SANYO VEC2408

VEC2408
Ordering number : ENA0567
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
VEC2408
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
The best suited for load switching applications.
Low ON-resistance.
Composite type facilitating high-density mounting.
1.8V drive.
Mounting high 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±12
V
ID
3.5
A
Drain Current (DC)
Drain Current (Pulse)
V
IDP
PD
PW≤10µs, duty cycle≤1%
14
A
Mounted on a ceramic board (900mm2✕0.8mm)1unit
0.9
W
PT
Tch
Mounted on a ceramic board (900mm2✕0.8mm)
Channel Temperature
Storage Temperature
Tstg
Allowable Power Dissipation
Total Dissipation
1.0
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS(off)
yfs
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Marking : CK
Conditions
Ratings
min
typ
Unit
max
20
V
0.4
1
µA
±10
µA
1.3
V
60
mΩ
2.4
4
ID=2A, VGS=4V
ID=1A, VGS=2.5V
37
47
42
61
85
mΩ
ID=0.5A, VGS=1.8V
ID=0.1A, VGS=1.4V
47
79
118
mΩ
167
540
mΩ
72
S
400
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
92
pF
pF
Crss
VDS=10V, f=1MHz
85
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2206PE TI IM TB-00002396 No. A0567-1/4
VEC2408
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11
Rise Time
tr
td(off)
See specified Test Circuit.
58
ns
See specified Test Circuit.
58
ns
tf
Qg
See specified Test Circuit.
58
ns
VDS=10V, VGS=4V, ID=3.5A
6
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4V, ID=3.5A
VDS=10V, VGS=4V, ID=3.5A
0.8
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=3.5A, VGS=0V
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Package Dimensions
0.25
0.85
8
0.3
7
7
6
1
3
V
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.15
6 5
2
nC
1.2
5
2.3
0.25
2.8
2.2
Electrical Connection
unit : mm (typ)
7012-002
8
ns
4
0.65
1
0.75
2.9
2
3
4
Top view
0.07
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
Switching Time Test Circuit
VDD=10V
VIN
4V
0V
ID=1.5A
RL=6.67Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
G
VEC2408
P.G
50Ω
S
No. A0567-2/4
VEC2408
ID -- VDS
VDS=10V
3.0
1.0
0.5
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
1.0
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
500
400
2.0A
300
1.0A
0.5A
200
100
ID=0.1A
4
6
8
10
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A
3
°C
°C
75
°C
25
2
1.0
0.1
2
3
5
7
.5A
I D=0
=4.0V
A, V GS
I D=2.0
50
--50
0
1.0
2
3
5
0.2
0.4
0.6
5
3
tr
2
td(on)
10
7
1.2
IT11855
f=1MHz
7
Ciss, Coss, Crss -- pF
tf
1.0
Ciss, Coss, Crss -- VDS
1000
5
td(off)
0.8
Diode Forward Voltage, VSD -- V
3
100
7
200
IT11808
0.1
7
5
3
2
0
VDD=10V
VGS=4V
2
150
1.0
7
5
3
2
7
SW Time -- ID
5
100
VGS=0V
IT11809
7
50
IS -- VSD
0.01
7
5
3
2
0.001
Drain Current, ID -- A
1000
=1.8V
=2.5V
, VGS
, VGS
A
0
.
1
I D=
100
10
7
5
3
2
7
-25
=a
T
150
Ambient Temperature, Ta -- °C
VDS=10V
5
2.5
IT11806
ID=0.1A, VGS=1.4V
IT11807
yfs -- ID
10
2.0
200
0
--100
0
2
1.5
RDS(on) -- Ta
250
Ta=25°C
0
1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
600
0.5
IT11805
°C
25°C
--25°
C
0.1
Ta=
75
0
Forward Transfer Admittance, yfs -- S
1.0
0.5
0
Switching Time, SW Time -- ns
1.5
--25°C
1.5
2.0
Ta=7
5°C
VGS=1.4V
2.5
25°
C
2.0
Drain Current, ID -- A
6.0V
8.0V
2.5
10.0V
Drain Current, ID -- A
3.0
ID -- VGS
3.5
4.0V
2.5V
1 .8
V
3.5
Ciss
3
2
100
Coss
7
Crss
5
5
3
0.01
3
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7 10
IT07054
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT07055
No. A0567-3/4
VEC2408
VGS -- Qg
VDS=10V
ID=3.5A
3.5
10
7
5
3.0
2.5
2.0
1.5
1.0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
7
IT11811
100µs
ID=3.5A
10
1m
m
10
DC
1.0
7
5
≤10µs
s
s
0m
s
op
er
3
2
ati
on
Operation in this
area is limited by RDS(on).
0.1
7
5
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
IT11812
PD -- Ta
1.2
Allowable Power Dissipation, PD -- W
6
IDP=14A
3
2
3
2
0.5
0
ASO
3
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4.0
Mounted on a ceramic board (900mm2✕0.8mm)
1.0
0.9
0.8
To
t
al
Di
ss
0.6
1u
ni
ip
ati
on
t
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11813
Note on usage : Since the VEC2408 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0567-4/4