MCH6336 Ordering number : ENA0958 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6336 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --12 V ±10 V --5 A ID Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --20 A Allowable Power Dissipation PD When mounted on ceramic substrate (1200mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=--1mA, VGS=0V IGSS VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=--6V, ID=--3A ID=--3A, VGS=--4.5V 33 43 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--1.5A, VGS=--2.5V 47 66 mΩ ID=--0.5A, VGS=--1.8V 68 98 mΩ Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Marking : YK --12 V VDS=--12V, VGS=0V --0.4 4.8 --10 μA ±10 μA --1.4 8.1 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13008PE TI IM TC-00001168 No. A0958-1/4 MCH6336 Continued from preceding page. Parameter Symbol pF pF 155 pF td(on) tr See specified Test Circuit. 7.4 ns See specified Test Circuit. 57 ns td(off) tf See specified Test Circuit. 72 ns Reverse Transfer Capacitance Crss Turn-ON Delay Time Total Gate Charge Unit max 210 Coss Fall Time typ 660 Ciss Output Capacitance Turn-OFF Delay Time min VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz Input Capacitance Rise Time Ratings Conditions Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. 69 ns VDS=--6V, VGS=--4.5V, ID=--5A VDS=--6V, VGS=--4.5V, ID=--5A 6.9 nC 1.2 nC VDS=--6V, VGS=--4.5V, ID=--5A IS=--5A, VGS=0V 1.8 Package Dimensions nC --0.83 --1.2 V Switching Time Test Circuit unit : mm (typ) 7022A-009 VDD= --6V VIN 0.25 2.0 6 5 0.15 0V --4.5V 4 ID= --3A RL=2Ω VIN 2.1 1.6 0 to 0.02 D VOUT PW=10μs D.C.≤1% 0.25 1 2 3 G 0.65 0.3 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 ID -- VDS VDS= --6V --1 .8V --5 --2 --4 --3 °C Drain Current, ID -- A --1.5V --2 --25°C --2.5 V --4.5V --3 S ID -- VGS --6 --3.0 V --4 --8.0V --1 --1 25°C Drain Current, ID -- A --5 50Ω Ta=7 5 0.07 0.85 MCH6336 P.G VGS= --1.0V 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT12987 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT12988 No. A0958-2/4 MCH6336 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 80 ID= --0.5A --1.5A 60 --3.0A 40 20 100 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 40 20 3 Ta 2 25 1.0 7 °C 75 °C 5 --20 0 20 40 60 80 100 120 140 160 IT12990 IS -- VSD --10 7 5 3 2 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 2 --0.001 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 5 7 --10 IT12991 Drain Current, ID -- A --0.4 --0.6 --0.8 --1.0 --1.2 IT12992 Ciss, Coss, Crss -- VDS 3 VDD= --6V VGS= --4.5V 7 5 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 2 3 td(off) 100 7 5 tf 3 2 tr 10 1000 Ciss, Coss, Crss -- pF 2 5 3 Coss Crss 2 td(on) 7 Ciss 7 100 5 7 3 --0.01 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 0 5 3 2 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 6 7 IT12995 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V VDS= --6V ID= --5A --4.0 --2 IT12993 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V --40 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S °C -25 =- 0.1 --0.01 Switching Time, SW Time -- ns 0 --60 --8 10 7 5 A = --1.5 V, I D .5 2 -V GS= .0A I = --3 --4.5V, D = V GS 60 VDS= --6V 2 = --1. VGS IT12989 ⏐yfs⏐ -- ID 3 5A = --0. 8V, I D 80 0 0 RDS(on) -- Ta 120 Ta=25°C Ta= 75° C 25°C --25° C 160 --10 7 5 ASO IDP= --20A ID= --5A DC 3 2 op 10 era PW≤10μs 10 0μ 1m s 10 s ms 0m s n( Ta = tio --1.0 7 5 25 3 2 --0.1 7 5 3 2 --12 IT12994 Operation in this area is limited by RDS(on). °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12996 No. A0958-3/4 MCH6336 PD -- Ta Allowable Power Dissipation, PD -- W 1.6 When mounted on ceramic substrate (1200mm2✕0.8mm) 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12997 Note on usage : Since the MCH6336 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2008. Specifications and information herein are subject to change without notice. PS No. A0958-4/4