FTD2017R Ordering number : ENA0472 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FTD2017R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V 6 A Drain Current (DC) ID Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% 40 A Mounted on a ceramic board (1000mm2✕0.8mm)1unit 1.2 W PT Tch Mounted on a ceramic board (1000mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.25 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : D2017R Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS(off) yfs VGS= ±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A RDS(on)1 RDS(on)2 ID=6A, VGS=4.5V ID=6A, VGS=4V RDS(on)3 RDS(on)4 ID=3A, VGS=3.1V ID=3A, VGS=2.5V Ratings min typ Unit max 20 V ±10 µA µA 1.3 V 1 0.5 6.9 11.5 11 17 23 mΩ S 12 18 24 mΩ 14 19 30 mΩ 14.4 20 33 mΩ Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1506PA TI IM TC-00000296 No. A0472-1/4 FTD2017R Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 960 ns Rise Time tr td(off) See specified Test Circuit. 2700 ns See specified Test Circuit. 5500 ns tf See specified Test Circuit. 5400 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg nC Qgs VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A 10 Gate-to-Source Charge 1 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=6A 4 Diode Forward Voltage VSD IS=6A, VGS=0V Package Dimensions 8 3.0 7 6 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain 1 4 1.0 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain 0.05 6.4 4.5 0.5 5 SANYO : TSSOP8 0.25 0.95 V 5 0.125 8 nC 1.2 Electrical Connection unit : mm (typ) 7006A-005 0.95 0.83 0.425 0.65 Top view 1 2 3 4 Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=5A RL=2Ω VIN D VOUT PW=10µs D.C.≤1% G P.G Rg FTD2017R 50Ω S Rg=2.4kΩ No. A0472-2/4 FTD2017R ID -- VDS 8 6 5 4 3 25°C 2 7 --25°C Drain Current, ID -- A 3 9 3.1 4 VDS=6V V 1.5 S= G V V 10V 7 .5 V 4 .5 V Drain Current, ID -- A 5 ID -- VGS 10 Ta=75 °C 4 .0 2.5V V 6 2 1 1 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 Drain-to-Source Voltage, VDS -- V 0 40 ID=6A 30 3A 25 20 15 10 5 2 4 6 8 10 Gate-to-Source Voltage, VGS -- V 2 12 1V 3A I D= 25 yfs -- ID , 3A I D= 15 , VG 6A I D= V 4.0 S= VG 6A, I D= 10 5 0 --50 50 100 150 200 IT11788 IS -- VSD 10 VGS=0V 5 °C 25 3 C 5° --2 = °C Tc 75 2 1.0 7 5 3 2 3 2 1.0 7 5 3 2 0.1 2 3 2 5 7 0.1 3 5 7 1.0 2 3 5 7 10 IT11789 Drain Current, ID -- A 0 Gate-to-Source Voltage, VGS -- V 7 tf 3 2 tr td(on) 1000 0.6 0.8 1.0 1.2 IT11790 VGS -- Qg VDS=10V ID=6A 9 5 0.4 10 td(off) 10000 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 2 Switching Time, SW Time -- ns =2. VGS 7 10 7 5 8 7 6 5 4 3 2 1 7 5 0.1 5V 4. S= 5V 20 Case Temperature, Tc -- °C VDS=10V 0.1 7 0.01 2.5 IT11786 3. S= , VG 30 IT11787 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 2.0 35 0 --100 0 0 1.5 RDS(on) -- Tc 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 35 0.5 IT11785 RDS(on) -- VGS 50 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.40 Tc=75 °C 25°C --25°C 0 0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT11323 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT11791 No. A0472-3/4 FTD2017R ASO ≤10µs IDP=40A 10 7 5 3 2 10 ms 0m s DC op era tio Operation in this area is limited by RDS(on). 0.1 7 5 3 2 10 0 1m µs s 10 ID=6A 1.0 7 5 3 2 n Ta=25°C Single pulse Mounted on a ceramic board (1000mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation(FET1), PD -- W PD -- Ta 1.4 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 100 7 5 3 2 Mounted on a ceramic board (1000mm2✕0.8mm) 1.25 1.2 1.0 0.8 To t 0.6 1u al ni t di ss ip ati on 0.4 0.2 0 2 3 IT11852 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT11853 PD(FET1) -- PD(FET2) 1.4 1.2 M ou nte 1.0 do na ce ram 0.8 ic bo ard 0.6 (1 00 0m m2 ✕0 0.4 .8m m) 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Allowable Power Dissipation(FET2), PD -- W 1.4 IT11854 Note on usage : Since the FTD2017R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0472-4/4