MOTOROLA MRF21045

MOTOROLA
Freescale Semiconductor, Inc.
Order this document
by MRF21045/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
MRF21045LR3
MRF21045LSR3
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — - 37.5 dBc
ACPR — - 41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
2170 MHz, 45 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF21045LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF21045LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
1.65
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 9
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
For More Information On This Product,
Go to: www.freescale.com
MRF21045LR3 MRF21045LSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
3
—
S
Crss
—
1.8
—
pF
OFF CHARACTERISTICS
Freescale Semiconductor, Inc...
ON CHARACTERISTICS (DC)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability
on CCDF.
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
13.5
15
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
21
23.5
—
%
IM3
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz.)
ACPR
—
- 41
- 38
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
- 12
-9
dB
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz.)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 500 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF21045LR3 MRF21045LSR3
2
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) — continued
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
14.9
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
36
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
- 30
—
dBc
Two - Tone Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
—
- 12
—
dB
P1dB
—
50
—
W
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz)
MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3
3
Freescale Semiconductor, Inc.
VGG
R3
R1
R4
B1
+
R2
C5
C4
C3
C7
C2
Z1
Z2
Z3
Z4
Z6
Freescale Semiconductor, Inc...
C1
Z1, Z9
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
C8
C9
Z7
Z8
x 0.084″ Transmission
x 0.084″ Transmission
x 0.176″ Transmission
x 0.320″ Transmission
x 0.045″ Transmission
x 0.650″ Transmission
x 0.140″ Transmission
x 0.084″ Transmission
x 0.055″ Transmission
C10
C11
Line
Line
Line
Line
Line
Line
Line
Line
Line
Z9
RF
OUTPUT
C6
DUT
0.750″
0.160″
1.195″
0.125″
1.100″
0.442″
0.490″
0.540″
0.825″
+
Z10
Z5
RF
INPUT
VDD
L1
+
0.030″ Glass Teflon,
Keene GX - 0300 - 55 - 22, εr = 2.55
Etched Circuit Boards
MRF21045 Rev. 3, CMR
Board
PCB
Figure 1. MRF21045LR3(LSR3) Test Circuit Schematic
Table 1. MRF21045LR3(LSR3) Component Designations and Values
Designators
Description
B1
Short Ferrite Bead, Fair Rite, #2743019447
C1, C2, C6
43 pF Chip Capacitors, ATC #100B430JCA500X
C7
5.6 pF Chip Capacitor, ATC #100B5R6JCA500X
C3, C9
1000 pF Chip Capacitors, ATC #100B102JCA500X
C4, C10
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5
1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050
C8
10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
C11
22 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394
L1
1 Turn, #20 AWG, 0.100″ ID, Motorola
N1, N2
Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10
R1
1.0 kΩ, 1/8 W Chip Resistor
R2
180 kΩ, 1/8 W Chip Resistor
R3, R4
10 Ω, 1/8 W Chip Resistors
MRF21045LR3 MRF21045LSR3
4
MOTOROLA RF DEVICE DATA
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C8
C7
R1
B1 R3
C2
L1
C10 R4
C9
R2
C5
C4 C3
C11
C1
C6
WB1
WB2
Freescale Semiconductor, Inc...
MRF21045
Figure 2. MRF21045LR3(LSR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3
5
Freescale Semiconductor, Inc.
Gps
15
−40
η
10
5
−45
−50
IM3
ACPR
0
−55
1
10
−40
30
3rd Order
20
−50
5th Order
−55
15
η
−60
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
7th Order
−65
4
10
5
6
8
10
30
50 60
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Figure 4. Intermodulation Distortion Products
versus Output Power
700 mA
600 mA
400 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
500 mA
−50
4
6
8
10
30
50 60
28
−10
26
IRL
−15
24
η
−20
22
−25
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 500 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
20
18
−30
16
14
2090
2110
2130
2150
IM3
−35
ACPR
−40
Gps
−45
2170
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2 - Carrier W - CDMA Broadband
Performance
15.5
60
50
14.5
40
14
30
13.5
20
η
VDD = 28 Vdc
IDQ = 500 mA
f = 2170 MHz
13
8
10
30
−26
IMD
39
−27
38
−28
37
−29
36
−30
IDQ = 500 mA
Pout = 45 W (PEP)
f1 = 2135 MHz, f2 = 2145 MHz
35
0
6
50 60
−25
40
10
12.5
4
−24
η
41
η, DRAIN EFFICIENCY (%)
η, DRAIN EFFICIENCY (%)
15
2190
42
Gps
2
25
−45
Pout, OUTPUT POWER (WATTS) PEP
IDQ = 300 mA
−45
35
Pout, OUTPUT POWER (WATTS Avg.) W−CDMA
−30
−40
−35
3
−25
−35
40
20
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
0.5
−30
−31
34
−32
24
25
26
27
28
Pout, OUTPUT POWER (WATTS)
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
Figure 8. Two - Tone Intermodulation
Distortion and Drain Efficiency versus Drain
Supply
MRF21045LR3 MRF21045LSR3
6
η, DRAIN EFFICIENCY (%)
−35
45
29
MOTOROLA RF DEVICE DATA
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IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)
20
−30
IM3 (dBc), ACPR (dBc)
25
−25
IMD, INTERMODULATION DISTORTION (dBc)
−25
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
IMD, INTERMODULATION DISTORTION (dBc)
30
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
40
IDQ = 700 mA
500 mA
−15
η
−20
VDD = 28 Vdc
Pout = 45 W (PEP)
IDQ = 500 mA
f1 = f − 5 MHz, f2 = f + 5 MHz
25
−25
20
400 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
300 mA
−30
IMD
15
14
−35
Gps
10
4
6
8
10
30
50 60
2090
2110
2130
2150
−40
2190
2170
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 9. Two-Tone Power Gain versus
Output Power
Figure 10. Two-Tone Broadband Performance
0
−25
−30
−35
−40
3rd Order
−10
VDD = 28 Vdc
Pout = 45 W (PEP)
IDQ = 500 mA
f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2
−20
(dB)
IMD, INTERMODULATION DISTORTION (dBc)
IRL
30
600 mA
14.5
Freescale Semiconductor, Inc...
−10
35
15.5
15
G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
16
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
5th Order
−45
−30
f1
3.84 MHz BW
f2
3.84 MHz BW
−ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
−IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
−40
−50
7th Order
−50
−60
−55
0.1
1
10
30
−70
−20
−15
−10
−5
0
5
10
15
Df, TONE SEPARATION (MHz)
f, FREQUENCY (MHz)
Figure 11. Intermodulation Distortion
Products versus Two - Tone Spacing
Figure 12. 2-Carrier W-CDMA Spectrum
MOTOROLA RF DEVICE DATA
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20
MRF21045LR3 MRF21045LSR3
7
Freescale Semiconductor, Inc.
f = 2110 MHz
f = 2170 MHz
Zload
Zsource
Freescale Semiconductor, Inc...
f = 2110 MHz
f = 2170 MHz
Zo = 25 Ω
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
18.88 - j8.86
3.11 - j4.18
2140
19.80 - j9.93
3.09 - j3.87
2170
19.68 - j10.44
3.12 - j3.72
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF21045LR3 MRF21045LSR3
8
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc...
NOTES
MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3
9
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MRF21045LR3 MRF21045LSR3
10
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
2X K
3
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
Freescale Semiconductor, Inc...
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
M
F
S
(INSULATOR)
SEATING
PLANE
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
aaa
M
T A
M
H
B
M
CASE 465E - 04
ISSUE E
NI - 400
MRF21045LR3
M
B
2
2X K
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
2X D
bbb M T A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE C
NI - 400S
MRF21045LSR3
MOTOROLA RF DEVICE DATA
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MRF21045LR3 MRF21045LSR3
11
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Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
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Motorola Literature Distribution
P.O. Box 5405, Denver, Colorado 80217
1-800-521-6274 or 480-768-2130
ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF21045LR3 MRF21045LSR3
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MOTOROLA RF DEVICE MRF21045/D
DATA
For More Information On This Product,
Go to: www.freescale.com