)
ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz
freq.=3.3GHz VD=10V
ACLR -10MHz
freq.=3.3GHz VD=10V
-15
IDQ=0.3A
IDQ=0.24A
IDQ=0.18A
IDQ=0.08A
-25
-15
-20
-25
-30
-35
-35
ACLR(dBc)
-30
-40
-45
-15
IDQ=0.3A
IDQ=0.24A
IDQ=0.18A
IDQ=0.08A
-20
IDQ=0.3A
IDQ=0.24A
IDQ=0.18A
IDQ=0.08A
-25
ACLR(dBc)
-20
ACLR +10MHz
freq.=3.3GHz VD=10V
-40
-45
-25
-30
-30
-35
-35
-40
-45
-40
-45
-50
-50
-50
-50
-55
-55
-55
-55
-60
-60
-60
-60
-65
-65
-65
-65
-70
-70
-70
-70
5
10
15
20
Po(dBm)
25
30
5
10
15
20
Po(dBm)
25
30
5
10
15
20
Po(dBm)
MITSUBISHI ELECTRIC CORPORATION
(8/12)
IDQ=0.3A
IDQ=0.24A
IDQ=0.18A
IDQ=0.08A
-20
ACLR(dBc)
-15
ACLR(dBc)
ACLR +5MHz
freq.=3.3GHz VD=10V
25
30
5
10
15
20
Po(dBm)
25
30
MGF0919A RF TEST DATA(W-CDMA)
ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz
freq.=3.3GHz IDQ=0.3A
ACLR -10MHz
freq.=3.3GHz IDQ=0.3A
-15
-20
VD=10V
VD=9V
VD=8V
-25
-30
-15
-25
ACLR(dBc)
-35
-40
-45
-15
-20
VD=10V
VD=9V
VD=8V
-30
-30
-35
-35
-40
-45
-20
VD=10V
VD=9V
VD=8V
-25
ACLR(dBc)
-20
ACLR +10MHz
freq.=3.3GHz IDQ=0.3A
-30
-40
-45
-35
-40
-45
-50
-50
-50
-50
-55
-55
-55
-55
-60
-60
-60
-60
-65
-65
-65
-65
-70
-70
-70
5
10
15
20
Po(dBm)
25
30
5
10
15
20
Po(dBm)
25
30
VD=10V
VD=9V
VD=8V
-25
ACLR(dBc)
-15
ACLR(dBc)
ACLR +5MHz
freq.=3.3GHz IDQ=0.3A
-70
5
10
15
20
Po(dBm)
MITSUBISHI ELECTRIC CORPORATION
(9/12)
25
30
5
10
15
20
Po(dBm)
25
30
MGF0919A RF TEST DATA
VD=10V,Idq=0.3A
IM3,IM5 v.s. Pin
IM3,IM5 v.s. Po
-10
IM3_Lo
IM3_Hi
-20
IM5_Lo
IM5_Hi
IM3,IM5(dBc)
-30
f1=3.30GHz
f2=3.31GHz
-40
-50
-60
-70
7
9
11
13
15
17
19
21
Po(S.C.L.)(dBm)
MITSUBISHI ELECTRIC CORPORATION
(10/12)
23
25
27
(11/12)
Mitsubishi Electric
Feb./2005
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems.
In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design,
malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products
from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of
safety in the products when in use by customers.
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1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric
semiconductors best suited to their specific use applications. Please be aware, however, that the technical information
contained in these materials does not comprise consent for the execution or use of intellectual property rights or other
rights owned by Mitsubishi Electric Corporation.
2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts,
programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights
of third-party owners resulting from such use.
3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at
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4. Every possible effort has been made to ensure that the information described in these materials is fully accurate.
However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these
materials.
5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in
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Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer
assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept
responsibility for the propriety of application.
6. The products described in these materials, with the exception of special mention concerning use and reliability, have
been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products
have not been designed and manufactured with the purpose of application in machinery or systems that will be used
under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a
particularly high degree of reliability. When considering the use of the products described in these materials in
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please inquire at Mitsubishi Electric or an authorized dealer.
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9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention,
to Mitsubishi Electric or an authorized dealer.
(12/12)
Mitsubishi Electric
Feb./2005