ONSEMI NTLJF3117PT1G

NTLJF3117P
Power MOSFET and
Schottky Diode
−20 V, −4.1 A, P−Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm,
mCool] Package
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Features
• FETKYt Configuration with MOSFET plus Low Vf Schottky Diode
• mCOOLt Package Provides Exposed Drain Pad for Excellent
•
•
•
•
•
Thermal Conduction
2x2 mm Footprint Same as SC−88 Package Design
Independent Pinout Provides Circuit Design Flexibility
Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
High Current Schottky Diode: 2 A Current Rating
This is a Pb−Free Device
MOSFET
V(BR)DSS
RDS(on) MAX
ID MAX (Note 1)
100 mW @ −4.5 V
−20 V
−4.1 A
135 mW @ −2.5 V
200 mW @ −1.8 V
SCHOTTKY DIODE
VR MAX
VF TYP
IF MAX
30 V
0.47 V
2.0 A
Applications
• Optimized for Portable Applications like Cell Phones, Digital
Cameras, Media Players, etc.
• DC−DC Buck Circuit
• Li−Ion Battery Applications
• Color Display and Camera Flash Regulators
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−3.3
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−2.4
t≤5s
TA = 25°C
−4.1
Steady
State
PD
1.5
ID
−2.3
Power Dissipation
(Note 2)
Pulsed Drain Current
2.3
TA = 25°C
Steady
State
W
TA = 25°C
t≤5s
Continuous Drain
Current (Note 2)
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
A
−1.6
PD
0.71
W
IDM
−20
A
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
−1.9
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz Cu.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 2
A
1
S
K
P−CHANNEL MOSFET
SCHOTTKY DIODE
MARKING
DIAGRAM
1
6
2 JHMG 5
3
4
G
1
WDFN6
CASE 506AN
JH = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
K
A
1
N/C
2
6
K
5
G
4
S
D
D
3
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
NTLJF3117P/D
NTLJF3117P
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
VRRM
30
V
DC Blocking Voltage
VR
30
V
Average Rectified Forward Current
IF
2.0
A
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
83
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
54
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
177
Peak Repetitive Reverse Voltage
THERMAL RESISTANCE RATINGS
Parameter
°C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu.
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250 mA, Ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VDS = −16 V, VGS = 0 V
9.95
TJ = 25°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ
mV/°C
−1.0
TJ = 85°C
IGSS
Gate−to−Source Leakage Current
V
mA
−10
±100
nA
−1.0
V
ON CHARACTERISTICS (Note 5)
Drain−to−Source On−Resistance
−0.7
2.44
RDS(on)
Forward Transconductance
−0.4
gFS
mV/°C
VGS = −4.5, ID = −2.0 A
75
100
mW
VGS = −2.5, ID = −2.0 A
101
135
VGS = −1.8, ID = −1.6 A
150
200
VDS = −5.0 V, ID = −2.0 A
3.1
S
531
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
Output Capacitance
COSS
91
Reverse Transfer Capacitance
CRSS
56
Total Gate Charge
QG(TOT)
5.5
Threshold Gate Charge
QG(TH)
6.2
nC
0.7
VGS = −4.5 V, VDS = −10 V,
ID = −2.0 A
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.4
RG
8.8
W
td(ON)
5.2
ns
Gate Resistance
1.0
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = −4.5 V, VDD = −5.0 V,
ID = −1.0 A, RG = 6.0 W
tf
13.2
13.7
19.1
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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NTLJF3117P
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
td(ON)
tr
Turn−Off Delay Time
Fall Time
td(OFF)
ns
5.5
15
VGS = −4.5 V, VDD = −10 V,
ID = −2.0 A, RG = 2.0 W
19.8
tf
21.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
VSD
Reverse Recovery Time
TJ = 25°C
−0.75
TJ = 125°C
−0.64
tRR
ta
Discharge Time
VGS = 0 V, IS = −1.0 A
tb
−1.0
V
16.2
10.6
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A
ns
5.6
QRR
5.7
nC
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
Parameter
VF
IF = 0.1 A
Min
0.34
0.39
V
IF = 1.0 A
0.47
0.53
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
17
20
VR = 20 V
3.0
8.0
VR = 10 V
2.0
4.5
Typ
Max
Unit
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.22
0.35
IF = 1.0 A
0.40
0.50
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
0.22
2.5
VR = 20 V
0.11
1.6
VR = 10 V
0.06
1.2
Typ
Max
Unit
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
Symbol
Test Conditions
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.2
0.29
IF = 1.0 A
0.4
0.47
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
2.0
20
VR = 20 V
1.1
10.9
VR = 10 V
0.63
8.4
Typ
Max
Parameter
Min
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Capacitance
Symbol
Test Conditions
C
VR = 5.0 V, f = 1.0 MHz
Min
7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz cu.
9. Pulse Test: pulse width v 300 ms, duty cycle v2%.
10. Switching characteristics are independent of operating junction temperatures.
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3
38
Unit
pF
NTLJF3117P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −1.9 V to −6 V
−1.8 V
4
3.5
−1.7 V
3
2.5
−1.6 V
2
−1.5 V
1.5
1
−1.4 V
0.5
−1.3 V
−1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
−ID, DRAIN CURRENT (AMPS)
4.5
5
TJ = 25°C
0.5
1
2
1.5
3
2.5
3.5
4
4
3
2
TJ = 25°C
1
TJ = 125°C
0
4.5
0
1.5
2
2.5
3
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.1
VGS = −4.5 V
0.09
TJ = 100°C
0.08
TJ = 25°C
0.07
0.06
TJ = −55°C
0.05
0.04
1.0
1.5
2.0
2.5
0.15
TJ = 25°C
VGS = −2.5 V
0.1
VGS = −4.5 V
0.05
0
1
2
−ID, DRAIN CURRENT (AMPS)
3
4
5
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
10000
ID = −2.2 A
VGS = −4.5 V
VGS = 0 V
1.4
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = −55°C
1
0.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
5
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
TJ = 150°C
1000
TJ = 100°C
100
10
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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4
20
NTLJF3117P
VDS = 0 V VGS = 0 V
C, CAPACITANCE (pF)
1000
TJ = 25°C
Ciss
800
600
400
Crss
Coss
200
0
5
0
VGS
5
10
15
5
4
16
3
VDS
12
VGS
QGS
2
QGD
8
1
4
ID = −2.2 A
TJ = 25°C
0
20
0
1
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
2
3
4
5
QG, TOTAL GATE CHARGE (nC)
0
6
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
3
−Is, SOURCE CURRENT (AMPS)
VDD = −15 V
ID = −2.2 A
VGS = −4.5 V
100
tf
tr
td(off)
10
td(on)
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
2.5
2
1.5
1
0.5
0
0
1
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
TJ = 150°C
10
Figure 10. Diode Forward Voltage versus Current
TC = 25°C
TJ = 150°C
SINGLE PULSE
10 ms
100 ms
1 ms
1
0.1
0.01
10 ms
*See Note 2 on Page 1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
TJ = 25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
100
−ID, DRAIN CURRENT (AMPS)
t, TIME (ns)
20
QT
−VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1200
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
dc
1
10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NTLJF3117P
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1000
100
D = 0.5
0.2
0.1
*See Note 2 on Page 1
10
P(pk)
0.05
0.02
1 0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 12. Thermal Response
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1
RqJA(t) = r(t) RqJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
10
100
1000
NTLJF3117P
10
TJ = 85°C
1.0
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10
1.0
TJ = 85°C
TJ = 125°C
0.1
0.1
0.2
TJ = 25°C
0.3
0.4
0.5
0.6
0.7
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 13. Typical Forward Voltage
Figure 14. Maximum Forward Voltage
100E−3
100E−3
10E−3
TJ = 125°C
1.0E−3
10E−6
TJ = 125°C
10E−3
1.0E−3
TJ = 85°C
100E−6
TJ = 85°C
100E−6
TJ = 25°C
TJ = 25°C
10E−6
1.0E−6
1.0E−6
100E−9
0.9
1.0E+0
I R , MAXIMUM REVERSE CURRENT (AMPS)
1.0E+0
I R , REVERSE CURRENT (AMPS)
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF , INSTANTANEOUS FORWARD CURRENT (AMPS
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
10
20
30
100E−9
0
10
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Typical Reverse Current
Figure 16. Maximum Reverse Current
30
ORDERING INFORMATION
Package
Shipping †
NTLJF3117PT1G
WDFN6
(Pb−Free)
3000 / Tape & Reel
NTLJF3117PTAG
WDFN6
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
NTLJF3117P
PACKAGE DIMENSIONS
WDFN6 2x2
CASE 506AN−01
ISSUE C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
B
ÍÍÍ
ÍÍÍ
E
PIN ONE
REFERENCE
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
J
0.10 C
2X
0.10 C
2X
A3
0.10 C
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
2.00 BSC
0.57
0.77
2.00 BSC
0.90
1.10
0.65 BSC
0.25 REF
0.20
0.30
0.15 REF
A
6X
0.08 C
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
A1
C
SEATING
PLANE
D2
D2
2.30
6X
6X
0.35
0.43
6X
e
L
1
4X
3
1
0.65
PITCH
2X E2
6X
K
4
6
6X
J
BOTTOM VIEW
b
0.25
6X
0.10 C A
0.05 C
B
2X
NOTE 3
0.72
1.05
DIMENSIONS: MILLIMETERS
FETKY is a registered trademark of International Rectifier Corporation.
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
NTLJF3117P/D