Ordering number : ENN5442A 2SJ456 P-Channel Silicon MOSFET 2SJ456 Ultrahigh-Speed Switching Applications unit : mm 2128 [2SJ456] 8.2 7.8 6.2 3 0.6 1.2 4.2 • Low ON-resistance. High-speed diode incorporated. Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. 1.0 2.54 1 2 0.7 • Package Dimensions 8.4 10.0 • 0.4 0.2 Features 0.3 0.6 1.0 2.54 5.08 1 : Gate 2 : Source 3 : Drain 6.2 5.2 7.8 2.5 10.0 6.0 Specifications SANYO : ZP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --250 Gate-to-Source Voltage VGSS ±30 V --9 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Tc=25°C V --36 A 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ max V(BR)DSS V(BR)GSS IDSS ID=--1mA, VGS=0 IG=±100µA, VDS=0 IGSS VGS(off) yfs VGS=±25V, VDS=0 VDS=--10V, ID=--1mA RDS(on) Ciss ID=--5A, VGS=--10V VDS=--20V, f=1MHz 1950 pF Output Capacitance Coss VDS=--20V, f=1MHz 505 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 230 pF Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance --250 Unit V ±30 V VDS=--250V, VGS=0 VDS=--10V, ID=--5A --2.0 4.8 --1.0 mA ±10 µA --3.0 V 0.55 Ω 8.0 0.4 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-3871 No.5442-1/4 2SJ456 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 28 ns Rise Time tr td(off) See specified Test Circuit. 125 ns See specified Test Circuit. 460 ns tf See specified Test Circuit. 160 IS=--9A, VGS=0 --1.0 IS=--9A, di / dt=100A / µs 180 Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD trr Diode Reverse Recovery Time ns --1.5 V ns Switching Time Test Circuit VDD= --100V VIN 0V --10V ID= --5.0A RL=20.0Ω VIN D VOUT PW=10µs D.C.≤1% G 2SJ456 50Ω S V --6 --14 --4 --2 --4 --2 VGS= --3V 0 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Drain-to-Source Voltage, VDS -- V --10 0.4 25°C --25°C 0.3 --4 --6 --8 --10 --12 Gate-to-Source Voltage, VGS -- V --14 --16 IT05544 --2 --3 --4 --5 --6 IT05543 RDS(on) -- Tc 0.8 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.5 --1 Gate-to-Source Voltage, VGS -- V ID= --5A Tc=75°C 0.2 --2 0 IT05542 RDS(on) -- VGS 0.6 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --6 5°C --6 --8 C --8 --10 Tc= 7 --4V --25 ° --10 --12 25 °C Drain Current, ID -- A 0V -8 --12 --1 Drain Current, ID -- A V --14 ID -- VGS VDS= --10V 75°C --16 Tc=25°C 25°C ID -- VDS --16 Tc= --2 5°C P.G VGS= --10A ID= --5A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 --50 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT05545 No.5442-2/4 2SJ456 yfs -- ID VDS= --10V °C 7 25 5 3 = Tc 2 5°C --2 C 75° 1.0 7 --1.0 7 5 3 2 --0.1 7 5 --0.01 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 0 7 --10 IT05546 SW Time -- ID 1000 --0.6 --0.9 --1.2 --1.5 IT05547 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 5 5 2 Ciss, Coss, Crss -- pF 3 tf 100 tr 7 5 td(on) 3 3 Ciss 2 1000 Coss 7 5 Crs s 3 2 2 VDD= --100V VGS= --10V 10 --0.1 2 3 5 100 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 3 5 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V IT05548 VGS -- Qg --10 7 5 VDS= --100V ID= --9A 2 Drain Current, ID -- A --8 --6 --4 --2 --30 IT05549 ASO IDP= --36A <1µs 10 µs 3 10 0µ ID= --9A --10 7 5 1m DC 3 s s 10 ms op era 2 tio n --1.0 7 5 Operation in this area is limited by RDS(on). 3 2 0 20 0 40 60 80 100 Total Gate Charge, Qg -- nC 120 IT05550 PD -- Tc 60 Allowable Power Dissipation, PD -- W --0.3 Diode Forward Voltage, VSD -- V td(off) 7 Switching Time, SW Time -- ns 3 2 3 2 5 3 --0.1 Gate-to-Source Voltage, VGS -- V --10 7 5 75° C 25° C --25 °C 10 VGS=0 3 2 Tc= 2 IF -- VSD 5 Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 3 Tc=25°C Single pulse --0.1 --1.0 2 3 5 7 --10 2 3 5 7 --100 Drain-to-Source Voltage, VDS -- V 2 3 5 IT05551 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT05552 No.5442-3/4 2SJ456 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.5442-4/4