Ordering number : ENN6549 3LN02N N-Channel Silicon MOSFET 3LN02N Ultrahigh-Speed Switching Applications Features • • Low ON resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2178 [3LN02N] 5.0 4.0 4.0 5.0 • Package Dimensions 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 Specifications 1.3 2 3 1 : Source 2 : Drain 3 : Gate 1.3 SANYO : NP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) Allowable Power Dissipation ID IDP PD 0.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10µs, duty cycle≤1% 0.3 A 1.2 A Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs Conditions Ratings min typ ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 30 VDS=10V, ID=100µA VDS=10V, ID=150mA 0.4 0.4 Marking : YD max Unit V 10 µA ±10 µA 1.3 0.56 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71000 TS IM TA-2952 No.6549-1/4 3LN02N Continued from preceding page. Parameter Symbol Static Drain-to-Sourse on-State Resistance RDS(on)1 RDS(on)2 Input Capacitance RDS(on)3 Ciss Ratings Conditions min typ Unit max ID=150mA, VGS=4V ID=80mA, VGS=2.5V ID=10mA, VGS=1.5V 0.9 1.2 Ω 1.2 1.7 Ω 2.6 5.2 VDS=10V, f=1MHz 30 pF Ω Output Capacitance Coss pF Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 15 Reverse Transfer Capacitance 10 pF Turn-ON Delay Time td(on) See specified Test Circuit 32 ns Rise Time tr td(off) See specified Test Circuit 110 ns See specified Test Circuit 250 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit 160 ns VDS=10V, VGS=10V, ID=300mA 2.34 nC 0.38 nC Gate-to-Source Charge Qgs Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA Diode Forward Voltage VSD IS=300mA, VGS=0 0.45 nC 0.8 1.2 V Switching Time Test Circuit 4V 0V VDD=15V VIN ID=150mA RL=100Ω VIN PW=10µs D.C.≤1% D VOUT G 3LN02N 50Ω S ID -- VDS 0.15 0.10 VGS=1.5V 0.05 0.4 0.3 0.2 0.1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 0 1.5 ID=150mA 80mA 1.0 0.5 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT00226 2.0 2.5 IT00225 VGS=4V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.0 1.5 RDS(on) -- ID 10 2.5 1 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 0 0.5 IT00224 RDS(on) -- VGS 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 75° C C Drain Current, ID -- A 2.0 V 0.20 Ta= --25 ° 2.5 0.5 6.0V Drain Current, ID -- A VDS=10V V 3.5V 4.0V 0.25 ID -- VGS 0.6 3.0V °C 0.30 25 P.G 5 3 2 Ta=75°C 1.0 7 --25°C 5 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00227 No.6549-2/4 3LN02N RDS(on) -- ID 10 5 3 2 Ta=75°C 1.0 --25°C 7 25°C 5 3 2 0.1 0.01 2 3 5 7 2 0.1 3 5 7 Drain Current, ID -- A 0.5 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 7 3 --25° C Ta=7 5 °C 2 7 25°C 3 2 0.2 0.4 0.6 0.8 1.0 3 2 1.0 °C 7 --25 Ta= 5 3 2 3 5 10 Crss 7 5 3 2 7 2 0.1 3 5 7 1.0 IT00231 SW Time -- ID VDD=15V VGS=4V 5 3 td(off) 2 tf tr 100 7 5 td(on) 3 2 2 3 5 7 0.1 2 3 Drain Current, ID -- A Gate-to-Sourse Voltage, VGS -- V Coss C C 5 IT00233 VGS -- Qg VDS=10V ID=300mA 9 2 75° 25° 2 f=1MHz Ciss 5 IT00229 5 10 3 3 VDS=10V 10 0.01 Ciss, Coss, Crss -- VDS 5 2 0.01 7 IT00232 7 7 7 1.4 1.2 Diode Forward Voltage, VSD -- V 100 5 yfs -- ID 1000 0.01 0 3 Drain Current, ID -- A Switching Time, SW Time -- ns 5 5 2 IT00230 VGS=0 0.1 25°C 0.1 0.01 160 IF -- VSD 1.0 --25°C 2 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω V =2.5 A, VGS m 0 4.0V I D=8 V S= 0mA, G 5 1 = ID 0 --60 Ta=75°C 3 10 2.0 1.0 5 IT00228 2.5 1.5 7 1.0 0.001 1.0 RDS(on) -- Ta 3.0 Forward Drain Current, IF -- A VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 Ciss, Coss, Crss -- pF RDS(on) -- ID 10 VGS=2.5V 8 7 6 5 4 3 2 1 1.0 0 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT00234 0 0.5 1.0 1.5 Total Gate Charge, Qg -- nC 2.0 2.5 IT00235 No.6549-3/4 3LN02N PD -- Ta Allowable Power Dissipation, PD -- W 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01988 Note on usage : Since the 3LN02N is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.6549-4/4