VEC2408 Ordering number : ENA0567 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET VEC2408 General-Purpose Switching Device Applications Features • • • • • The best suited for load switching applications. Low ON-resistance. Composite type facilitating high-density mounting. 1.8V drive. Mounting high 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V ID 3.5 A Drain Current (DC) Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% 14 A Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.9 W PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=20V, VGS=0V VGS(off) yfs VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance Marking : CK Conditions Ratings min typ Unit max 20 V 0.4 1 µA ±10 µA 1.3 V 60 mΩ 2.4 4 ID=2A, VGS=4V ID=1A, VGS=2.5V 37 47 42 61 85 mΩ ID=0.5A, VGS=1.8V ID=0.1A, VGS=1.4V 47 79 118 mΩ 167 540 mΩ 72 S 400 Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 92 pF pF Crss VDS=10V, f=1MHz 85 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2206PE TI IM TB-00002396 No. A0567-1/4 VEC2408 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 11 Rise Time tr td(off) See specified Test Circuit. 58 ns See specified Test Circuit. 58 ns tf Qg See specified Test Circuit. 58 ns VDS=10V, VGS=4V, ID=3.5A 6 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=3.5A VDS=10V, VGS=4V, ID=3.5A 0.8 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3.5A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions 0.25 0.85 8 0.3 7 7 6 1 3 V 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.15 6 5 2 nC 1.2 5 2.3 0.25 2.8 2.2 Electrical Connection unit : mm (typ) 7012-002 8 ns 4 0.65 1 0.75 2.9 2 3 4 Top view 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 Switching Time Test Circuit VDD=10V VIN 4V 0V ID=1.5A RL=6.67Ω VIN D VOUT PW=10µs D.C.≤1% G VEC2408 P.G 50Ω S No. A0567-2/4 VEC2408 ID -- VDS VDS=10V 3.0 1.0 0.5 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 1.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 400 2.0A 300 1.0A 0.5A 200 100 ID=0.1A 4 6 8 10 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A 3 °C °C 75 °C 25 2 1.0 0.1 2 3 5 7 .5A I D=0 =4.0V A, V GS I D=2.0 50 --50 0 1.0 2 3 5 0.2 0.4 0.6 5 3 tr 2 td(on) 10 7 1.2 IT11855 f=1MHz 7 Ciss, Coss, Crss -- pF tf 1.0 Ciss, Coss, Crss -- VDS 1000 5 td(off) 0.8 Diode Forward Voltage, VSD -- V 3 100 7 200 IT11808 0.1 7 5 3 2 0 VDD=10V VGS=4V 2 150 1.0 7 5 3 2 7 SW Time -- ID 5 100 VGS=0V IT11809 7 50 IS -- VSD 0.01 7 5 3 2 0.001 Drain Current, ID -- A 1000 =1.8V =2.5V , VGS , VGS A 0 . 1 I D= 100 10 7 5 3 2 7 -25 =a T 150 Ambient Temperature, Ta -- °C VDS=10V 5 2.5 IT11806 ID=0.1A, VGS=1.4V IT11807 yfs -- ID 10 2.0 200 0 --100 0 2 1.5 RDS(on) -- Ta 250 Ta=25°C 0 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 600 0.5 IT11805 °C 25°C --25° C 0.1 Ta= 75 0 Forward Transfer Admittance, yfs -- S 1.0 0.5 0 Switching Time, SW Time -- ns 1.5 --25°C 1.5 2.0 Ta=7 5°C VGS=1.4V 2.5 25° C 2.0 Drain Current, ID -- A 6.0V 8.0V 2.5 10.0V Drain Current, ID -- A 3.0 ID -- VGS 3.5 4.0V 2.5V 1 .8 V 3.5 Ciss 3 2 100 Coss 7 Crss 5 5 3 0.01 3 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT07054 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT07055 No. A0567-3/4 VEC2408 VGS -- Qg VDS=10V ID=3.5A 3.5 10 7 5 3.0 2.5 2.0 1.5 1.0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 7 IT11811 100µs ID=3.5A 10 1m m 10 DC 1.0 7 5 ≤10µs s s 0m s op er 3 2 ati on Operation in this area is limited by RDS(on). 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT11812 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 6 IDP=14A 3 2 3 2 0.5 0 ASO 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.0 Mounted on a ceramic board (900mm2✕0.8mm) 1.0 0.9 0.8 To t al Di ss 0.6 1u ni ip ati on t 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11813 Note on usage : Since the VEC2408 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0567-4/4