MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 23 Watts Avg. Power Gain — 13.5 dB Efficiency — 26% IM3 — - 37 dBc ACPR — - 40 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Qualified Up to a Maximum of 32 VDD Operation • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 23 W AVG., 2 x W - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S21100LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S21100LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 80°C, 23 W CW RθJC 0.70 0.76 °C/W (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MRF5S21100LR3 MRF5S21100LSR3 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 0.5 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 µAdc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1050 mAdc) VGS(Q) — 3.8 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.5 Adc) VDS(on) — 0.24 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.5 Adc) gfs — 6 — S Crss — 2.14 — pF Freescale Semiconductor, Inc... OFF CHARACTERISTICS ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12.5 13.5 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 24 26 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 — - 37 - 35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) ACPR — - 40 - 38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL — - 16 -9 dB (1) Part is internally matched both on input and output. MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. R4 + C12 C9 B1 C5 VGG R2 R1 RF INPUT C13 Z3 Z4 VDD + C11 C8 W1 C3 Z8 Z7 Z2 C7 C10 C4 R3 Z1 C6 Z5 Z16 Z10 Z11 Z12 Z13 Z14 Z9 Z6 Z15 C2 Z17 RF OUTPUT C15 C14 C1 Freescale Semiconductor, Inc... DUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.674″ 0.421″ 0.140″ 1.031″ 0.380″ 0.080″ 0.927″ 0.620″ 0.079″ x 0.080″ x 0.080″ x 0.080″ x 0.080″ x 0.643″ x 0.643″ x 0.048″ x 0.048″ x 1.136″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.368″ x 1.136″ Microstrip 0.151″ x 0.393″ Microstrip 0.280″ x 0.220″ Microstrip 0.481″ x 0.142″ Microstrip 0.138″ x 0.080″ Microstrip 0.344″ x 0.080″ Microstrip 0.147″ x 0.099″ Microstrip 0.859″ x 0.080″ Microstrip Arlon GX - 0300 - SS - 22, 30 mil, εr = 2.55 Figure 1. MRF5S21100L Test Circuit Schematic Table 1. MRF5S21100L Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short RF Bead 95F786 Newark C1, C2 8.2 pF Chip Capacitors, B Case 100B8R2CP500X ATC C3 5.6 pF Chip Capacitor, B Case 100B5R6CP500X ATC C4 0.1 µF Chip Capacitor, B Case CDR33BX104AKWS Kemet C5, C7 7.5 pF Chip Capacitors, B Case 100B7R5JP500X ATC C6 1.2 pF Chip Capacitor, B Case 100B1R2BP500X ATC C8 1K pF Chip Capacitor, B Case 100B102JP500X ATC C9, C10 0.56 µF Chip Capacitors, B Case 700A561MP150X Kemet C11 470 µF, 63 V Electrolytic Capacitor 95F4579 Newark C12 100 µF, 50 V Electrolytic Capacitor 51F2913 Newark C13 0.6 - 4.5 pF Gigatrim Variable Capacitor 44F3358 Newark C14 2.7 pF Chip Capacitor, B Case 100B2R7CP500X ATC C15 0.4 - 2.5 pF Gigatrim Variable Capacitor 44F3367 Newark R1 1 kW Chip Resistor D5534M07B1K00R Newark R2 560 kW Chip Resistor CR1206564JT Newark R3, R4 12 W Chip Resistors RM73B2B120JT Garrett Electronics W1 Wire Strap 14 Gauge Jumper Wire MOTOROLA RF DEVICE DATA MRF5S21100LR3 MRF5S21100LSR3 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. C12 C5 C6 C11 C9 VGG R1 B1 R2 R3 R4 C3 C10 C4 VDD W1 C7 C8 Freescale Semiconductor, Inc... C13 C14 C2 CUT OUT AREA C1 C15 MRF5S21100L Rev 03 Figure 2. MRF5S21100L Test Circuit Component Layout MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. 40 35 Gps G ps , POWER GAIN (dB) 13 30 η 12 11 10 IRL 9 8 25 VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1050 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 20 −20 −25 −30 IM3 7 −35 6 −40 ACPR 5 0 IM3 (dBc), ACPR (dBc) 14 −45 2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240 −10 −20 −30 −40 −50 IRL, INPUT RETURN LOSS (dB) 15 η, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS −15 G ps , POWER GAIN (dB) 15 IDQ = 1400 mA 1250 mA 14 1050 mA 850 mA 13 650 mA 12 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 16 1 10 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing −20 −25 −30 IDQ = 1400 mA −35 −40 1250 mA −45 850 mA −50 −55 1 100 10 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power 56 −25 55 Pout , OUTPUT POWER (dBm) −20 3rd Order −35 −40 5th Order −45 7th Order −50 −55 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1050 mA Two−Tone Measurements, Center Frequency = 2140 MHz −60 Ideal P3dB = 51.88 dBm (154.17 W) 54 53 P1dB = 51.18 dBm (131.22 W) 52 Actual 51 50 VDD = 28 Vdc, IDQ = 1050 mA Pulsed CW, 8µsec(on), 1msec(off) Center Frequency = 2140 MHz 49 48 0.1 1 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power −30 1050 mA 650 mA 11 IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - DCMA Broadband Performance 10 34 35 36 37 38 39 40 41 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA 42 MRF5S21100LR3 MRF5S21100LSR3 5 For More Information On This Product, Go to: www.freescale.com 40 VDD = 28 Vdc, IDQ = 1050 mA f1 = 2135 MHz, f2 = 2145 MHz 2x W−CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 30 η −20 −20 −30 IM3 25 −30 20 −35 Gps 15 −40 10 −50 −60 −90 −50 −110 −55 −120 −25 −20 −100 ACPR 5 0 −70 −80 −ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW −IM3 @ 3.84 MHz BW −45 1 3.84 MHz Channel BW −40 −25 (dB) 35 −15 IM3 (dBc), ACPR (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Freescale Semiconductor, Inc. 10 −15 −10 5 10 15 20 25 Figure 9. 2-Carrier W-CDMA Spectrum Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 109 MTBF FACTOR (HOURS x AMPS2 ) 100 10 PROBABILITY (%) 0 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) AVG. W−CDMA Freescale Semiconductor, Inc... −5 +IM3 @ 3.84 MHz BW 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) 108 107 106 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (_C) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 11. MTBF Factor versus Junction Temperature MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com Freescale Semiconductor, Inc. Zo = 10 Ω Zload* f = 2200 MHz f = 2100 MHz Freescale Semiconductor, Inc... Zsource f = 2200 MHz f = 2100 MHz VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. f MHz Zsource Ω Zload Ω 2100 3.4 - j7.2 1.2 - j2.1 2120 3.4 - j6.5 1.4 - j2.3 2160 4.9 - j7.0 2.2 - j3.0 2200 3.4 - j8.6 1.7 - j2.1 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5S21100LR3 MRF5S21100LSR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA MRF5S21100LR3 MRF5S21100LSR3 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb Freescale Semiconductor, Inc... N M T A B M M ccc M T A S M T A B M M aaa M T A (LID) B M (LID) ccc H R (INSULATOR) M (INSULATOR) B M M C F E A T A SEATING PLANE 4X U (FLANGE) 1 K 2X 2 B (FLANGE) D bbb M T A M B M N R (LID) ccc M M T A M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H E A A (FLANGE) MOTOROLA RF DEVICE DATA F T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE C 3 MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE F NI - 780 MRF5S21100LR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465A - 06 ISSUE F NI - 780S MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100LSR3 11 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, MRF5S21100L/D 12 Go to: www.freescale.com