ONSEMI NTLUF4189NZ

NTLUF4189NZ
Power MOSFET and
Schottky Diode
30 V, N−Channel with 0.5 A Schottky
Barrier Diode, 1.6 x 1.6 x 0.55 mm
mCoolt Package
Features
•
•
•
•
•
•
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Low Qg and Capacitance to Minimize Switching Losses
Low Profile UDFN 1.6x1.6 mm for Board Space Saving
Low VF Schottky Diode
ESD Protected Gate
This is a Halide−Free Device
This is a Pb−Free Device
MOSFET
V(BR)DSS
30 V
Applications
Value
Units
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGS
±8.0
V
ID
1.5
A
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
TA = 85°C
1.1
t≤5s
TA = 25°C
1.9
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Steady
State
TA = 25°C
PD
TA = 85°C
30 V
0.52 V
0.5 A
A
G
K
Schottky Diode
MARKING
DIAGRAM
UDFN6
CASE 517AT
mCOOLt
6
A
1.2
0.9
PD
0.5
W
Pulsed Drain Current
tp = 10 ms
IDM
8.0
A
MOSFET Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
150
°C
Schottky Operating Junction & Storage
Temperature
TJ,
TSTG
-55 to
125
°C
Source Current (Body Diode) (Note 2)
IS
1.5
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
ESD
1000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
March, 2009 − Rev. 1
0.5 A
W
0.8
TA = 25°C
© Semiconductor Components Industries, LLC, 2009
350 mW @ 2.5 V
S
N−Channel MOSFET
Power Dissipation (Note 2)
Gate-to-Source ESD Rating
(HBM) per JESD22−A114F
0.5 A
IF MAX
1.3
ID
250 mW @ 3.0 V
D
Symbol
TA = 25°C
1.5 A
VF TYP
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Steady
State
200 mW @ 4.5 V
VR MAX
Products, such as Cell Phones, PMP, DSC, GPS, and others
Continuous Drain
Current (Note 1)
ID MAX
SCHOTTKY DIODE
• DC-DC Boost Converter
• Color Display and Camera Flash Regulators
• Optimized for Power Management Applications for Portable
Parameter
RDS(on) MAX
1
1
1
AA MG
G
AA = Specific Device Code
M = Date Code
G = Pb−Free Package
PIN CONNECTIONS
A
1
N/C
2
D
3
K
6
K
5
G
4
S
D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTLUF4189NZ/D
NTLUF4189NZ
DEVICE ORDERING INFORMATION
Package
Shipping†
NTLUF4189NZTAG
UDFN6
(Pb−Free)
3000 / Tape & Reel
NTLUF4189NZTBG
UDFN6
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Schottky Diode Maximum Ratings (TJ = 25°C unless otherwise stated)
Parameter
Peak Repetitive Reverse Voltage
Symbol
Value
Units
VRRM
30
V
DC Blocking Voltage
VR
30
V
Average Rectified Forward Current
IF
0.5
A
Symbol
Max
Units
Junction-to-Ambient – Steady State (Note 3)
RθJA
155
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 3)
RθJA
100
Junction-to-Ambient – Steady State min Pad (Note 4)
RθJA
245
Thermal Resistance Ratings
Parameter
MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 μA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 μA, ref to 25°C
Typ
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
IDSS
VGS = 0 V,
VDS = 24 V
V
22
mV/°C
TJ = 25°C
1.0
TJ = 85°C
10
IGSS
VDS = 0 V, VGS = ± 8.0 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
10
mA
1.5
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain−to−Source On Resistance
Forward Transconductance
0.4
VGS(TH)/TJ
RDS(on)
gFS
1.1
3.0
mV/°C
VGS = 4.5 V, ID = 1.5 A
145
200
mW
VGS = 3.0 V, ID = 0.5 A
185
250
VGS = 2.5 V, ID = 0.5 A
220
350
VDS = 4.0 V, ID = 0.15 A
1.1
S
95
pF
CHARGES & CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1 MHz,
VDS = 15 V
15
10
Total Gate Charge
QG(TOT)
1.4
Threshold Gate Charge
QG(TH)
0.2
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
3.
4.
5.
6.
VGS = 4.5 V, VDS = 15 V;
ID = 1.5 A
0.4
0.4
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
Switching characteristics are independent of operating junction temperatures
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2
3.0
nC
NTLUF4189NZ
MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
ns
7.0
4.5
VGS = 4.5 V, VDD = 15 V,
ID = 1A, RG = 6 W
10.2
tf
1.2
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
VSD
Reverse Recovery Charge
TJ = 25°C
0.8
TJ = 85°C
0.75
tRR
ta
Discharge Time
VGS = 0 V,
IS = 1A
tb
1.2
V
ns
10.5
8.9
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 1 A
1.6
QRR
2.1
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Maximum Instantaneous Forward
Voltage
VF
Maximum Instantaneous
Reverse Current
IR
Parameter
Min
Typ
Max
Units
IF = 10 mA
0.27
0.37
V
IF = 100 mA
0.36
0.46
IF = 500 mA
0.52
0.62
VR = 10 V
2.0
10
VR = 30 V
20
200
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise specified)
Maximum Instantaneous
Forward Voltage
VF
Maximum Instantaneous
Reverse Current
IR
IF = 10 mA
0.2
IF = 100 mA
0.3
IF = 500 mA
0.51
VR = 10 V
80
VR = 30 V
525
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise specified)
Maximum Instantaneous
Forward Voltage
Maximum Instantaneous
Reverse Current
VF
IR
IF = 10 mA
0.14
IF = 100 mA
0.27
IF = 500 mA
0.51
VR = 10 V
600
VR = 30 V
3000
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Capacitance
3.
4.
5.
6.
C
VR = 5 V, f = 1.0 MHz
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
Switching characteristics are independent of operating junction temperatures
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3
6.0
pF
NTLUF4189NZ
TYPICAL MOSFET CHARACTERISTICS
4.0 V
6
3.5 V
3.0 V
4
2.5 V
2
0
1
2
3
4
3
2
1
ID = 1.5 A
ID = 0.5 A
2.0
2.5
3.0
4.0
3.5
4.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.35
2.5
3.5
3
2.0 V
2.5 V
3.0 V
4
3.5 V
0.30
4.0 V
0.25
0.20
VGS = 4.5 V
0.15
0.10
TJ = 25°C
0
1
2
3
4
5
6
7
8
9
10
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1000
VGS = 4.5 V
ID = 1.5 A
VGS = 0 V
TJ = 150°C
IDSS, LEAKAGE (nA)
1.4
1.3
1.2
1.1
1.0
0.9
100
TJ = 125°C
10
0.8
0.7
0.6
−50
2
Figure 2. Transfer Characteristics
0.15
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
1.5
Figure 1. On−Region Characteristics
0.20
1.5
1
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.30
1.6
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
0.10
1.5
4
0
0.5
5
0.35
0.25
VDS = 4 V
TJ = 125°C
2.0 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
8
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
5
VGS = 4.5 V
TJ = 25°C
ID, DRAIN CURRENT (A)
10
TJ = 85°C
−25
0
25
50
75
100
125
150
1
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTLUF4189NZ
TYPICAL MOSFET CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
125
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
100
75
50
Coss
25
0
Crss
0
5
10
15
25
20
30
5
4
VGS
3
QGS
10
0
5
VGS = 15 V
ID = 1.5 A
TJ = 25°C
1
0
0.25
0.5
0.75
1
0
1.5
1.25
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VGS = 4.5 V
VDD = 15 V
ID = 1.0 A
IS, SOURCE CURRENT (A)
10
100
td(off)
td(on)
tr
10
1
tf
1
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
100
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
175
1.4
ID = 250 mA
1.3
150
1.2
125
1.1
1.0
0.9
100
75
50
0.8
25
0.7
0.6
−50
1.0
TJ = −55°C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
POWER (W)
t, TIME (ns)
QGD
2
Figure 7. Capacitance Variation
VGS, GATE−TO−SOURCE VOLTAGE (V)
15
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
20
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
150
−25
0
25
50
75
100
125
0
150 0.0000001 0.00001 0.0001 0.001 0.01
0.1
1
10
100 1000
TJ, TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTLUF4189NZ
TYPICAL MOSFET CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
10
10 ms
1
100 ms
VGS = 8 V
0.1 SINGLE PULSE
TC = 25°C
0.01
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
dc
1
100
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
175
150
R(t) (°C/W)
125
100
75
0.5
50
0.2
25 0.1
0.05
0
0.000001
0.02
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 14. FET Thermal Response
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6
1
10
100
1000
NTLUF4189NZ
TYPICAL SCHOTTKY CHARACTERISTICS
C, TOTAL CAPACITANCE (pF)
20
TA = 25°C
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
Figure 15. Total Capacitance
10000
TJ = 125°C
100
TJ = 85°C
10
TJ = 25°C
1
0.1
IR, REVERSE CURRENT (mA)
1000
TJ = −55°C
0
100
200
300
400
500
600
700
TJ = 85°C
100
10
TJ = 25°C
1
0.1
800
TJ = 125°C
1000
0
5
10
15
20
25
VR, REVERSE VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 16. Typical Forward Voltage
Figure 17. Typical Reverse Current
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7
20
NTLUF4189NZ
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AT−01
ISSUE O
A
B
D
2X
0.10 C
PIN ONE
REFERENCE
2X
0.10 C
DETAIL A
E
OPTIONAL
CONSTRUCTION
EXPOSED Cu
TOP VIEW
A
(A3)
DETAIL B
0.05 C
6X
A1
0.05 C
SIDE VIEW
D1
DETAIL A
6X
L
L1
ÉÉ
ÉÉ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
C
A1
SEATING
PLANE
ÉÉÉ
ÈÈÈ
ÈÈÈ
MOLD CMPD
1
A3
DETAIL B
OPTIONAL
CONSTRUCTION
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
3
E1
6X
L
6
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.20
0.30
1.60 BSC
1.60 BSC
0.50 BSC
1.14
1.34
0.38
0.58
0.54
0.74
0.20
−−−
0.15
0.35
−−−
0.10
2X
D2
K
DIM
A
A1
A3
b
D
E
e
D1
D2
E1
K
L
L1
4
6X
1.34
2X
0.58
b
e
0.10 C A B
BOTTOM VIEW
0.05 C
NOTE 3
6X
0.48
0.74 1.90
1
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your local
Sales Representative
NTLUF4189NZ/D