ECH8649 Ordering number : ENA0854 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8649 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±10 V ID 7.5 A Drain Current (DC) Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% 40 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.4 W PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : WT Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A Ratings min typ Unit max 20 V 0.5 4.2 1 µA ±10 µA 1.3 7 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007PE TI IM TC-00000718 No. A0854-1/4 ECH8649 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max RDS(on)1 RDS(on)2 ID=4A, VGS=4.5V ID=4A, VGS=4.0V RDS(on)3 RDS(on)4 ID=4A, VGS=3.1V ID=2A, VGS=2.5V Input Capacitance Ciss VDS=10V, f=1MHz 1060 pF Output Capacitance Coss VDS=10V, f=1MHz 180 pF Reverse Transfer Capacitance Crss pF td(on) VDS=10V, f=1MHz See specified Test Circuit. 135 Turn-ON Delay Time 17.5 ns Rise Time tr td(off) See specified Test Circuit. 120 ns See specified Test Circuit. 68 ns tf See specified Test Circuit. 80 ns Static Drain-to-Source On-State Resistance Turn-OFF Delay Time Fall Time Total Gate Charge 9 13 17 9.4 13.5 18 mΩ 11 16 22 mΩ 18 26 mΩ 12.5 mΩ Qg VDS=10V, VGS=4.5V, ID=7.5A 10.8 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4.5V, ID=7.5A VDS=10V, VGS=4.5V, ID=7.5A 2.1 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=7.5A, VGS=0V Package Dimensions 2.9 0.74 8 7 6 5 1 2 3 4 Top View 0.25 2.9 0.15 5 2.3 0 to 0.02 2.8 V Electrical Connection unit : mm (typ) 7011A-003 8 nC 1.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 4 0.25 1 0.65 0.9 0.3 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=10V VIN 4V 0V ID=4A RL=2.5Ω VIN D VOUT PW=10µs D.C.≤1% G ECH8649 P.G 50Ω S No. A0854-2/4 ECH8649 ID -- VDS 3.0 2.5 VGS=1.5V 2.0 1.5 0 0 0.1 0.2 0.3 0.4 0.5 Drain-to-Source Voltage, VDS -- V 0 30 ID=2A 25 4A 20 15 10 5 0 2 4 6 8 2.5 IT12484 =4A V, I D 1 . 3 = VGS 30 25 =2A V, I D 20 =2.5 VGS 15 I =4A 4.5V, D V GS= 10 =4A V, I D =4.0 VGS 5 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT12485 yfs -- ID 10 2.0 35 0 --60 10 Gate-to-Source Voltage, VGS -- V 1.5 RDS(on) -- Ta 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 5 160 IT12486 IS -- VSD 10 7 5 VDS=10V 140 VGS=0V 3 = Ta 2 C 5° --2 °C 75 1.0 25 7 Source Current, IS -- A 3 °C 5 3 2 1.0 7 5 3 Ta=7 5°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 0 0.5 IT12483 RDS(on) -- VGS 40 Forward Transfer Admittance, yfs -- S 3 1 0.5 0 2 0.1 7 5 3 2 2 0.1 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 5 7 10 IT12487 Drain Current, ID -- A 5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT12488 Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=4V 7 0.1 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 2 Ciss Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 4 2 1.0 7 5 --25°C 3.5 6 25°C 4.0 7 Ta=75 °C 8.0V 4.5 Drain Current, ID -- A 5.0 3.0V 5.5 VDS=10V 9 8 6.0V 6.0 2.0 6.5 Drain Current, ID -- A 2.5V 4.0V 7.0 ID -- VGS 10 V 7.5 3 2 td(off) 100 7 tf 5 tr 1000 7 5 3 Coss Crss 2 3 td(on) 2 100 7 10 0.1 5 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT12489 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT12490 No. A0854-3/4 ECH8649 VGS -- Qg 4.5 4.0 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 VDS=10V ID=7.5A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 10 11 IT12491 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 9 10 7 5 3 2 ASO IDP=40A ID=7.5A 10 DC ms 10 op 0m era s tio n( 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10µs 10 1m 0µs s Ta = 25 Operation in this area is limited by RDS(on). °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT12492 Mounted on a ceramic board (900mm2✕0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 Di ss 1u 0.8 ni t ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12493 Note on usage : Since the ECH8649 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0854-4/4