TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 FAST-TRANSIENT-RESPONSE 1-A LOW-DROPOUT VOLTAGE REGULATORS FEATURES • • • • • • • • • PWP PACKAGE (TOP VIEW) 1 A Low-Dropout Voltage Regulator Available in 1.5-V, 1.8-V, 2.5-V, 2.7-V, 2.8-V, 3.0-V, 3.3-V, 5.0-V Fixed Output and Adjustable Versions Dropout Voltage Down to 230 mV at 1 A (TPS76850) Ultralow 85 µA Typical Quiescent Current Fast Transient Response 2% Tolerance Over Specified Conditions for Fixed-Output Versions Open Drain Power Good (See TPS767xx for Power-On Reset With 200-ms Delay Option) 8-Pin SOIC and 20-Pin TSSOP (PWP) Package Thermal Shutdown Protection GND/HSINK GND/HSINK GND NC EN IN IN NC GND/HSINK GND/HSINK 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 GND/HSINK GND/HSINK NC NC PG FB/NC OUT OUT GND/HSINK GND/HSINK NC − No internal connection D PACKAGE (TOP VIEW) DESCRIPTION GND EN IN IN This device is designed to have a fast transient response and be stable with 10µF low ESR capacitors. This combination provides high performance at a reasonable cost. TPS76833 DROPOUT VOLTAGE vs FREE-AIR TEMPERATURE 1 8 2 7 3 6 4 5 PG FB/NC OUT OUT LOAD TRANSIENT RESPONSE 103 102 101 ∆ VO - Change in Output Voltage - mV 100 IO = 1 A Co = 10 µF TA = 25°C 50 0 -50 -100 IO = 10 mA 100 I O - Output Current - A VDO - Dropout Voltage - mV 1 10-1 IO = 0 Co = 10 µF 10-2 -60 -40 -20 0 20 40 60 80 100 120 140 TA - Free-Air Temperature - °C 1 0.5 0 0 100 200 300 400 500 600 700 800 900 1000 t - Time - µs Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1999–2004, Texas Instruments Incorporated TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 DESCRIPTION (CONTINUED) Because the PMOS device behaves as a low-value resistor, the dropout voltage is very low (typically 230 mV at an output current of 1 A for the TPS76850) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent of output loading (typically 85 µA over the full range of output current, 0 mA to 1 A). These two key specifications yield a significant improvement in operating life for battery-powered systems. This LDO family also features a sleep mode; applying a TTL high signal to EN (enable) shuts down the regulator, reducing the quiescent current to less than 1 µA at TJ = 25°C. Power good (PG) is an active high output, which can be used to implement a power-on reset or a low-battery indicator. The TPS768xx is offered in 1.5-V, 1.8-V, 2.5-V, 2.7-V, 2.8-V, 3.0-V, 3.3-V, and 5.0-V fixed-voltage versions and in an adjustable version (programmable over the range of 1.2 V to 5.5 V). Output voltage tolerance is specified as a maximum of 2% over line, load, and temperature ranges. The TPS768xx family is available in 8-pin SOIC and 20-pin PWP packages. AVAILABLE OPTIONS TJ TYP TSSOP (PWP) SOIC (D) 5.0 TPS76850Q TPS76850Q 3.3 TPS76833Q TPS76833Q 3.0 TPS76830Q TPS76830Q 2.8 TPS76828Q TPS76828Q 2.7 TPS76827Q TPS76827Q 2.5 TPS76825Q TPS76825Q 1.8 TPS76818Q TPS76818Q 1.5 TPS76815Q TPS76815Q Adjustable 1.2 V to 5.5 V TPS76801Q TPS76801Q 40°C to 125°C (1) PACKAGED DEVICES (1) OUTPUT VOLTAGE (V) The TPS76801 is programmable using an external resistor divider (see application information). The D and PWP packages are available taped and reeled. Add an R suffix to the device type (e.g., TPS76801QDR). TPS768xx VI 6 IN PG 16 PG 7 IN OUT 0.1 µF 5 EN OUT 14 VO 13 + GND Co† 10 µF 3 † See application information section for capacitor selection details. Figure 1. Typical Application Configuration (For Fixed Output Options) 2 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 FUNCTIONAL BLOCK DIAGRAM—Adjustable Version IN EN PG _ + OUT + _ R1 Vref = 1.1834 V FB/NC R2 GND External to the device FUNCTIONAL BLOCK DIAGRAM—Fixed-Voltage Version IN EN PG _ + OUT + _ R1 Vref = 1.1834 V R2 GND 3 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 Terminal Functions TERMINAL NAME NO. I/O DESCRIPTION SOIC PACKAGE GND 1 EN 2 I Regulator ground Enable input IN 3 I Input voltage IN 4 I Input voltage OUT 5 O Regulated output voltage OUT 6 O Regulated output voltage FB/NC 7 I Feedback input voltage for adjustable device (no connect for fixed options) PG 8 O PG output PWP PACKAGE GND/HSINK 1 Ground/heatsink GND/HSINK 2 Ground/heatsink GND 3 LDO ground NC 4 EN 5 I Enable input IN 6 I Input IN 7 I Input NC 8 No connect GND/HSINK 9 Ground/heatsink GND/HSINK 10 Ground/heatsink GND/HSINK 11 Ground/heatsink GND/HSINK 12 Out 13 O Regulated output voltage Out 14 O Regulated output voltage FB/NC 15 I Feedback input voltage for adjustable device (no connect for fixed options) PG 16 O PG output NC 17 No connect NC 18 No connect GND/HSINK 19 Ground/heatsink GND/HSINK 20 Ground/heatsink 4 No connect Ground/heatsink TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) Input voltage range, VI (2) -0.3 V to 13.5 V Voltage range at EN -0.3 V to VI + 0.3 V Maximum PG voltage 16.5 V Peak output current Internally limited Continuous total power dissipation See dissipation rating tables Output voltage, VO (OUT, FB) 7V Operating junction temperature range, TJ -40°C to 125°C Storage temperature range, Tstg -65°C to 150°C ESD rating, HBM 2 kV (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network terminal ground. DISSIPATION RATING TABLE 1 - FREE-AIR TEMPERATURES PACKAGE D AIR FLOW (CFM) TA < 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING 0 568.18 mW 5.6818 mW/°C 312.5 mW 227.27 mW 250 904.15 mW 9.0415 mW/°C 497.28 mW 361.66 mW DISSIPATION RATING TABLE 2 - FREE-AIR TEMPERATURES PACKAGE PWP (1) PWP (2) (1) (2) AIR FLOW (CFM) TA < 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING 0 2.9 W 23.5 mW/°C 1.9 W 1.5 W 300 4.3 W 34.6 mW/°C 2.8 W 2.2 W 0 3W 23.8 mW/°C 1.9 W 1.5 W 300 7.2 W 57.9 mW/°C 4.6 W 3.8 W This parameter is measured with the recommended copper heat sink pattern on a 1-layer PCB, 5-in x 5-in PCB, 1 oz. copper, 2-in x 2-in coverage (4 in2). This parameter is measured with the recommended copper heat sink pattern on an 8-layer PCB, 1.5-in x 2-in PCB, 1 oz. copper, with layers 1, 2, 3, 4, 5, 7, and 8 at 5% coverage (0.9 in2) and layers 3 and 6 at 100% coverage (6 in2). For more information, refer to TI technical brief SLMA002, available for download at www.ti.com. RECOMMENDED OPERATING CONDITIONS Input voltage, VI (1) MIN MAX UNIT 2.7 10 V Output voltage range, VO 1.2 5.5 V Output current, IO (2) 0 1.0 A 40 125 °C Operating junction temperature, TJ (1) (2) (2) To calculate the minimum input voltage for your maximum output current, use the following equation: VI(min)= VO(max) + VDO(max load). Continuous current and operating junction temperature are limited by internal protection circuitry, but it is not recommended that the device operate under conditions beyond those specified in this table for extended periods of time. 5 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 ELECTRICAL CHARACTERISTICS over recommended operating free-air temperature range, VI = VO(typ)+ 1 V, IO = 1 mA, EN = 0 V, Co = 10 µF (unless otherwise noted) PARAMETER TEST CONDITIONS TPS76801 TPS76815 TPS76818 TPS76825 Output voltage (10 µA to 1 A load) (1) TPS76827 TPS76828 TPS76830 TPS76833 TPS76850 Quiescent current (GND current) EN = 0V (1) (1) (2) Output voltage line regulation (∆VO/VO) MIN 5.5 V ≥ VO ≥ 1.5 V, TJ = 25°C 5.5 V ≥ VO ≥ 1.5 V, TJ = -40°C to 125°C 0.98VO 1.764 2.450 2.7 2.744 3.060 3.3 3.234 3.366 5.0 4.900 5.100 85 IO = 1 A, TJ = -40°C to 125°C 125 VO + 1 V < VI≤ 10 V, TJ = 25°C Load regulation Output noise voltage (TPS76818) Output current limit VO = 0 V 1.2 Thermal shutdown junction temperature EN = VI, TJ = 25°C, 2.7 V < VI < 10 V Standby current 2.856 2.940 10 µA < IO < 1 A, TJ = 25°C BW = 200 Hz to 100 kHz, Co = 10 µF, IC = 1 A, TJ = 25°C TPS76801 %/V 3 mV 55 µVrms 1.7 Power supply ripple rejection PG (1) °C 1 µA 2 (2) 6 µA nA 1.7 V 0.9 f = 1 KHz, Co = 10 µF, TJ = 25°C 60 Minimum input voltage for valid PG IO(PG) = 300 µA 1.1 Trip threshold voltage VO decreasing Hysteresis voltage Measured at VO 0.5 Output low voltage VI = 2.7 V, IO(PG) = 1 mA 0.15 Leakage current V(PG) = 5 V 92 Minimum IN operating voltage is 2.7 V or VO(typ) + 1 V, whichever is greater. Maximum IN voltage 10 V. V Imax2.7V Line Reg. (mV) (% V) V O 1000 100 If VO≤ 1.8 V then VImax = 10 V, VImin = 2.7 V: V ImaxVO1V Line Reg. (mV) (% V) V O 1000 100 If VO≥ 2.5 V then VImax = 10 V, VImin = VO + 1 V: A 150 Low level enable input voltage (1) 2 10 FB = 1.5 V High level enable input voltage µA 0.01 EN = VI, TJ = -40°C to 125°C, 2.7 V < VI < 10 V FB input current V 3.0 TJ = 25°C, 6 V < VIN < 10 V TJ = -40°C to 125°C, 6 V < VIN < 10 V 2.754 2.8 TJ = 25°C, 4.3 V < VIN < 10 V TJ = -40°C to 125°C, 4.3 V < VIN < 10 V 2.550 2.646 TJ = 25°C, 4 V < VIN < 10 V TJ = -40°C to 125°C, 4 V < VIN < 10 V 1.836 2.5 TJ = 25°C, 3.8 V < VIN < 10 V TJ = -40°C to 125°C, 3.8 V < VIN < 10 V 1.530 1.8 TJ = 25°C, 3.7 V < VIN < 10 V TJ = -40°C to 125°C, 3.7 V < VIN < 10 V 1.02VO 1.470 TJ = 25°C, 3.5 V < VIN < 10 V TJ = -40°C to 125°C, 3.5 V < VIN < 10 V UNIT 1.5 TJ = 25°C, 2.8 V < VIN < 10 V TJ = -40°C to 125°C, 2.8 V < VIN < 10 V MAX VO TJ = 25°C, 2.7 V < VIN < 10 V TJ = -40°C to 125°C, 2.7 V < VIN < 10 V TYP V dB V 98 %VO %VO 0.4 V 1 µA TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 ELECTRICAL CHARACTERISTICS (continued) over recommended operating free-air temperature range, VI = VO(typ)+ 1 V, IO = 1 mA, EN = 0 V, Co = 10 µF (unless otherwise noted) PARAMETER Input current (EN) TPS76828 TPS76830 Dropout voltage (3) TPS76833 TPS76850 (3) TEST CONDITIONS MIN TYP MAX EN = 0 V 1 0 1 EN = VI 1 IO = 1 A, TJ = 25°C 500 825 450 IO = 1 A, TJ = -40°C to 125°C IO = 1 A, TJ = 25°C µA 1 IO = 1 A, TJ = -40°C to 125°C IO = 1 A, TJ = 25°C UNIT 675 350 IO = 1 A, TJ = -40°C to 125°C mV 575 IO = 1 A, TJ = 25°C 230 IO = 1 A, TJ = -40°C to 125°C 380 IN voltage equals VO(typ) - 100 mV; TPS76801 output voltage set to 3.3 V nominal with external resistor divider. TPS76815, TPS76818, TPS76825, and TPS76827 dropout voltage limited by input voltage range limitations (i.e., TPS76830 input voltage needs to drop to 2.9 V for purpose of this test). Table of Graphs FIGURE VO Output voltage vs Output current 2, 3, 4 vs Free-air temperature 5, 6, 7 Ground current vs Free-air temperature 8, 9 Power supply ripple rejection vs Frequency 10 Output spectral noise density vs Frequency 11 Input voltage (min) vs Output voltage 12 Zo Output impedance vs Frequency 13 VDO Dropout voltage vs Free-air temperature 14 Line transient response 15, 17 Load transient response VO 16, 18 Output voltage vs Time 19 Dropout voltage vs Input voltage 20 Equivalent series resistance (ESR) vs Output current 22 - 25 7 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 TYPICAL CHARACTERISTICS TPS76833 OUTPUT VOLTAGE vs OUTPUT CURRENT TPS76815 OUTPUT VOLTAGE vs OUTPUT CURRENT 3.2835 1.4985 VI = 4.3 V TA = 25°C 1.4980 3.2825 VO − Output Voltage − V VO − Output Voltage − V 3.2830 3.2820 3.2815 3.2810 3.2805 1.4970 1.4965 1.4960 1.4950 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IO − Output Current − A 0.8 0.9 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 IO − Output Current − A Figure 2. Figure 3. TPS76825 OUTPUT VOLTAGE vs OUTPUT CURRENT TPS76833 OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 2.4960 3.32 VI = 3.5 V TA = 25°C 2.4955 VI = 4.3 V 3.31 VO − Output Voltage − V 2.4950 VO − Output Voltage − V 1.4975 1.4955 3.2800 2.4945 2.4940 2.4935 2.4930 3.30 3.29 IO = 1 A IO = 1 mA 3.28 3.27 3.26 2.4925 2.4920 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IO − Output Current − A Figure 4. 8 VI = 2.7 V TA = 25°C 0.8 0.9 1 3.25 −60 −40 −20 0 20 40 60 80 100 120 140 TA − Free-Air Temperature − °C Figure 5. TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 TYPICAL CHARACTERISTICS (continued) TPS76815 OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE TPS76825 OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 1.515 2.515 VI = 3.5 V VI = 2.7 V 2.510 VO − Output Voltage − V VO − Output Voltage − V 1.510 1.505 1.500 IO = 1 A IO = 1 mA 1.495 1.490 2.505 2.500 IO = 1 A 2.495 IO = 1 mA 2.490 2.485 1.485 −60 −40 −20 0 20 40 60 80 2.480 −60 −40 100 120 140 TA − Free-Air Temperature − °C −20 0 20 40 60 80 100 120 TA − Free-Air Temperature − °C Figure 6. Figure 7. TPS76833 GROUND CURRENT vs FREE-AIR TEMPERATURE TPS76815 GROUND CURRENT vs FREE-AIR TEMPERATURE 92 100 VI = 2.7 V 90 VI = 4.3 V 95 86 84 82 IO = 1 mA 80 IO = 1 A 78 IO = 500 mA 76 Ground Current − µ A Ground Current − µ A 88 90 IO = 1 A IO = 1 mA 85 IO = 500 mA 80 74 72 −60 −40 −20 0 20 40 60 80 100 120 140 TA − Free-Air Temperature − °C Figure 8. 75 −60 −40 −20 0 20 40 60 80 100 120 140 TA − Free-Air Temperature − °C Figure 9. 9 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 TYPICAL CHARACTERISTICS (continued) TPS76833 POWER SUPPLY RIPPLE REJECTION vs FREQUENCY TPS76833 OUTPUT SPECTRAL NOISE DENSITY vs FREQUENCY 10−5 VI = 4.3 V Co = 10 µF IO = 1 A TA = 25°C 80 70 Output Spectral Noise Density − µV Hz PSRR − Power Supply Ripple Rejection − dB 90 60 50 40 30 20 10 0 −10 10 100 1k 10k 100k VI = 4.3 V Co = 10 µF TA = 25°C IO = 7 mA 10−6 IO = 1 A 10−7 10−8 102 1M 103 f − Frequency − Hz Figure 10. Figure 11. INPUT VOLTAGE (MIN) vs OUTPUT VOLTAGE TPS76833 OUTPUT IMPEDANCE vs FREQUENCY 0 VI = 4.3 V Co = 10 µF TA = 25°C IO = 1 A Zo − Output Impedance − Ω VI − Input Voltage (Min) − V TA = 25°C TA = 125°C 3 TA = −40°C 2.7 1.75 2 2.25 2.5 2.75 VO − Output Voltage − V Figure 12. 10 105 f − Frequency − Hz 4 2 1.5 104 3 3.25 3.5 IO = 1 mA 10−1 IO = 1 A 10−2 101 102 103 104 f − Frequency − kHz Figure 13. 105 106 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 TYPICAL CHARACTERISTICS (continued) TPS76833 DROPOUT VOLTAGE vs FREE-AIR TEMPERATURE VI − Input Voltage − V 103 IO = 1 A 102 101 3.7 2.7 IO = 10 mA 100 ∆ VO − Change in Output Voltage − mV VDO − Dropout Voltage − mV TPS76815 LINE TRANSIENT RESPONSE 10−1 IO = 0 Co = 10 µF 10−2 −60 −40 −20 0 20 40 60 80 100 120 140 10 0 Co = 10 µF TA = 25°C −10 0 20 40 60 TA − Free-Air Temperature − °C Figure 15. TPS76815 LOAD TRANSIENT RESPONSE TPS76833 LINE TRANSIENT RESPONSE ∆ VO − Change in Output Voltage − mV Co = 10 µF TA = 25°C 50 0 −50 VI − Input Voltage − V Figure 14. 100 ∆ VO − Change in Output Voltage − mV I O − Output Current − A Co = 10 µF TA = 25°C 5.3 4.3 −100 1 0.5 0 0 80 100 120 140 160 180 200 t − Time − µs 100 200 300 400 500 600 700 800 900 1000 t − Time − µs Figure 16. 10 0 −10 0 20 40 60 80 100 120 140 160 180 200 t − Time − µs Figure 17. 11 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 TYPICAL CHARACTERISTICS (continued) TPS76833 OUTPUT VOLTAGE vs TIME (AT START-UP) TPS76833 LOAD TRANSIENT RESPONSE VO− Output Voltage − V 4 Co = 10 µF TA = 25°C 50 0 −50 −100 Co = 10 µF IO = 1 A TA = 25°C 3 2 1 0 1 Enable Pulse − V I O − Output Current − A ∆ VO − Change in Output Voltage − mV 100 0.5 0 0 100 200 300 400 500 600 700 800 900 1000 t − Time − µs 0 0.1 0.2 0.3 Figure 18. Figure 19. TPS76801 DROPOUT VOLTAGE vs INPUT VOLTAGE 900 IO = 1 A VDO − Dropout Voltage − mV 800 700 600 500 TA = 25°C 400 TA = 125°C 300 200 TA = −40°C 100 0 2.5 3 3.5 4 VI − Input Voltage − V Figure 20. 12 0.4 0.5 0.6 0.7 0.8 t − Time − ms 4.5 5 0.9 1 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 TYPICAL CHARACTERISTICS (continued) VI To Load IN OUT + EN Co GND RL ESR Figure 21. Test Circuit for Typical Regions of Stability (Figure 22 through Figure 25) (Fixed Output Options) 13 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 Equivalent series resistance (ESR) refers to the total series resistance, including the ESR of the capacitor, any series resistance added externally, and PWB trace resistance to CO. TYPICAL REGION OF STABILITY EQUIVALENT SERIES RESISTANCE vs OUTPUT CURRENT TYPICAL REGION OF STABILITY EQUIVALENT SERIES RESISTANCE vs OUTPUT CURRENT 10 ESR − Equivalent Series Resistance − Ω ESR − Equivalent Series Resistance − Ω 10 Region of Instability 1 VO = 3.3 V Co = 4.7 µF VI = 4.3 V TA = 25°C Region of Stability 0.1 VO = 3.3 V Co = 4.7 µF VI = 4.3 V TJ = 125°C Region of Stability 0.1 Region of Instability 0.01 0 200 400 600 800 0 1000 200 400 600 800 IO − Output Current − mA IO − Output Current − mA Figure 22. Figure 23. TYPICAL REGION OF STABILITY EQUIVALENT SERIES RESISTANCE vs OUTPUT CURRENT TYPICAL REGION OF STABILITY EQUIVALENT SERIES RESISTANCE vs OUTPUT CURRENT 1000 10 ESR − Equivalent Series Resistance − Ω 10 ESR − Equivalent Series Resistance − Ω 1 Region of Instability 0.01 Region of Instability 1 VO = 3.3 V Co = 22 µF VI = 4.3 V TA = 25°C Region of Stability 0.1 Region of Instability Region of Instability 1 VO = 3.3 V Co = 22 µF VI = 4.3 V TJ = 125°C Region of Stability 0.1 Region of Instability 0.01 0.01 0 14 Region of Instability 200 400 600 800 1000 0 200 400 600 IO − Output Current − mA IO − Output Current − mA Figure 24. Figure 25. 800 1000 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 APPLICATION INFORMATION The TPS768xx family includes eight fixed-output voltage regulators (1.5 V, 1.8 V, 2.5 V, 2.7 V, 2.8 V, 3.0 V, 3.3 V, and 5.0 V), and offers an adjustable device, the TPS76801 (adjustable from 1.2 V to 5.5 V). DEVICE OPERATION The TPS768xx features very low quiescent current, which remains virtually constant even with varying loads. Conventional LDO regulators use a pnp pass element, the base current of which is directly proportional to the load current through the regulator (IB = IC/β). The TPS768xx uses a PMOS transistor to pass current; because the gate of the PMOS is voltage driven, operating current is low and invariable over the full load range. Another pitfall associated with the pnp-pass element is its tendency to saturate when the device goes into dropout. The resulting drop in β forces an increase in IB to maintain the load. During power up, this translates to large start-up currents. Systems with limited supply current may fail to start up. In battery-powered systems, it means rapid battery discharge when the voltage decays below the minimum required for regulation. The TPS768xx quiescent current remains low even when the regulator drops out, eliminating both problems. The TPS768xx family also features a shutdown mode that places the output in the high-impedance state (essentially equal to the feedback-divider resistance) and reduces quiescent current to 2 µA. If the shutdown feature is not used, EN should be tied to ground. MINIMUM LOAD REQUIREMENTS The TPS768xx family is stable even at zero load; no minimum load is required for operation. FB - PIN CONNECTION (ADJUSTABLE VERSION ONLY) The FB pin is an input pin to sense the output voltage and close the loop for the adjustable option. The output voltage is sensed through a resistor divider network to close the loop as shown in Figure 27. Normally, this connection should be as short as possible; however, the connection can be made near a critical circuit to improve performance at that point. Internally, FB connects to a high-impedance wide-bandwidth amplifier and noise pickup feeds through to the regulator output. Routing the FB connection to minimize/avoid noise pickup is essential. EXTERNAL CAPACITOR REQUIREMENTS An input capacitor is not usually required; however, a ceramic bypass capacitor (0.047 µF or larger) improves load transient response and noise rejection if the TPS768xx is located more than a few inches from the power supply. A higher-capacitance electrolytic capacitor may be necessary if large (hundreds of milliamps) load transients with fast rise times are anticipated. Like all low dropout regulators, the TPS768xx requires an output capacitor connected between OUT and GND to stabilize the internal control loop. The minimum recommended capacitance value is 10 µF and the ESR (equivalent series resistance) must be between 60 mΩ and 1.5 Ω. Capacitor values 10 µF or larger are acceptable, provided the ESR is less than 1.5Ω . Solid tantalum electrolytic, aluminum electrolytic, and multilayer ceramic capacitors are all suitable, provided they meet the requirements described above. Most of the commercially available 10 µF surface-mount ceramic capacitors, including devices from Sprague and Kemet, meet the ESR requirements stated above. 15 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 APPLICATION INFORMATION (continued) TPS768xx 6 VI IN 7 C1 0.1 µF PG 16 PG 250 kΩ IN OUT 5 EN OUT 14 VO 13 + Co 10 µF GND 3 Figure 26. Typical Application Circuit (Fixed Versions) The output voltage of the TPS76801 adjustable regulator is programmed using an external resistor divider as shown in Figure 27. The output voltage is calculated using: V O V ref 1 R1 R2 where: Vref = 1.1834 V typ (the internal reference voltage) (1) Resistors R1 and R2 should be chosen for approximately 50-µA divider current. Lower value resistors can be used but offer no inherent advantage and waste more power. Higher values should be avoided as leakage currents at FB increase the output voltage error. The recommended design procedure is to choose R2 = 30.1 kΩ to set the divider current at 50 µA and then calculate R1 using: R1 V V O 1 ref R2 (2) OUTPUT VOLTAGE PROGRAMMING GUIDE TPS76801 VI 0.1 µF IN PG 250 kΩ ≥ 1.7 V ≤ 0.9 V OUTPUT VOLTAGE PG EN OUT VO R1 FB / NC GND R1 R2 UNIT 2.5 V 33.2 30.1 kΩ 3.3 V 53.6 30.1 kΩ 3.6 V 61.9 30.1 kΩ 4.75 V 90.8 30.1 kΩ R2 Figure 27. TPS76801 Adjustable LDO Regulator Programming POWER-GOOD INDICATOR The TPS768xx features a power-good (PG) output that can be used to monitor the status of the regulator. The internal comparator monitors the output voltage: when the output drops to between 92% and 98% of its nominal regulated value, the PG output transistor turns on, taking the signal low. The open-drain output requires a pullup resistor. If not used, it can be left floating. PG can be used to drive power-on reset circuitry or used as a low-battery indicator. PG does not assert itself when the regulated output voltage falls out of the specified 2% tolerance, but instead reports an output voltage low, relative to its nominal regulated value. 16 TPS76815Q, TPS76818Q, TPS76825Q TPS76827Q, TPS76828Q, TPS76830Q TPS76833Q, TPS76850Q, TPS76801Q www.ti.com SLVS211J – JUNE 1999 – REVISED OCTOBER 2004 APPLICATION INFORMATION (continued) REGULATOR PROTECTION The TPS768xx PMOS-pass transistor has a built-in back diode that conducts reverse currents when the input voltage drops below the output voltage (e.g., during power down). Current is conducted from the output to the input and is not internally limited. When extended reverse voltage is anticipated, external limiting may be appropriate. The TPS768xx also features internal current limiting and thermal protection. During normal operation, the TPS768xx limits output current to approximately 1.7 A. When current limiting engages, the output voltage scales back linearly until the overcurrent condition ends. While current limiting is designed to prevent gross device failure, care should be taken not to exceed the power dissipation ratings of the package. If the temperature of the device exceeds 150°C (typ), thermal-protection circuitry shuts it down. Once the device has cooled below 130°C (typ), regulator operation resumes. POWER DISSIPATION AND JUNCTION TEMPERATURE Specified regulator operation is assured to a junction temperature of 125°C; the maximum junction temperature should be restricted to 125°C under normal operating conditions. This restriction limits the power dissipation the regulator can handle in any given application. To ensure the junction temperature is within acceptable limits, calculate the maximum allowable dissipation, PD(max), and the actual dissipation, PD, which must be less than or equal to PD(max). The maximum-power-dissipation limit is determined using the following equation: T max T A P J D(max) R JA where: TJmax is the maximum allowable junction temperature. RθJA is the thermal resistance junction-to-ambient for the package, i.e., 172°C/W for the 8-terminal SOIC and 32.6°C/W for the 20-terminal PWP with no airflow. TA is the ambient temperature. (3) The regulator dissipation is calculated using: P D V V I I O O (4) Power dissipation resulting from quiescent current is negligible. Excessive power dissipation will trigger the thermal protection circuit. 17 PACKAGE OPTION ADDENDUM www.ti.com 19-May-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS76801QD ACTIVE SOIC D 8 TPS76801QDR ACTIVE SOIC D TPS76801QDRG4 ACTIVE SOIC TPS76801QPWP ACTIVE TPS76801QPWPR 75 Lead/Ball Finish MSL Peak Temp (3) Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM HTSSOP PWP 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76801QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76815QD ACTIVE SOIC D 8 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76815QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76815QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76815QPWP ACTIVE HTSSOP PWP 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76815QPWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76815QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76818QD ACTIVE SOIC D 8 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76818QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76818QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76818QPWP ACTIVE HTSSOP PWP 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76818QPWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76818QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76825QD ACTIVE SOIC D 8 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76825QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76825QPWP ACTIVE HTSSOP PWP 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76825QPWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76825QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76827QD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76827QDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 70 75 70 75 70 75 70 Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 19-May-2005 Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS76827QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76827QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76827QPWP ACTIVE HTSSOP PWP 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76827QPWPG4 ACTIVE HTSSOP PWP 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76827QPWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76827QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76828QD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76828QDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76828QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76828QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76828QPWP ACTIVE HTSSOP PWP 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76828QPWPG4 ACTIVE HTSSOP PWP 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76828QPWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76828QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76830QD ACTIVE SOIC D 8 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76830QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76830QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76830QPWP ACTIVE HTSSOP PWP 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76830QPWPG4 ACTIVE HTSSOP PWP 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76830QPWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76830QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76833QD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76833QDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76833QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76833QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76833QPWP ACTIVE HTSSOP PWP 20 CU NIPDAU Level-2-260C-1 YEAR 75 70 Addendum-Page 2 Green (RoHS & no Sb/Br) Lead/Ball Finish MSL Peak Temp (3) PACKAGE OPTION ADDENDUM www.ti.com 19-May-2005 Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS76833QPWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76833QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76850QD ACTIVE SOIC D 8 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76850QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76850QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS76850QPWP ACTIVE HTSSOP PWP 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76850QPWPR ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS76850QPWPRG4 ACTIVE HTSSOP PWP 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 75 70 Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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