SCH2308 Ordering number : ENA1217 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2308 General-Purpose Switching Device Applications Features • • • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Low ON-resistance. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS --30 ±10 V V ID --200 mA mA Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --800 Allowable Power Dissipation PD When mounted on ceramic substrate (900mm 2✕0.8mm) 1unit 0.65 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --30 V VDS=--30V, VGS=0V --1 μA ±10 μA IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--100μA --0.4 Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--100mA 190 ID=--100mA, VGS=--4V 1.8 2.4 Ω Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--50mA, VGS=--2.5V 2.4 3.4 Ω ID=--10mA, VGS=--1.5V 4.5 9.0 Ω Cutoff Voltage Marking : MH --1.4 320 V mS Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52808PE TI IM TC-00001377 No. A1217-1/4 SCH2308 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time min typ Unit max VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz 35 pF 7.2 pF 2.1 pF See specified Test Circuit. 75 ns See specified Test Circuit. 170 ns See specified Test Circuit. 550 ns See specified Test Circuit. 350 ns 0.58 nC 0.17 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--200mA VDS=--10V, VGS=--4V, ID=--200mA VDS=--10V, VGS=--4V, ID=--200mA Diode Forward Voltage VSD IS=--200mA, VGS=0V Package Dimensions Ratings Conditions 0.12 --0.89 nC --1.2 V Electrical Connection unit : mm (typ) 7028-006 6 5 4 1 2 3 1.6 0.2 1.5 1 2 3 0.5 0.25 0.56 0.05 1.6 0.05 0.2 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : SCH6 Switching Time Test Circuit VDD= --15V VIN 0V --4V ID= --100mA RL=150Ω VOUT VIN D PW=10μs D.C.≤1% G P.G Rg SCH2308 50Ω S Rg=5kΩ No. A1217-2/4 SCH2308 --80 V VGS= --1.5 --60 --40 75°C Ta= -25°C --150 --100 Ta= 75° C --25 °C --100 VDS= --10V --200 25 °C --120 --250 Drain Current, ID -- mA --140 --2 --8.0 V Drain Current, ID -- mA --160 .0V --2 .5V --6.0 V --5.0 V --4.0 V --180 ID -- VGS --300 25° C ID -- VDS --200 --50 --20 0 0 --0.1 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 10 --1.0 --0.5 IT11698 --3.0 IT11699 RDS(on) -- Ta 7 9 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C 8 ID= --100mA 7 --50mA 6 --10mA 5 4 3 2 6 , I D= --1.5V V GS= 5 A --10m 4 A --50m V, I D= 3 --2.5 V GS= 00mA I = --1 --4.0V, D V GS= 2 1 1 0 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 3 -25 =a T °C C 5° 7 100 7 °C 25 5 3 20 40 60 80 100 120 140 160 IT11701 IS -- VSD VGS=0V 3 2 --100 7 5 3 2 --10 7 5 3 2 2 10 --1.0 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Drain Current, ID -- mA 5 7--1000 IT11702 0 --0.2 --0.4 Ciss, Coss, Crss -- pF tf 3 2 tr --1.2 --1.4 IT11703 f=1MHz 5 5 --1.0 7 Ciss 1000 td (off) --0.8 Ciss, Coss, Crss -- VDS 100 VDS= --15V VGS= --4V 7 --0.6 Diode Forward Voltage, VSD -- V SW Time -- ID 2 Switching Time, SW Time -- ns 0 --1000 7 5 5 2 --20 Ambient Temperature, Ta -- °C Source Current, IS -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS VDS= --10V 7 --40 IT11700 ⏐yfs⏐ -- ID 1000 0 --60 --8 --25 °C --3 25°C --2 5°C --1 Ta= 7 0 3 2 10 Coss 7 5 3 100 td(on) Crss 2 7 5 --10 1.0 2 3 5 7 --100 2 Drain Current, ID -- mA 3 5 7 IT11704 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT11705 No. A1217-3/4 SCH2308 VGS -- Qg --3.5 --1.0 7 5 --3.0 --2.5 --2.0 --1.5 3 2 IDP= --800mA PW≤10μs 1m 10 ID= --200mA DC --0.1 7 5 s ms 10 0m op s era tio Ta = Operation in this area is limited by RDS(on). 3 2 n( 25 °C ) --0.01 7 5 --1.0 3 2 --0.5 0 0 0.1 0.2 0.3 0.4 0.5 Total Gate Charge, Qg -- nC 0.6 0.7 IT11706 PD -- Ta 0.7 Allowable Power Dissipation, PD -- W ASO 2 VDS= --10V ID= --200mA Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.0 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --0.001 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT13696 When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.65 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13697 Note on usage : Since the SCH2308 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A1217-4/4