SCH1334 Ordering number : ENA1656 SANYO Semiconductors DATA SHEET SCH1334 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 Gate-to-Source Voltage VGSS ±10 V V Drain Current (DC) ID --1.6 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C --6.4 A 0.8 W Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions typ max V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS VDS=--12V, VGS=0V VGS=±8V, VDS=0V Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.4 Forward Transfer Admittance | yfs | VDS=--6V, ID=--0.8A 1.2 RDS(on)1 ID=--0.8A, VGS=--4.5V 165 215 mΩ RDS(on)2 ID=--0.4A, VGS=--2.5V 245 345 mΩ RDS(on)3 ID=--0.1A, VGS=--1.8V 370 560 mΩ Marking : YK --12 Unit Zero-Gate Voltage Drain Current Static Drain-to-Source On-State Resistance ID=--1mA, VGS=0V Ratings min V --10 μA ±10 μA --1.3 2.1 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network 41410PE TK IM TC-00002318 No. A1656-1/4 SCH1334 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min typ Unit max 120 pF 46 pF Crss VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz 36 pF Turn-ON Delay Time td(on) See specified Test Circuit. 4.9 ns Rise Time tr td(off) See specified Test Circuit. 17.5 ns ns Turn-OFF Delay Time See specified Test Circuit. 16.0 See specified Test Circuit. 16.5 ns Total Gate Charge tf Qg VDS=--6V, VGS=--4.5V, ID=--1.6A 1.6 nC nC Fall Time Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--1.6A 0.27 Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--1.6A 0.43 Diode Forward Voltage VSD IS=--1.6A, VGS=0V Package Dimensions 0V --4.5V V VDD= --6V VIN 1.6 0.05 --1.2 Switching Time Test Circuit unit : mm (typ) 7028-002 ID= --0.8A RL=7.5Ω VIN 0.2 0.2 6 5 4 D PW=10μs D.C.≤1% 1.5 1.6 nC --0.88 VOUT 0.56 3 0.5 0.25 0.05 G 2 1 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SCH1334 P.G 50Ω S SANYO : SCH6 ID -- VDS .8V --1.6 --1.0 --0.8 --0.6 --1.5V --1.2 --1.0 --0.8 5°C --25 °C --1.2 --1.4 --0.6 Ta= 7 --1.4 Drain Current, ID -- A --8.0 V --0.4 --0.4 --0.2 --0.2 VGS= --1.2V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT15349 0 25 °C Drain Current, ID -- A VDS= --10V --1.8 --1.6 0 ID -- VGS --2.0 --1 --1.8 --3. 5 --4.5 V V --2 .5V --2.0 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT15350 No. A1656-2/4 SCH1334 RDS(on) -- VGS 600 ID= --0.1A --0.4A 500 --0.8A 400 300 200 100 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 200 100 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C VGS=0V 3 3 160 IT15352 IS -- VSD 5 2 = Ta 7 5 -- °C 75 °C 25 3 2 --1.0 7 5 3 2 25°C --25 °C 1.0 °C 25 5°C 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 300 0 --60 --40 --10 VDS= --10V --0.1 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 --0.01 5 0 --0.2 --0.6 --0.8 --1.0 --1.2 IT15354 Ciss, Coss, Crss -- VDS 3 VDD= --6V VGS= --4.5V 2 --0.4 Diode Forward Voltage, VSD -- V IT15353 SW Time -- ID 3 f=1MHz 2 100 7 5 3 td(off) 2 tf 10 7 5 tr Ciss Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --0.1A I = .8V, D 1 -= VGS 4A = --0. 5V, I D . 2 -= VGS = --0.8A 4.5V, I D V GS= -- 400 IT15351 | yfs | -- ID 5 500 Ta= 7 0 RDS(on) -- Ta 600 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 td(on) 100 7 Coss Crss 5 3 2 3 2 1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 3 10 5 --10 7 5 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 3 2 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT15362 --6 --8 --10 --12 IT15356 ASO 100 μs IDP= --6.4A(PW≤10μs) 1m ID= --1.6A DC --1.0 7 5 m op 10 s 0m ati on s (T a= 25 °C ) Operation in this area is limited by RDS(on). --0.1 7 5 s 10 er 3 2 3 2 --0.5 0 --4 2 --3.5 0 --2 Drain-to-Source Voltage, VDS -- V VDS= --6V ID= --1.6V --4.0 0 IT15355 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V 2 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT15357 No. A1656-3/4 SCH1334 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 When mounted on ceramic substrate (900mm2×0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15358 Note on usage : Since the SCH1334 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2010. Specifications and information herein are subject to change without notice. PS No. A1656-4/4