MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 2 9.6+/-0.3 •High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz •High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 +0.05 0.1 -0.01 R1.6+/-0.15 3 APPLICATION 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. 6.2+/-0.7 18.5+/-0.3 3.3+/-0.2 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=30MHz ,VDD=12.5V Pin=7W, Idq=1.0A VDD=15.2V,Po=100W(Pin Control) f=30MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.5 100 55 LIMITS TYP MAX. 10 1 4.5 110 60 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD100HHF1 MITSUBISHI ELECTRIC 1/7 REV.3 8 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD100HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,100W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 160 8 120 6 Ids(A) CHANNEL DISSIPATION Pch(W) 200 Vgs-Ids CHARACTERISTICS 10 80 4 2 40 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 1 2 3 4 Vgs(V) 5 6 7 Vds VS. Ciss CHARACTERISTICS 10 300 Vgs=6V Ta=+25°C 8 250 Vgs=5.7V Ta=+25°C f=1MHz 200 6 Ciss(pF) Ids(A) Ta=+25°C Vds=10V Vgs=5.4V 4 Vgs=5.1V Vgs=4.8V 2 150 100 50 Vgs=4.5V Vgs=4.2V 0 0 2 4 6 Vds(V) 8 0 0 10 30 Vds VS. Crss CHARACTERISTICS 500 40 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 400 30 300 Crss(pF) Coss(pF) 20 Vds(V) Vds VS. Coss CHARACTERISTICS 200 20 10 100 0 0 0 10 20 0 30 Vds(V) RD100HHF1 10 10 20 30 Vds(V) MITSUBISHI ELECTRIC 2/7 REV.3 8 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD100HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,100W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 60 Gp 20 40 10 0 0 10 20 30 Pin(dBm) 0 0 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Idd 40 20 0 4 RD100HHF1 6 8 10 Vdd(V) 12 40 30 20 2 4 6 Pin(W) 8 10 Vgs-Ids CHARACTERISTICS 2 +25°C Po 60 Ta=25°C f=30MHz Vdd=12.5V Idq=1A 10 Vds=10V Tc=-25~+75°C 8 Ids(A) 80 Idd 0 40 Idd(A) Po(W) 100 50 40 20 140 120 60 60 Vdd-Po CHARACTERISTICS Ta=25°C f=30MHz Pin=7W Idq=1A Zg=ZI=50 ohm ηd 80 20 Ｉｄｄ 70 Po ηd(%) 80 ηｄ 30 80 100 Pout(W) , Idd(A) 40 100 Po ηd(%) Po(dBm) , Gp(dB) , Idd(A) 120 Ta=+25°C f=30MHz Vdd=12.5V Idq=1A 50 Pin-Po CHARACTERISTICS 6 4 +75°C 2 -25°C 0 0 14 MITSUBISHI ELECTRIC 3/7 1 2 3 4 Vgs(V) 5 6 7 REV.3 8 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD100HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,100W TEST CIRCUIT(f=30MHz) Vgg Vdd L2 C1 220/56pF 0-50pF L3 72/72/82pF C2 L1 20kOHM C3 330uF,50V 2.7kOHM*2 4.7OHM*2 RF-IN C4 L4 RF-OUT 100OHM 82/220pF 0-50pF 110pF 0-110pF 220/56pF 30/30pF 270pF 4.5 14 35 12 20 44 47 35 50 52 54 60 82 84 86 87 90 100 100 12 C1:330pF*3,0.022uF in parallel C2:33uF*2,220pF in parallel C3:68pF,82pF in parallel C4:15pF,18pF in parallel 8 14 L1:7Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire L2:10Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire L3:4Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire L4:3Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire RD100HHF1 Dimensions:mm Note:Board material-teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm MITSUBISHI ELECTRIC 4/7 REV.3 8 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=10Ω f=30MHz Zout f=30MHz Zin Zin , Zout RD100HHF1 f Zin Zout (MHz) (ohm) (ohm) Conditions 30 8.86-j14.31 0.64-j0.01 Po=115W, Vdd=12.5V,Pin=7W MITSUBISHI ELECTRIC 5/7 REV.3 8 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 RD100HHF1 S11 (mag) 0.835 0.839 0.849 0.886 0.915 0.932 0.945 0.951 0.958 0.960 0.964 0.966 0.970 0.967 0.971 0.970 0.969 0.970 0.976 0.973 0.973 0.977 (ang) -158.6 -171.1 -172.9 -173.9 -175.1 -176.4 -177.3 -178.2 -179.3 -179.8 179.5 178.7 178.2 177.5 177.0 176.5 175.6 175.2 174.5 173.9 173.2 172.6 S21 (mag) (ang) 31.451 94.8 10.628 79.3 6.212 71.0 2.749 54.1 1.541 40.2 0.972 31.6 0.671 24.5 0.481 20.1 0.365 15.2 0.291 13.4 0.243 8.5 0.195 6.8 0.154 5.2 0.133 4.8 0.119 1.0 0.109 -1.3 0.092 0.6 0.080 -4.0 0.073 -1.9 0.067 -5.4 0.058 4.1 0.049 -8.7 S12 (mag) 0.014 0.014 0.012 0.012 0.009 0.007 0.006 0.005 0.003 0.003 0.004 0.003 0.004 0.005 0.003 0.006 0.007 0.005 0.007 0.008 0.008 0.011 MITSUBISHI ELECTRIC 6/7 S22 (ang) 5.2 -9.9 -20.7 -34.1 -27.8 -36.9 -54.4 -30.4 13.1 -18.0 45.3 42.3 78.6 80.1 72.0 61.3 67.2 82.2 78.7 69.9 86.8 78.7 (mag) 0.770 0.764 0.786 0.842 0.880 0.908 0.946 0.941 0.952 0.974 0.963 0.971 0.975 0.965 0.972 0.973 0.964 0.974 0.969 0.973 0.973 0.971 (ang) -162.1 -171.6 -171.4 -171.4 -173.6 -174.3 -176.2 -177.4 -178.3 -179.8 179.6 178.6 177.5 176.8 176.0 175.1 174.9 173.9 173.3 172.6 171.5 171.7 REV.3 8 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD100HHF1 MITSUBISHI ELECTRIC 7/7 REV.3 8 APRIL. 2004