FREESCALE MRF5S21150SR3

MOTOROLA
Freescale Semiconductor, Inc.
Order this document
by MRF5S21150/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Freescale Semiconductor, Inc...
RF Power Field Effect Transistors MRF5S21150R3
N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts,
IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 33 Watts Avg.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 — - 37 dBc
ACPR — - 39 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 33 W AVG.,
2 x W - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S21150R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S21150SR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
367
2.1
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW
125
Watts
Symbol
Value (1)(2)
Unit
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 80°C, 33 W CW
RθJC
0.47
0.53
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
For More Information On This Product,
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MRF5S21150R3 MRF5S21150SR3
1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 µAdc)
VGS(th)
2.5
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1300 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3.6 Adc)
gfs
—
9
—
S
Crss
—
3.2
—
pF
Freescale Semiconductor, Inc...
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
11
12.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
23
25
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
- 37
- 35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)
ACPR
—
- 39
- 37
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
- 12
-9
dB
(1) Part is internally matched both on input and output.
MRF5S21150R3 MRF5S21150SR3
2
MOTOROLA RF DEVICE DATA
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R1
Vbias
+
C1
C10
C5
R2
Z6
Z1
Z2
Z3
Z4
Z5
Z10
Z12
Z9
C4
+
C20
Vsupply
C19
Z13
Z8
C3
Z14
Z15
Z16
Z17
RF
OUTPUT
C17
Z11
C2
+
C12
C9
C6
RF
INPUT
+
C11
C18
Z7
C13
DUT
C8
+
C15
C14
+
C16
Freescale Semiconductor, Inc...
C7
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
0.500″ x 0.083″ Microstrip
0.505″ x 0.083″ Microstrip
0.536″ x 0.083″ Microstrip
0.776″ x 0.083″ Microstrip
0.119″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.024″ Microstrip
0.117″ x 1.100″ Microstrip
Z10, Z11
Z12
Z13
Z14
Z15, Z16
Z17
PCB
0.709″ x 0.083″ Microstrip
0.415″ x 1.100″ Microstrip
0.874″ x 0.083″ Microstrip
1.182″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.030″, εr = 2.55
Figure 1. MRF5S21150 Test Circuit Schematic
Table 1. MRF5S21150 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1
22 µF, 35 V Tantalum Capacitor
TAJE226M035R
AVX
C2, C6, C8, C9, C13, C18,
C19
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C3,C4
1.8 pF 100B Chip Capacitors
100B1R8BW
ATC
C5, C7, C10, C14
220 nF Chip Capacitors (1812)
1812Y224KXA
Vishay - Vitramon
C11, C12, C15, C16
10 µF, 35 V Tantalum Capacitors
293D1106X9035D
Vishay - Sprague
C17
0.3 pF Chip Capacitor
100B0R3BW
ATC
C20
470 µF, 63 V Electrolytic Capacitor, Radial
13661471
Philips
R1, R2
10 kW, 1/4 W Chip Resistors
MOTOROLA RF DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3
3
Freescale Semiconductor, Inc.
C20
C1
C9
C5
C10
C11 C12
R1
R2
C6
C2
C4
CUT OUT AREA
C19
C3
Freescale Semiconductor, Inc...
C8
C7
C17
C13
C14
C18
C15 C16
MRF5S21150
Rev 0
Figure 2. MRF5S21150 Test Circuit Component Layout
MRF5S21150R3 MRF5S21150SR3
4
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TYPICAL CHARACTERISTICS
30
η
11
25
10
IRL
9
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1300 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
8
7
6
20
−28
−32
−36
IM3
ACPR
5
2060
−40
2080
2100
2120
2140
2160
2180
−44
2220
2200
−10
−15
−20
−25
−30
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
12
η, DRAIN
EFFICIENCY (%)
35
Gps
IM3 (dBc), ACPR (dBc)
13
−25
G ps , POWER GAIN (dB)
IDQ = 1900 mA
1600 mA
13
1300 mA
1000 mA
12
11
700 mA
10
1
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10
100
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
14
−30
1900 mA
−35
IDQ = 700 mA
−40
1600 mA
1300 mA
−45
−50
1000 mA
−55
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−60
−65
1000
1
10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
58
Pout , OUTPUT POWER (dBm)
−35
−40
5th Order
−45
7th Order
−50
−55
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1300 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
−60
0.1
Ideal
57
3rd Order
−30
1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
Freescale Semiconductor, Inc...
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
P3dB = 53.58 dBm (228 W)
56
55
P1dB = 52.95 dBm (197 W)
54
Actual
53
52
51
VDD = 28 Vdc, IDQ = 1300 mA
Pulsed CW, 5 µsec(on), 1 msec(off)
Center Frequency = 2140 MHz
50
49
48
1
10
100
35
36
37
38
39
40
41
42
43
44
45
46
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3
5
Freescale Semiconductor, Inc.
30
−20
−25
VDD = 28 Vdc, IDQ = 1300 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz
@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
−30
20
ACPR
η
15
−35
−40
Gps
10
−45
−40
−50
−60
(dB)
IM3
IM3 (dBc), ACPR (dBc)
25
0
−90
−110
−ACPR @
+ACPR @
3.84 MHz BW 3.84 MHz BW
−IM3 @
3.84 MHz BW
−120
−25
−20
−100
−55
100
10
−70
−80
−50
5
1
3.84 MHz
Channel BW
−30
−15
−10
−5
0
5
10
+IM3 @
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS) AVG. (W−CDMA)
Figure 9. 2-Carrier W-CDMA Spectrum
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
109
MTBF FACTOR (HOURS x AMPS2 )
100
10
PROBABILITY (%)
Freescale Semiconductor, Inc...
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
108
107
106
100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
Figure 11. MTBF Factor versus Junction Temperature
MRF5S21150R3 MRF5S21150SR3
6
MOTOROLA RF DEVICE DATA
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f = 2200 MHz
Zload*
Freescale Semiconductor, Inc...
f = 2080 MHz
Zo = 25 Ω
f = 2080 MHz
f = 2200 MHz
Zsource
VDD = 28 Vdc, IDQ = 1300 mA, Pout = 33 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2080
3.05 - j9.66
1.02 - j2.94
2110
3.97 - j10.31
1.09 - j2.51
2140
4.70 - j11.03
1.16 - j2.46
2170
5.45 - j12.41
1.16 - j2.58
2200
6.18 - j13.04
1.02 - j2.55
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3
7
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Freescale Semiconductor, Inc...
NOTES
MRF5S21150R3 MRF5S21150SR3
8
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc...
NOTES
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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MRF5S21150R3 MRF5S21150SR3
9
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MRF5S21150R3 MRF5S21150SR3
10
MOTOROLA RF DEVICE DATA
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PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
(INSULATOR)
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
Freescale Semiconductor, Inc...
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
(LID)
M
(INSULATOR)
B
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
M
M
(INSULATOR)
B
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE B
NI - 880
MRF5S21150R3
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
T A
S
(LID)
aaa
M
B
M
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
CASE 465C - 02
ISSUE A
NI - 880S
MRF5S21150SR3
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Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
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81-3-3440-3569
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852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF5S21150R3 MRF5S21150SR3
12
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MRF5S21150/D