SCH1331 Ordering number : ENA1530 SANYO Semiconductors DATA SHEET SCH1331 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 Gate-to-Source Voltage VGSS ±10 V V Drain Current (DC) ID --3 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) Channel Temperature Storage Temperature --12 A 1 W Tch 150 °C Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ max --12 Unit V VDS=--12V, VGS=0V VGS=±8V, VDS=0V --10 μA ±10 μA IGSS VGS(off) | yfs | VDS=--6V, ID=--1mA --0.4 VDS=--6V, ID=--1.5A 2.7 RDS(on)1 ID=--1.5A, VGS=--4.5V 64 84 mΩ RDS(on)2 ID=--0.8A, VGS=--2.5V 90 126 mΩ RDS(on)3 ID=--0.3A, VGS=--1.8V 135 230 mΩ Marking : YG --1.3 4.5 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 81909PE TK IM TC-00002017 No. A1530-1/4 SCH1331 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min typ Unit max 405 pF 145 pF Crss VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz 100 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.8 ns Rise Time tr td(off) See specified Test Circuit. 80 ns ns Turn-OFF Delay Time See specified Test Circuit. 41 See specified Test Circuit. 50 ns Total Gate Charge tf Qg VDS=--6V, VGS=--4.5V, ID=--2.5A 5.6 nC nC Fall Time Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--2.5A 0.7 Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--2.5A 1.6 Diode Forward Voltage VSD IS=--2.5A, VGS=0V Package Dimensions 0V --4.5V V VDD= --6V VIN 1.6 0.05 --1.2 Switching Time Test Circuit unit : mm (typ) 7028-002 ID= --1.5A RL=4Ω VIN 0.2 0.2 6 5 4 D PW=10μs D.C.≤1% 1.5 1.6 nC --0.82 VOUT 3 0.5 0.56 2 0.25 0.05 G 1 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SCH1331 P.G 50Ω S SANYO : SCH6 ID -- VGS --4 --1 .8 V VDS= --6V .5V V GS= --1 C --2 --1 25°C --1 --25°C --2 --3 Ta=75 ° Drain Current, ID -- A --4.5 --5.0V --6.0V Drain Current, ID -- A --3.0 V V --2.5 V ID -- VDS --3 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT12598 0 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT12599 No. A1530-2/4 SCH1331 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.8A 200 --1.5A ID= --0.3A 100 50 0 0 --2 --4 --6 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S °C -25 =a °C T 75 °C 25 1.0 7 5 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --0.1 7 5 3 2 --0.2 --0.4 --0.6 7 5 td(off) tf 3 2 tr 10 140 160 IT14898 --0.8 --1.0 --1.2 IT12603 f=1MHz td(on) Ciss 3 2 Coss Crss 100 7 5 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 5 7 VGS -- Qg 3 2 --10 7 5 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 3 2 3 4 Total Gate Charge, Qg -- nC 5 6 IT14899 --4 --6 --8 --10 ASO IDP= --12A --12 IT12605 PW≤10μs 10 0μ s s 1m ID= --3A DC 3 2 10 0m s ati on Operation in this area is limited by RDS(on). --0.1 7 5 ms 10 op er --1.0 7 5 3 2 --0.5 2 --2 Drain-to-Source Voltage, VDS -- V --3.5 1 0 IT12604 VDS= --6V ID= --2.5A 0 120 7 100 --4.0 100 Ciss, Coss, Crss -- VDS 1000 5 --4.5 80 Diode Forward Voltage, VSD -- V 2 3 2 --0.01 60 IS -- VSD 0 VDD= --6V VGS= --4.5V 3 40 --1.0 7 5 3 2 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 20 VGS=0V IT12602 SW Time -- ID 7 5 0 0 --0.01 7 5 3 2 3 0.1 --0.01 Gate-to-Source Voltage, VGS -- V --10 7 5 3 2 5 3 --20 Ambient Temperature, Ta -- °C VDS= --6V 7 50 IT14897 | yfs | -- ID 10 A = --0.8 V, I D .5 2 -V GS= = --1.5A 4.5V, I D -= V GS 100 0 --60 --40 --8 Gate-to-Source Voltage, VGS -- V 3A = --0. 8V, I D . 1 -= VGS 150 5°C 25°C --25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 150 RDS(on) -- Ta 200 Ta=25°C Ta= 7 300 (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT14888 Drain-to-Source Voltage, VDS -- V No. A1530-3/4 SCH1331 PD -- Ta Allowable Power Dissipation, PD -- W 1.2 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14889 Note on usage : Since the SCH1331 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2009. Specifications and information herein are subject to change without notice. PS No. A1530-4/4